Abstract:Electromigration studies on Cu interconnects are reviewed. Some history and more recent results are discussed along with a description of the present interpretations of the active mass transport mechanisms involved in Cu electromigration. The issue of the dual-damascene process and its potential effect on EM reliability is described with special focus on the peculiarities of the dual-damascene interconnect architecture compared to more conventional subtractively etched Al-based interconnects. Experiments performed on dual-damascene interconnects that highlight electromigration reliability issues such as early failure, a tentative explanation for via electromigration failure, and the Blech effect, are summarized. Emphasis is placed on an experimental methodology that uses large interconnect ensembles in a multi-link configuration. Such a large scale study of nearly 10000 interconnects has shown statistical evidence of bimodal failure behavior consistent with the presence of a weak and strong failure mode, which have been identified as voiding, respectively, within the via and the trench at the cathode end of an interconnect. A multi-link approach has also demonstrated a length-dependent distribution of failures that yields a (j/spl middot/L)/sub c/ product value of about 9000 A/cm in dual-damascene Cu/oxide interconnections and is consistent with mass transport that is controlled by the presence of extended defects within Cu such as grain boundaries, interfaces, and/or surfaces. The study of dual-damascene Cu has demonstrated the importance of statistics in analyzing EM reliability.

Temperature-dependent activation energy of electromigration in Cu/porous low-k interconnects

Comparison of the Time-Dependent Physical Processes in the Electromigration of Deep Submicron Copper and Aluminum Interconnects

Transient Electrothermal Analysis of Multilevel Interconnects in the Presence of ESD Pulses Using the Nonlinear Time-Domain Finite-Element Method

Electromigration in Cu–Cu joints: Measurement of activation energy and polarity effect

Electro-Thermo-Mechanical Investigation On Multi-Level Interconnects In The Presence Of An Esd Pulse

Reservoir Effect and the Role of Low Current Density Regions on Electromigration Lifetimes in Copper Interconnects

Reliability Studies of Barrier Layers for Cu/PAE Low-K Interconnects.

Electromigration Behavior of Cu Metallization Interfacing with Ta Versus TaN at High Temperatures

Understanding the Impact of Surface Engineering, Structure, and Design on Electromigration Through Monte Carlo Simulation and In‐Situ SEM Studies

Experimental and Numerical Studies of Stress Migration in Cu Interconnects Embedded in Different Dielectrics

Effect of Bonding Strength on Electromigration Failure in Cu–Cu Bumps

The electromigration failure mechanism for TSV process

Electromigration behavior of 60 nm dual damascene Cu interconnects

Atomic-Scale Investigation of Electromigration with Different Directions of Electron Flow into High-Density Nanotwinned Copper through In Situ HRTEM

Electrothermal Characterization of Multilevel Cu-Graphene Heterogeneous Interconnects in the Presence of an Electrostatic Discharge (ESD)

A Comprehensive study of reliability improvement for 65nm Cu/Low-k process

Research on the Electromigration Failure of W Interconnects under High-Temperature Environment

Grain boundaries-dominated migration failure of copper interconnect under multiphysics field: Insight from theoretical modeling and finite element analysis

Electromigration reliability issues in dual-damascene Cu interconnections

The electric field dependence of Cu migration induced dielectric failure in interlayer dielectric for integrated circuits

Self-heating Aware EM Reliability Prediction of Advanced CMOS Technology by Kinetic Monte Carlo Method