Computer simulation of temperature fields in the Cr (film)-Zr (substrate) system during pulsed electron-beam irradiation

A B Markov,A V Solovyov,E V Yakovlev,E A Pesterev,V I Petrov,M S Slobodyan
DOI: https://doi.org/10.1088/1742-6596/2064/1/012058
2021-11-01
Journal of Physics: Conference Series
Abstract:Abstract The paper presents the results of numerical simulation of the distribution of thermal fields during the formation of Cr-Zr surface alloy using a pulsed low-energy high-current electron beam (LEHCEB). The melting thresholds of the Cr-Zr system for different thicknesses of Cr films were calculated. The melting threshold of the Cr-Zr system increases linearly with increasing Cr film thickness. A linear regression dependency model of the melting threshold on the film thickness is proposed. Evaporation thresholds of the Cr-Zr system for different thicknesses of Cr films were calculated. The evaporation threshold of the Cr-Zr system increases linearly with increasing Cr film thickness. A linear regression dependency model of the evaporation threshold on the film thickness is proposed. The value of the LEHCEB energy density at which the lifetime of the film and substrate are equal is calculated. This value is a maximum value for the effective formation of Cr-Zr. A model of the LEHCEB energy density, at which the lifetime of the film and the substrate are equal, in the form of a third-degree polynomial is proposed.
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