Improving Resonance Characteristics of Gas Sensors by Chemical Etching of Quartz Plates

Z Raicheva,V Georgieva,A Grechnikov,V Gadjanova,Ts Angelov,L Vergov,Y Lazarov
DOI: https://doi.org/10.1088/1742-6596/398/1/012046
2012-12-10
Journal of Physics: Conference Series
Abstract:The paper presents the results of the influence of the etching process of AT-cut quartz plates on the resonance parameters and the QCM sensors. Quartz wafers (100 μm thick, with a diameter of 8 mm), divided into five groups, have been etched in [NH4]2 F2: H2O = 1:1 solution at temperatures in the range from 70°C to 90°C. The influence of etching temperature on the surface morphology of quartz wafers has been estimated by Atomic Force Microscopy (AFM). A correlation between the etching temperature and the dynamic characteristics is obtained. The optimal etching conditions for removing the surface damages caused by the mechanical treatment of the quartz wafers and for obtaining a clean surface were determined. The typical parameters of fabricated resonators on the quartz plates etched in the temperature range from 70°C to 90°C are as follows: Frequency, Fs 16 MHz ± 100 kHz Motional resistance, Rs less 10 Ω Motional inductance, Lq higher than 3 mH Motional capacitance, Cq less 30 fF Static capacitance, Co around 5 pF Quality factor, Q from 46 000 to 70 000 Sorption properties of QCM – MoO3 are evaluated at NH3 concentrations in the interval from 100 ppm to 500 ppm.
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