Subarray-SHORT De-Embedding for Improving Accuracy of On-Wafer Measurements of Devices for Millimeter and Submillimeter-Wave Applications

Behnam Pouya,Suren Singh,K. O Kenneth,Kenneth K. O

DOI: https://doi.org/10.1109/tmtt.2021.3124214

IF: 4.3

2022-02-01

IEEE Transactions on Microwave Theory and Techniques

Abstract:A de-embedding technique for high-$Q$ or high-cutoff frequency ($f_{\mathrm {T}}$ ) one-port structures such as metal–oxide– semiconductor (MOS) varactors and Schottky diodes for millimeter- and submillimeter-wave applications is proposed to mitigate the limitation of vector network analyses of structures with a large ratio between the $\vert $ reactance$\vert $ and resistance ($\vert X\vert /R)$ . A subarray with a fewer number of cells of the device under test that has a lower $\vert X\vert /R$ is used instead of an ultrahigh-$Q$ OPEN structure for de-embedding. This technique provides more accurate measurements of cutoff frequency ($f_{\mathrm {T}}$ ). The resulting average of %-variations of measured $f_{\mathrm {T}}$ and series resistance over the measurement frequency range (50–55 GHz) are decreased by 30%–45%. More importantly, the %-variation range of $f_{\mathrm {T}}$ for the proposed method over samples and frequencies is less than ~20% which is ~50% smaller than the de-embedding using a conventional ultrahigh-$Q$ OPEN structure.

engineering, electrical & electronic