MEMS Based on Thin Ferroelectric Layers

Igor L.,Edward G.

DOI: https://doi.org/10.5772/17539

2011-08-23

Abstract:MEMS Based on Thin Ferroelectric Layers | InTechOpen, Published on: 2011-08-23. Authors: Igor L. Baginsky and Edward G. Kostsov

What problem does this paper attempt to address?

Ferroelectric Thin Films in Micro-electromechanical Systems Applications

D.L. Polla,L.F. Francis

DOI: https://doi.org/10.1557/s0883769400035934

IF: 5

1996-07-01

MRS Bulletin

Abstract:Ferroelectric ceramic thin films fit naturally into the burgeoning field of microelectromechanical systems (MEMS). Microelectromechanical systems combine traditional Si integrated-circuit (IC) electronics with micromechanical sensing and actuating components. The term MEMS has become synonymous with many types of microfabricated devices such as accelerometers, infrared detectors, flow meters, pumps, motors, and mechanical components. These devices have lateral dimensions in the range of 10 μm–10 mm. The ultimate goal of MEMS is a self-contained system of interrelated sensing and actuating devices together with signal processing and control electronics on a common substrate, most often Si. Since fabrication involves methods common to the IC industry, MEMS can be mass-produced. Commercial applications for MEMS already span biomedical (e.g., blood-pressure sensors), manufacturing (e.g., microflow controllers), information processing (e.g., displays), and automotive (e.g., accelerometers) industries. More applications are projected in consumer electronics, manufacturing control, communications, and aerospace. Materials for MEMS include traditional microelectronic materials (e.g., Si, SiO 2 , Si 3 N 4 , polyimide, Pt, Al) as well as nontraditional ones (e.g., ferroelectric ceramics, shapememory alloys, chemical-sensing materials). The superior piezoelectric and pyroelectric properties of ferroelectric ceramics make them ideal materials for microactuators and microsensors.

materials science, multidisciplinary,physics, applied
Microelectromechanical systems based on ferroelectric thin films

Dennis L. Polla

DOI: https://doi.org/10.1016/0167-9317(95)00114-x

IF: 2.3

1995-12-01

Microelectronic Engineering

Abstract:Ferroelectric thin films have been integrated in silicon-based microelectromechanical systems, commonly called MEMS. Several thin films of the PZT family have been used in the formation of both microsensors and microactuators in processes compatible with 2-μm analog CMOS technology. Ferroelectric MEMS offer significant advantages of high signal-to-noise, low power dissipation, and high force generation in comparison to other MEMS technologies such as those based on piezoresistive sensing and electrostatic actuation. While several concept feasibility demonstrations have been made to date in several areas, this paper will focus on the use of integrated, pyroelectric lead titanate thin films for infrared detection and integrated, piezoelectric lead zirconate titanate thin films for actuator applications.

engineering, electrical & electronic,nanoscience & nanotechnology,optics,physics, applied
Electromechanical properties of ferroelectric films for MEMS

Andrei Kholkin

DOI: https://doi.org/10.1080/00150190108008674

2001-01-01

Ferroelectrics

Abstract:The possibility of miniaturization and integration with Si technology makes ferroelectric films promising for microelectromechanical systems (MEMS). Electromechanical properties of thin-layer ferroelectrics, which determine their performance in micro devices, are still poorly understood as compared to the properties of bulk materials. Small grain size, preferred orientation of the films and their strong clamping to the rigid substrate are the main factors, which are responsible for the large difference in electromechanical responses of thin-film and bulk piezoelectrics. This paper reviews author's recent investigations on electromechanical properties of ferroelectric films. The emphasis is given to the contribution of domain wall motion to piezoelectric properties, which is shown to be strongly suppressed in thin films as compared to bulk materials. Nevertheless, this contribution is found to be essential at sufficiently high ac electric field in PZT films of the morphotropic phase boundary and rhombohedral compositions. Large anisotropy of the piezoelectric properties is found in PZT films having different textures. This anisotropy is similar to that recently observed in relaxor single crystals and is explained based on the anisotropy of electrostriction coefficients. Electrostrictive properties of bulk and thin film ferroelectrics are compared and analyzed.

