Atomic-Level Interaction of an Edge Dislocation with Localized Obstacles in Fcc and Bcc Metals

Yu. N. Osetsky,D. J. Bacon
DOI: https://doi.org/10.1007/978-1-4020-2111-4_19
2004-01-01
Abstract:Interaction between a moving dislocation and localized obstacles determines microstructure-induced hardening. The mechanisms and parameters of such interactions are necessary inputs to large scale dislocation dynamics modelling. We have developed a model to investigate these characteristics at the atomic level for dislocation-obstacle interactions under both static (T=OK) and dynamic (T>OK) conditions. We present results on hardening due to pinning of edge dislocations at obstacles such as voids, coherent precipitates and stacking fault tetrahedra in bcc-iron and fcc-copper at temperatures from 0 to 600K. It is demonstrated that atornic-scale simulation is required to determine the effects of stress, strain rate and temperature and that such effects cannot always be rationalized within continuum theory.
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