Abstract:The etch profile control for the amorphous carbon layer (ACL) is an important step in the 3D NAND fabrication process. Because ACL is the mask material for defining the pattern of the high-aspect-ratio-contact (HARC) dielectric ONON layer etch process, precise control of its etch profile is necessary. Specifically, an ideal ACL mask profile should be free of symptoms such as hole circularity distortion, profile twisting, bowing, and undercutting. In order to achieve this desired etch performance, knowledge of various etch contributing factors must be systematically derived and applied, including etch surface chemistry, high-aspect-ratio (HAR) etchant transport, ion flux and ion energy angle distribution function (EADF) control, etc. In this work, we investigate the ACL etch fundamental characteristics through combined 2D chamber-scale plasma simulations with the hybrid plasma-equipment model (HPEM) and 3D etch profile simulations with the Monte-Carlo Feature Profile Model (MCFPM) for an inductively-coupled-plasma (ICP) reactor with RF bias at the substrate. In particular, we focus on the profile trends under different reactant fluxes and energies. Our findings indicate that maintaining a neutral-starved (ion-rich) etch regime is essential for mitigating both the channel hole etch circularity distortion and the slit etch profile twisting. To achieve this desired etch regime, the HAR ion, and neutral transport must controlled by the RF bias power and frequency, substrate temperature, etc. Furthermore, especially in this neutral-limited etch regime which is necessary for distortion and twisting mitigation, the control of the consequent aspect-ratio dependent etching (ARDE), as well as maintaining the critical dimension (CD) and reducing bowing and undercutting are also necessary. For this purpose, atomistic density functional theory (DFT) calculations have been applied to compare the reaction energetics for various ALD-like sidewall passivation chemistries. Specifically, we propose a new process based on its favorable reaction energetics. Experimental cross-section images have matched simulation results. In conclusion, our insights have provided guidance for process optimization and tool design to meet industrial demands.

Study on the etching characteristics of amorphous carbon layer in oxygen plasma with carbonyl sulfide

Etch Properties of Amorphous Carbon Material Using RF Pulsing in the O2/N2/CHF3 Plasma.

Role of Oxygen in Amorphous Carbon Hard Mask Plasma Etching

Investigation of SiO2 Etch Characteristics by C6F6/Ar/O2 Plasmas Generated Using Inductively Coupled Plasma and Capacitively Coupled Plasma

Subatmospheric chemical vapor deposition ozone/TEOS process for SiO2 trench filling

A comparative study of Cx(x = 4, 5, 7)F8 plasmas for dry etch processing

Ion-Enhanced Etching Characteristics of sp2-Rich Hydrogenated Amorphous Carbons in CF4 Plasmas and O2 Plasmas

High aspect ratio SiO2/SiN (ON) stacked layer etching using C3HF5, C4H2F6, and C4H4F6

Etching characteristics of hydrogenated amorphous carbon with different sp 2 /sp 3 hybridization ratios in CF 4 /O 2 plasmas

High-aspect-ratio amorphous carbon mask etch profile control through plasma and surface chemistry optimization

Oxidation differences on Si- versus C-terminated surfaces of SiC during planarization in the fabrication of high-power, high-frequency semiconductor device

Etching of high aspect ratio features in Si using SF6∕O2∕HBr and SF6∕O2∕Cl2 plasma

Enhanced Oxygen-Induced Properties of Bulk Oxygenated Amorphous Carbon Films Deposited with an Anode Layer Ion Source

Study of Etch Stop Layer on Characteristics of Amorphous Aluminum Oxide Thin Film

High Aspect Ratio Etching of Nanopores in PECVD SiC Through AAO Mask

Mechanism of Molten KOH Etching of SiC Single Crystals: Comparative Study with Thermal Oxidation

Step Coverage and Dry Etching Process Improvement of Amorphous Carbon Hard Mask

Data-Driven Analysis of High-Temperature Fluorocarbon Plasma for Semiconductor Processing

High Aspect Ratio Carbon Hard Mask Etch Process for Profile and LCDU Control

Effect of Discharge Gas Composition on SiC Etching in an HFE-347mmy/O2/Ar Plasma

Micro-trench free 4H-SiC etching with improved SiC/SiO2 selectivity using inductively coupled SF6/O2/Ar plasma