materials science, multidisciplinary,physics, condensed matter
Development in Application of Ferroelectric Thin Films

徐文彬,王德苗,董树荣

DOI: https://doi.org/10.3321/j.issn:1005-023X.2004.10.021

2004-01-01

Abstract:This paper briefly reviews the typical application of ferroelectric thin films in the domains of ferroelectric memory, MEMS, microwave devices and optical devices. Besides, it briefly discusses the research and development of the ferroelectric thin films in China.
&Lt;title>ferroelectric Pb(Zr<formula><inf><roman>0.53</roman></inf></formula>, Ti<formula><inf><roman>0.47</roman></inf></formula>)O<formula><inf><roman>3</roman></inf></formula> Thin Films for Smart MEMS</title>

Ryutaro Maeda,Zhan Jie Wang,Jiaru Chu,Wen-Mei Lin

DOI: https://doi.org/10.1117/12.420846

2001-01-01

Abstract:Ferroelectric thin film is the target of the interest in micro electromechanical system, memory etc. Smart MEMS is to be developed with such smart materials thin films. In spite of the success in commercialization of FRAM application, MEMS application is still under R&D state. Despite to their promising properties, there are only few reports on the use of such layers as MEMS devices. Problems for application are mainly caused by the necessary very small dimension of such devices, in contrast to limitations and tolerances of the used micro-technologies. Although deposition of piezoelectric PZTlayer using different thin-film technologies has reached an advanced state, the layers of more than 1 micron thickness needed for MEMS applications is still difficult to deposit. To deal with these problems, the structure or the function of the devices has to be coped with such technologically caused constraints, like thickness deviation and deformation by residual stress, as well as optimization of materials processing parameters. As an application of the thin films, Piezoelectric SFM and scanning mirror device are designed and fabricated as examples of the target MEMS devices with special emphases placed on materials, processing and device structure optimization. Sol gel deposited as well as Pulsed Laser Ablation Deposited PZT layers have been developed and applied for the devices. To compensate the deformation of the devices, bimorph PZT actuator is also presented. A piezoelectric SPM is expected to provide a promising answer to High density data storage devices, as the piezoelectric layer serves as a actuator for the cantilever as well as a force sensor. This paper describes a novel probe arrays integrated with micro-heaters for the AFM thermal mechanical data storage. The probes have cantilevers 3um thick, 100-200um long, and 30-70um wide, and have micro-heater integrated on the triangle end of the cantilever. The cantilever consists of a piezoelectric layer on a silicon base for the heater actuation and force sensing. The Lead-Titanate-Zirconate (PZT) is selected as the piezoelectric material for its high piezoelectric coefficients comparing to crystal materials (for example, ZnO2). We design the heater on the triangle end of the cantilever, and shape the apex part as the narrowest to get the biggest power dissipation. The prototype of the device has been fabricated and characterized.
Thin-Film Ferroelectrics

Abel Fernandez,Megha Acharya,Han-Gyeol Lee,Jesse Schimpf,Yizhe Jiang,Djamila Lou,Zishen Tian,Lane W Martin

DOI: https://doi.org/10.1002/adma.202108841

Abstract:Over the last 30 years, the study of ferroelectric oxides has been revolutionized by the implementation of epitaxial-thin-film-based studies, which have driven many advances in the understanding of ferroelectric physics and the realization of novel polar structures and functionalities. New questions have motivated the development of advanced synthesis, characterization, and simulations of epitaxial thin films and, in turn, have provided new insights and applications across the micro-, meso-, and macroscopic length scales. This review traces the evolution of ferroelectric thin-film research through the early days developing understanding of the roles of size and strain on ferroelectrics to the present day, where such understanding is used to create complex hierarchical domain structures, novel polar topologies, and controlled chemical and defect profiles. The extension of epitaxial techniques, coupled with advances in high-throughput simulations, now stands to accelerate the discovery and study of new ferroelectric materials. Coming hand-in-hand with these new materials is new understanding and control of ferroelectric functionalities. Today, researchers are actively working to apply these lessons in a number of applications, including novel memory and logic architectures, as well as a host of energy conversion devices.
A Novel Fabrication Process of MEMS Devices on Polyimide Flexible Substrates

