Abstract:The authors report on the fabrication and application of a ferroelectric transistor integrated with a van der Waals ferroelectrics heterostructure (CuInP2S6/α‐In2Se3). Leveraging enhanced polarization originating from the dipole coupling, the fabricated device exhibits a large memory window and nonvolatile memory characteristics with long retention time and stable cyclic endurance, providing a promising pathway for exploring low‐dimensional ferroelectronics. To address the demands of emerging data‐centric computing applications, ferroelectric field‐effect transistors (Fe‐FETs) are considered the forefront of semiconductor electronics owing to their energy and area efficiency and merged logic–memory functionalities. Herein, the fabrication and application of an Fe‐FET, which is integrated with a van der Waals ferroelectrics heterostructure (CuInP2S6/α‐In2Se3), is reported. Leveraging enhanced polarization originating from the dipole coupling of CIPS and α‐In2Se3, the fabricated Fe‐FET exhibits a large memory window of 14.5 V at VGS = ±10 V, reaching a memory window to sweep range of ≈72%. Piezoelectric force microscopy measurements confirm the enhanced polarization‐induced wider hysteresis loop of the double‐stacked ferroelectrics compared to single ferroelectric layers. The Landau–Khalatnikov theory is extended to analyze the ferroelectric characteristics of a ferroelectric heterostructure, providing detailed explanations of the hysteresis behaviors and enhanced memory window formation. The fabricated Fe‐FET shows nonvolatile memory characteristics, with a high on/off current ratio of over 106, long retention time (>104 s), and stable cyclic endurance (>104 cycles). Furthermore, the applicability of the ferroelectrics heterostructure is investigated for artificial synapses and for hardware neural networks through training and inference simulation. These results provide a promising pathway for exploring low‐dimensional ferroelectronics.

Ferroelectricity Survives in the Sub-Nanometer Scale

Nonvolatile Ferroelectric Field-Effect Transistors.

Nonvolatile Ferroelectric Memory Effect in Ultrathin Α‐in2se3

Direct observation of room-temperature out-of-plane ferroelectricity and tunneling electroresistance at the two-dimensional limit

Enhanced ferroelectricity in ultrathin films grown directly on silicon

Ferroelectrics: Nonvolatile Ferroelectric Memory Effect in Ultrathin α‐In <sub>2</sub> Se <sub>3</sub> (Adv. Funct. Mater. 20/2019)

Ferroelectric Devices for Intelligent Computing

Sliding ferroelectric memories and synapses

Two-Dimensional Ferroelectric Materials: Synthesis, Characterization and Applications

Harnessing ferroic ordering in thin film devices for analog memory and neuromorphic computing applications down to deep cryogenic temperatures

Ferroelectric Field‐Effect‐Transistor Integrated with Ferroelectrics Heterostructure

Non-volatile Ferroelectric Memory Effect in Ultrathin Α-In2se3

High-performance ferroelectric field-effect transistors with ultra-thin indium tin oxide channels for flexible and transparent electronics

The Rise of Ferroelectricity at Nanoscale: Nanoelectronics is rediscovering the ferroelectricity

Ferroelectricity Based Memory Devices: New-Generation of Materials and Applications

Prominent Size Effects Without a Depolarization Field Observed in Ultrathin Ferroelectric Oxide Membranes

Ferroelectricity in ultrathin film capacitors

Emergent ferroelectricity in subnanometer binary oxide films on silicon

2D Ferroelectric Metal–Organic Frameworks for Ultralow Power Field Effect Transistors

Nonvolatile Memory and Computing Using Emerging Ferroelectric Transistors.

Room-temperature Ferroelectricity and a Switchable Diode Effect in Two-Dimensional Α-In2se3 Thin Layers.