Abstract:With a large band gap and a single Dirac cone responsible for the topological surface states, Bi2Se3 is widely regarded as a prototypical 3D topological insulator. Further applications of the bulk material has, however, been hindered by inherent structural defects that donate electrons and make the bulk conductive. Consequently, controlling these defects is of great interest for future technological applications, and while past literature has focused on adding external doping elements to the mixture, a complete study on undoped Bi2Se3 was still lacking. In this work, we use the self-flux method to obtain high-quality Bi2Se3 single-crystals in the entire concentration range available on the phase-diagram for the technique. By combining basic structural characterization with measurements of the resistivity, Hall effect and Shubnikov-de Haas (SdH) quantum oscillations, the effects of these impurities on the bulk transport are investigated in samples with electron densities ranging from 10^17 cm^-3 to 10^19 cm^-3, from Se-rich to Bi-rich mixtures, respectively, evidencing the transition into a degenerate semiconductor regime. We find that electron-donor impurities, likely Se vacancies, unavoidably shift the Fermi level up to 200 meV inside the conduction band. Other impurities, like interstitial Bi and Se, are shown to play a significant role as scattering centres, specially at low temperatures and in the decoherence of the SdH oscillations. Previous open questions on Bi2Se3, such as the upturn in resistivity below 30 K, the different scattering times in transport and quantum oscillations, and the presence of additional low mobility bands, are addressed. The results outlined here provide a concise picture on the bulk conducting states in flux-grown Bi2Se3 single crystals, enabling better control of the structural defects and electronic properties.

Preparation and Transport Properties of Bi2O2Se Single Crystals

Synthesis and Electrical Transport Properties of Bi2O2Se Single Crystals

Growth and Characterization of Bi2Se3 Crystals by Chemical Vapor Transport

Thermoelectric Properties of Bi2O2Se Single Crystals

Phase-coherent transport in catalyst-free vapor phase deposited Bi$_2$Se$_3$ crystals

Growth optimization and crossover of transport mechanisms in Bi2Se3 thin films

Preparation and investigation of structure, optical, nonlinear optical and thermoelectric properties of Bi2Se3 thin film

Huge permittivity and premature metallicity in Bi$_2$O$_2$Se single crystals

The First Principle Study: Electronic and Optical Properties in Bi2Se3

Electron-electron Scattering Dominated Electrical and Magnetotransport Properties in the Quasi-Two-dimensional Fermi Liquid Single-Crystal Bi2O2Se

Structural and Electrical Characterization of Bi2Se3 Nanostructures Grown by Metalorganic Chemical Vapor Deposition

Band Structure Engineering of Bi<sub>4</sub>O<sub>4</sub>SeCl<sub>2</sub> for Thermoelectric Applications

Crystal growth and thermoelectric properties of Sn-doped Bi2Se3

Effects of Sb-doping on the Electron-Phonon Transport Properties of Bi2O2Se

Electrical Scattering Mechanism Evolution in Un-Doped and Halogen-Doped Bi2O2Se Single Crystals.

Electrical, Thermal and Spectroscopic Characterization of Bulk Bi2Se3 Topological Insulator

Thickness- and strain-tunable electronic structures of two-dimensional Bi2O2Se

Growth of SnSe Single Crystal Via Vertical Vapor Deposition Method and Characterization of Its Thermoelectric Performance

Transport Property Measurements in Doped Bi2Te3 Single Crystals Obtained via Zone Melting Method

Growth and characterization of WSe2 single crystals using TeCl4 as transport agent

Bulk conducting states of intrinsically doped Bi$_2$Se$_3$