S. Y. Xiao,L. F. Che,X. X. Li,Y. L. Wang

DOI: https://doi.org/10.1016/j.mee.2007.08.004

IF: 2.3

2007-01-01

Microelectronic Engineering

Abstract:Micro-electro-mechanic-system (MEMS) devices on flexible substrate are important for non-planar and non-rigid surface applications. In this paper, a novel and cost-effective fabrication process for an 8×8 MEMS temperature sensor array with a lateral dimension of 2.5mm×5.5mm on a polyimide flexible substrate is developed. A 40μm thick polyimide substrate is formed on a rigid silicon wafer using as a mechanical carrier throughout the fabrication by four successive spin coating liquid polyimide. The arrayed temperature sensing elements made of 1200Å sputtered platinum thin film on polyimide substrate show excellent linearity with a temperature coefficient of resistance of 0.0028/°C. The purposed sensor obtains a high sensitivity of 0.781Ω/°C at 8mA at constant drive current. Because of the low heat capacity and excellent thermal isolation, the temperature sensing element shows excellent high sensitivity and a fast thermal response. The finished devices are flexible enough to be folded and twisted achieving any desired shape and form. Employing spin-coated liquid polyimide substrate instead of solid polyimide sheet minimizes the thermal cycling as well as improves the production yield. This fabrication technique first introduces the spin-coated PDMS (Polydimethylsiloxane) interlayer between the silicon carrier and the polyimide substrate and makes the polyimide-based devices separate much easier and greatly simplifies the fabrication process with a high production yield. A non-successive two-stage cure procedure for the polyimide precursor is developed to meet low-temperature requirement of the PDMS interlayer. The fabrication procedure developed in this research is compatible with conventional MEMS technology through an optimized integration process. The novel flexible MEMS technology can benefit the development of other new flexible polyimide-based devices.
Flexible Ferroelectric Devices: Status and Applications

Xiaotong Jia,Rui Guo,Beng Kang Tay,Xiaobing Yan

DOI: https://doi.org/10.1002/adfm.202205933

IF: 19

2022-09-03

Advanced Functional Materials

Abstract:Herein, the prevailing methods for preparing flexible ferroelectric films are reviewed and summarized. The research progress of flexible ferroelectric devices applied to memories, sensors, photovoltaic devices, energy harvesters, and neuromorphic computing is also be discussed in detail. Finally, the challenges and prospects of flexible ferroelectric devices in future advanced electronics are proposed. Flexible electronic devices have been extensively studied for their advantages of distinguished portability, conformal contact characteristics, and human‐friendly interfaces compared with conventional bulk Si technology. Flexible electronics can be attached to various surfaces like skin and internal organs for human–machine interaction, which has made significant advances in electronics, medicine, neuromorphic computing, etc. Owing to the innovation and maturation of the thin film preparation process, which have promoted the successful preparation of high‐quality flexible ferroelectric films. Herein, the preparation of flexible ferroelectric devices and the progress of their applications in recent years are reviewed. Prevailing methods for preparing flexible ferroelectric films including the van der Waals heteroepitaxy on flexible substrate, delamination of the ferroelectric films on rigid substrate by chemical etching techniques, and direct use of novel 2D ferroelectric materials etc. are summarized. The research progress of flexible ferroelectric devices applied to memories, sensors, photovoltaic devices, and energy harvesters are also be discussed in detail. Moreover, the potential applications of flexible ferroelectric devices in the field of neuromorphic computing are studied, a new trend which contributes to the further development of brain‐like chip systems. Finally, the challenges and prospects of flexible ferroelectric devices in the future advanced electronics are briefly proposed.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Junctionless Ferroelectric Field Effect Transistors Based on Ultrathin Silicon Nanomembranes

