AC Electroluminescence of Ho-Implanted ZnS Thin Films

Lijian Meng,Changhua Li,Guozhu Zhong
DOI: https://doi.org/10.1007/978-3-642-93430-8_33
1989-01-01
Abstract:Rare earth ions are considered to be advantageous in the production of a wide variety of emission colors. To develop multi-color displays, ZnS:RE electroluminescence thin film (ELTF) devices have been designed [1], In order to get uniform doping and avoid the effect of fluorine ions we fabricate ZnS:Ho thin films by means of ion-implantation. This paper will discuss the effect of the annealing temperature on ACEL characteristics of these devices.
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