A facile method to control grain sizes of barium strontium titanate films on TiN/Si in the hydrothermal–galvanic couple synthesis

Pei-Hsuan Chan,Hsun-Shu Chan,Fu-Hsing Lu
DOI: https://doi.org/10.1016/j.ceramint.2017.05.311
IF: 5.532
2017-08-01
Ceramics International
Abstract:Barium strontium titanate (BST) thin films, exhibiting many dielectric applications, were synthesized over TiN seeding layers by varying simply the total concentration of solutions in the hydrothermal-galvanic synthesis. The BST films with different grain sizes were achieved by this facile control. The reaction concentrations were 2M NaOH mixed with a fixed ratio of Ba(CH3COO)2 and Sr(CH3COO)2 in total concentrations of 0.01–1M. X-ray diffraction patterns show that cubic BST possessed the same preferred orientation as the TiN seeding layer, indicating a directionally oriented growth. Field-emission scanning electron microscopy reveals spherical-particulate microstructures of the BST films with a single layer. Morphologies and grain sizes of BST films could be tailored by varying the total concentrations. As the total concentration of the solution was above a critical concentration, relative intensity, averaged grain size, and thickness of the BST increased rapidly first and then decreased gradually. This is mainly due to that grain growth was more prominent at lower total concentrations, leading to lager grain sizes and thicknesses of the BST films. On the other hand, nucleation predominates at higher concentrations, yielding smaller grain sizes and thicknesses of the films. Satisfactory dielectric results of the films were obtained by the synthesizing technique. The dielectric tunability could reach about 90% for BST in a total concentration of 0.035M. The facile control of grain sizes for the BST films may bring in more promising technological applications.
materials science, ceramics
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