Ronggen Cao,Gaoshan Huang,Zengfeng Di,Guodong Zhu,Yongfeng Mei

DOI: https://doi.org/10.1186/1556-276x-9-695

2014-01-01

Nanoscale Research Letters

Abstract:The paper reported the fabrication and operation of nonvolatile ferroelectric field effect transistors (FeFETs) with a top gate and top contact structure. Ultrathin Si nanomembranes without source and drain doping were used as the semiconducting layers whose electrical performance was modulated by the polarization of the ferroelectric poly (vinylidene fluoride trifluoroethylene) [P(VDF-TrFE)] thin layer. FeFET devices exhibit both typical output property and obvious bistable operation. The hysteretic transfer characteristic was attributed to the electrical polarization of the ferroelectric layer which could be switched by a high enough gate voltage. FeFET devices demonstrated good memory performance and were expected to be used in both low power integrated circuit and flexible electronics.
Ferroelectric thin films: Review of materials, properties, and applications

N. Setter,D. Damjanovic,L. Eng,G. Fox,S. Gevorgian,S. Hong,A. Kingon,H. Kohlstedt,N. Y. Park,G. B. Stephenson,I. Stolitchnov,A. K. Taganstev,D. V. Taylor,T. Yamada,S. Streiffer

DOI: https://doi.org/10.1063/1.2336999

IF: 2.877

2006-09-01

Journal of Applied Physics

Abstract:An overview of the state of art in ferroelectric thin films is presented. First, we review applications: microsystems’ applications, applications in high frequency electronics, and memories based on ferroelectric materials. The second section deals with materials, structure (domains, in particular), and size effects. Properties of thin films that are important for applications are then addressed: polarization reversal and properties related to the reliability of ferroelectric memories, piezoelectric nonlinearity of ferroelectric films which is relevant to microsystems’ applications, and permittivity and loss in ferroelectric films—important in all applications and essential in high frequency devices. In the context of properties we also discuss nanoscale probing of ferroelectrics. Finally, we comment on two important emerging topics: multiferroic materials and ferroelectric one-dimensional nanostructures.

physics, applied
Epitaxy of Ferroelectric P(VDF-TrFE) Films via Removable PTFE Templates and Its Application in Semiconducting/Ferroelectric Blend Resistive Memory.

Wei Xia,Christian Peter,Junhui Weng,Jian Zhang,Herbert Kliem,Yulong Jiang,Guodong Zhu

DOI: https://doi.org/10.1021/acsami.7b01571

IF: 9.5

2017-01-01

ACS Applied Materials & Interfaces

Abstract:Ferroelectric polymer based devices exhibit great potentials in low-cost and flexible electronics. To meet the requirements of both low voltage operation and low energy consumption, thickness of ferroelectric polymer films is usually required to be less than, for example, 100 nm. However, decrease of film thickness is also accompanied by the degradation of both crystallinity and ferroelectricity and also the increase of current leakage, which surely degrades device performance. Here we report one epitaxy method based on removable poly(tetrafluoroethylene) (PTFE) templates for high-quality fabrication of ordered ferroelectric polymer thin films. Experimental results indicate that such epitaxially grown ferroelectric polymer films exhibit well improved crystallinity, reduced current leakage and good resistance to electrical breakdown, implying their applications in high-performance and low voltage operated ferroelectric devices. On the basis of this removable PTFE template method, we fabricated organic semiconducting/ferroelectric blend resistive films which presented record electrical performance with operation voltage as low as 5 V and ON/OFF ratio up to 10.
Nonvolatile ferroelectric control of ferromagnetism in (Ga,Mn)As

I. Stolichnov,S.W.E. Riester,H.J. Trodahl,N. Setter,A.W. Rushforth,K.W. Edmonds,R.P. Campion,C.T. Foxon,B.L. Gallagher,T. Jungwirth

DOI: https://doi.org/10.1038/nmat2185

2008-02-15

Abstract:There is currently much interest in materials and structures that provide coupled ferroelectric and ferromagnetic responses, with a long-term goal of developing new memories and spintronic logic elements. Within the field there is a focus on composites coupled by magnetostrictive and piezoelectric strain transmitted across ferromagnetic-ferroelectric interfaces, but substrate clamping limits the response in the supported multilayer configuration favoured for devices. This constraint is avoided in a ferroelectric-ferromagnetic bilayer in which the magnetic response is modulated by the electric field of the poled ferroelectric. Here, we report the realization of such a device using a diluted magnetic semiconductor (DMS) channel and a polymer ferroelectric gate. Polarization reversal of the gate by a single voltage pulse results in a persistent modulation of the Curie temperature as large as 5%. The device demonstrates direct and quantitatively understood electric-fieldmediated coupling in a multiferroic bilayer and may provide new routes to nanostructured DMS materials and devices via ferroelectric domain nanopatterning. The successful implementation of a polymer-ferroelectric gate fieldeffect transistor (FeFET) with a DMS channel adds a new functionality to semiconductor spintronics and may be of importance for future low-voltage spintronics devices and memory structures.

Materials Science
Ferroelectric and Ferroelastic Domain Related Formation and Influential Mechanisms of Vapor Deposited Piezoelectric Thin Films

Chu Chen,Jian Song,Qi Zhang,Mingyu Gong,Yue Liu,Tongxiang Fan

DOI: https://doi.org/10.3390/coatings11121437

IF: 3.236

2021-11-24

Coatings

Abstract:Compared to the bulk piezoelectric materials counterpart, piezoelectric thin films (PTFs) possess advantages of smaller size, lower power consumption, better sensitivity, and have broad application in advanced micro-electro-mechanical system (MEMS) devices. However, the performance of MEMS transducers and actuators are largely limited by PTFs piezoelectric properties. In this review, we focus on understanding structure-property relationship of vapor deposited PTFs, with emphasis on the effect of strain energy and electrostatic energy in thin films, especially, energy relaxation induced misfit dislocation and ferroelectric (FS) and ferroelastic (FC) domain formation mechanisms. We then discuss the microstructure of these domains and their influential mechanisms on piezoelectric properties, as well as the domain engineering strategies (i.e., internal and external stimuli). This review will motivate further experimental, theoretical, and simulation studies on FS and FC domain engineering in PTFs.

materials science, multidisciplinary,physics, applied, coatings & films
Magnetoelectric Coupling by Giant Piezoelectric Tensor Design

J. Irwin,S. Lindemann,W. Maeng,J. J. Wang,V. Vaithyanathan,J. M. Hu,L. Q. Chen,D. G. Schlom,C. B. Eom,M. S. Rzchowski

DOI: https://doi.org/10.48550/arXiv.1901.02456

2019-01-08

Applied Physics

Abstract:Strain-coupled magnetoelectric (ME) phenomena in piezoelectric / ferromagnetic thin-film bilayers are a promising paradigm for sensors and information storage devices, where strain is utilized to manipulate the magnetization of the ferromagnetic film. In-plane magnetization rotation with an electric field across the film thickness has been challenging due to the virtual elimination of in-plane piezoelectric strain by substrate clamping, and to the requirement of anisotropic in-plane strain in two-terminal devices. We have overcome both of these limitations by fabricating lithographically patterned devices with a piezoelectric membrane on a soft substrate platform, in which in-plane strain is freely generated, and a patterned edge constraint that transforms the nominally isotropic piezoelectric strain into the required uniaxial strain. We fabricated 500 nm thick, (001) oriented [Pb(Mg$_{1/3}$Nb$_{2/3}$)O$_3$]$_{0.7}$-[PbTiO$_3$]$_{0.3}$ (PMN-PT) unclamped piezoelectric membranes with ferromagnetic Ni overlayers. Guided by analytical and numerical continuum elastic calculations, we designed and fabricated two-terminal devices exhibiting Ni magnetization rotation in response to an electric field across the PMN-PT. Similar membrane heterostructures could be used to apply designed strain patterns to many other materials systems to control properties such as superconductivity, band topology, conductivity, and optical response.
Ferroelectricity Survives in the Sub-Nanometer Scale

Yiqian Liu,Yuan-Hua Lin

DOI: https://doi.org/10.1007/s40843-023-2465-y

2023-01-01

Science China Materials

Abstract:Ultrathin materials with maintained functionalities are the prerequisites for the device miniaturization and integration.Ferroelectric materials are key ingredients in nonvolatile mem-ories as information storage media and in field-effect transistors as gate dielectrics[1],and therefore their thickness scaling enables the high-capacity and energy-efficient electronics.
Dynamics of Ferroelectric Negative Capacitance -- Electrostatic MEMS Hybrid Actuators

Raghuram TR,Arvind Ajoy

DOI: https://doi.org/10.1109/TED.2020.3019991

2019-07-23

Abstract:We propose a framework to model ferroelectric negative capacitance: electrostatic Micro Electro Mechanical Systems (MEMS) hybrid actuators and analyze their dynamic (step input) response. Using this framework, we report the first proposal for reduction in the dynamic pull-in and pull-out voltages of the hybrid actuators due to the negative capacitance of the ferroelectric. The proposed model also reveals the effect of ferroelectric thickness on the dynamic pull-in and pull-out voltages and the effect of ferroelectric damping on the energy dissipated during actuation. We infer from our analysis that the hybrid actuators are better than the standalone MEMS actuators in terms of operating voltage and energy dissipation. Further, we show that one can trade-off a small part of the reduction in actuation voltage to achieve identical pull-in times in the hybrid and standalone MEMS actuators, while still consuming substantially lower energy in the former as compared to the latter. The circuit compatibility of the proposed hybrid actuator model makes it suitable for analysis and evaluation of various heterogeneous systems consisting of hybrid MEMS actuators and other electronic devices.

Applied Physics
Fabrication And Characterization Of All-Thin-Film Magnetoelectric Sensors

Peng Zhao,Zhenli Zhao,Dwight Hunter,Richard Suchoski,Chen Gao,Scott A. Mathews,Manfred Wüttig,Ichiro Takeuchi

DOI: https://doi.org/10.1063/1.3157281

IF: 4

2009-01-01

Applied Physics Letters

Abstract:ac magnetic field sensors based on thin-film magnetoelectric (ME) devices operating at room temperature have been fabricated. The ME layers consist of a sol-gel derived Pb(Zr0.52Ti0.48)O-3 film and a sputter deposited Fe0.7Ga0.3 film on Si cantilevers. The ME coupling is substantially improved by depositing a Pt layer at the interface. The ME coefficient up to 1.81 V/Oe cm is obtained at the mechanical resonant frequency of 333 Hz and at dc bias magnetic field of 90 Oe. Clear reduction in the substrate clamping effect is observed as the Si cantilever thickness is systematically reduced down to 35 mu m.
Ferroelectric Thin Film Diaphragm Resonators for Bio-Detection

Shaokang Li,Wei Ren,Xu Lu,Zhuo Xu,Zhongyang Cheng,Xiaofeng Chen,Peng Shi,Xiaoqing Wu,Xi Yao

DOI: https://doi.org/10.1080/00150193.2010.492743

2010-01-01

Ferroelectrics

Abstract:In this paper, we have investigated a piezoelectric resonator biosensor based on ferroelectric thin film diaphragm. The diaphragm structure utilizing a flexural vibration mode has been adopted to replace the microcantilever structure in a biosensor. It is an acoustic wave device which can be immobilized with a bio-molecular recognition layer on its surface. Like a microcantilever sensor, the resonance frequency of the diaphragm sensor shifts when the bio-molecular recognition layer reacts with the target species. But a diaphragm sensor has more robust structure comparing with a microcantilever sensor. The responses of the diaphragm biosensor have been simulated using a commercial FEM software package, ANSYS. The prototype devices were fabricated by a conventional method and a MEMS process, respectively. The performance of the sensor was tested and reported.
Enhanced ferroelectricity in ultrathin films grown directly on silicon

Suraj S. Cheema,Daewoong Kwon,Nirmaan Shanker,Roberto dos Reis,Shang-Lin Hsu,Jun Xiao,Haigang Zhang,Ryan Wagner,Adhiraj Datar,Margaret R. McCarter,Claudy R. Serrao,Ajay K. Yadav,Golnaz Karbasian,Cheng-Hsiang Hsu,Ava J. Tan,Li-Chen Wang,Vishal Thakare,Xiang Zhang,Apurva Mehta,Evguenia Karapetrova,Rajesh V Chopdekar,Padraic Shafer,Elke Arenholz,Chenming Hu,Roger Proksch,Ramamoorthy Ramesh,Jim Ciston,Sayeef Salahuddin

DOI: https://doi.org/10.1038/s41586-020-2208-x

IF: 64.8

2020-04-22

Nature

Abstract:Ultrathin ferroelectric materials could potentially enable low-power perovskite ferroelectric tetragonality logic and nonvolatile memories<a href="/articles/s41586-020-2208-x#ref-CR1">1</a>,<a href="/articles/s41586-020-2208-x#ref-CR2">2</a>. As ferroelectric materials are made thinner, however, the ferroelectricity is usually suppressed. Size effects in ferroelectrics have been thoroughly investigated in perovskite oxides—the archetypal ferroelectric system<a href="/articles/s41586-020-2208-x#ref-CR3">3</a>. Perovskites, however, have so far proved unsuitable for thickness scaling and integration with modern semiconductor processes<a href="/articles/s41586-020-2208-x#ref-CR4">4</a>. Here we report ferroelectricity in ultrathin doped hafnium oxide (HfO2), a fluorite-structure oxide grown by atomic layer deposition on silicon. We demonstrate the persistence of inversion symmetry breaking and spontaneous, switchable polarization down to a thickness of one nanometre. Our results indicate not only the absence of a ferroelectric critical thickness but also enhanced polar distortions as film thickness is reduced, unlike in perovskite ferroelectrics. This approach to enhancing ferroelectricity in ultrathin layers could provide a route towards polarization-driven memories and ferroelectric-based advanced transistors. This work shifts the search for the fundamental limits of ferroelectricity to simpler transition-metal oxide systems—that is, from perovskite-derived complex oxides to fluorite-structure binary oxides—in which 'reverse' size effects counterintuitively stabilize polar symmetry in the ultrathin regime.

multidisciplinary sciences
Piezoelectric and ferroelectric films for microelectronic applications

Tian-Ling Ren,Hong-Jin Zhao,Li-Tian Liu,Zhi-Jian Li

DOI: https://doi.org/10.1016/S0921-5107(02)00466-X

2003-01-01

Abstract:Piezoelectric and ferroelectric films are very promising materials for microelectronic applications. In this paper, some important issues for these materials and applications are reviewed, and recent progresses on integrated ferroelectrics have been given. The physical and chemical preparation methods of the silicon-based piezoelectric and ferroelectric films, such as Sol–Gel, sputtering, metal organic chemical vapor deposition, have been described and compared. To realize a microelectronic device, the integrated circuits compatible ferroelectric/piezoelectric etching method is very important. The wet-chemical etching methods and dry-etching methods, such as reactive ion etching, have been introduced. There are many important applications for the silicon-based piezoelectric and ferroelectric films. One is the micro-sensors or micro-actuators or micro-electro-mechanical-system. Another is the memory devices. Some typical devices using piezoelectric and ferroelectric films have been introduced.

MEMS Based on Thin Ferroelectric Layers

Ferroelectric Thin Films in Micro-electromechanical Systems Applications

Microelectromechanical systems based on ferroelectric thin films

Electromechanical properties of ferroelectric films for MEMS

Development in Application of Ferroelectric Thin Films

Thin-Film Ferroelectrics

A Novel Fabrication Process of MEMS Devices on Polyimide Flexible Substrates

Flexible Ferroelectric Devices: Status and Applications

Junctionless Ferroelectric Field Effect Transistors Based on Ultrathin Silicon Nanomembranes

Ferroelectric thin films: Review of materials, properties, and applications

Epitaxy of Ferroelectric P(VDF-TrFE) Films via Removable PTFE Templates and Its Application in Semiconducting/Ferroelectric Blend Resistive Memory.

Nonvolatile ferroelectric control of ferromagnetism in (Ga,Mn)As

Ferroelectric and Ferroelastic Domain Related Formation and Influential Mechanisms of Vapor Deposited Piezoelectric Thin Films

Magnetoelectric Coupling by Giant Piezoelectric Tensor Design

Ferroelectricity Survives in the Sub-Nanometer Scale

Dynamics of Ferroelectric Negative Capacitance -- Electrostatic MEMS Hybrid Actuators

Fabrication And Characterization Of All-Thin-Film Magnetoelectric Sensors

Ferroelectric Thin Film Diaphragm Resonators for Bio-Detection

Enhanced ferroelectricity in ultrathin films grown directly on silicon

Piezoelectric and ferroelectric films for microelectronic applications