Layer-by-layer assembly of two-dimensional materials into wafer-scale heterostructures

Kibum Kang,Kan-Heng Lee,Yimo Han,Hui Gao,Saien Xie,David A. Muller,Jiwoong Park

DOI: https://doi.org/10.1038/nature23905

IF: 64.8

2017-09-20

Nature

Abstract:Layer-by-layer stacking enables the construction of transition-metal dichalcogenide van der Waals heterostructures with high-quality, uniform interfaces and tunable electrical properties.

multidisciplinary sciences

What problem does this paper attempt to address?

Interlayer couplings, Moiré patterns, and 2D electronic superlattices in MoS2/WSe2 hetero-bilayers.

Chendong Zhang,Chih-Piao Chuu,Xibiao Ren,Ming-Yang Li,Lain-Jong Li,Chuanhong Jin,Mei-Yin Chou,Chih-Kang Shih

DOI: https://doi.org/10.1126/sciadv.1601459

IF: 13.6

2017-01-01

Science Advances

Abstract:By using direct growth, we create a rotationally aligned MoS2/WSe2 hetero-bilayer as a designer van der Waals heterostructure. With rotational alignment, the lattice mismatch leads to a periodic variation of atomic registry between individual van der Waals layers, exhibiting a Moiré pattern with a well-defined periodicity. By combining scanning tunneling microscopy/spectroscopy, transmission electron microscopy, and first-principles calculations, we investigate interlayer coupling as a function of atomic registry. We quantitatively determine the influence of interlayer coupling on the electronic structure of the hetero-bilayer at different critical points. We show that the direct gap semiconductor concept is retained in the bilayer although the valence and conduction band edges are located at different layers. We further show that the local bandgap is periodically modulated in the X-Y direction with an amplitude of ~0.15 eV, leading to the formation of a two-dimensional electronic superlattice.
Two‐Dimensional Layered Heterostructures Synthesized from Core–Shell Nanowires

qi zhang,xu xiao,ruiqi zhao,danhui lv,guanchen xu,zhixing lu,lifei sun,shizhe lin,xiang gao,jun zhou,chuanhong jin,feng ding,l jiao

DOI: https://doi.org/10.1002/anie.201502461

2015-01-01

Angewandte Chemie

Abstract:Controlled stacking of different two-dimensional (2D) atomic layers will greatly expand the family of 2D materials and broaden their applications. A novel approach for synthesizing MoS2/WS2 heterostructures by chemical vapor deposition has been developed. The successful synthesis of pristine MoS2/WS2 heterostructures is attributed to using core-shell WO3-x/MoO3-x nanowires as a precursor, which naturally ensures the sequential growth of MoS2 and WS2. The obtained heterostructures exhibited high crystallinity, strong interlayer interaction, and high mobility, suggesting their promising applications in nanoelectronics. The stacking orientations of the two layers were also explored from both experimental and theoretical aspects. It is elucidated that the rational design of precursors can accurately control the growth of high-quality 2D heterostructures. Moreover, this simple approach opens up a new way for creating various novel 2D heterostructures by using a large variety of heteronanomaterials as precursors.
Tunable Two-Dimensional Interfacial Coupling in Molecular Heterostructures

Beibei Xu,Himanshu Chakraborty,Vivek Yadav,Zhuolei Zhang,Michael L. Klein,Shenqiang Ren

DOI: https://doi.org/10.1038/s41467-017-00390-1

IF: 16.6

2017-01-01

Nature Communications

Abstract:Two-dimensional van der Waals heterostructures are of considerable interest for the next generation nanoelectronics because of their unique interlayer coupling and optoelectronic properties. Here, we report a modified Langmuir-Blodgett method to organize two-dimensional molecular charge transfer crystals into arbitrarily and vertically stacked heterostructures, consisting of bis(ethylenedithio)tetrathiafulvalene (BEDT-TTF)/C60 and poly(3-dodecylthiophene-2,5-diyl) (P3DDT)/C60 nanosheets. A strong and anisotropic interfacial coupling between the charge transfer pairs is demonstrated. The van der Waals heterostructures exhibit pressure dependent sensitivity with a high piezoresistance coefficient of -4.4 × 10-6 Pa-1, and conductance and capacitance tunable by external stimuli (ferroelectric field and magnetic field). Density functional theory calculations confirm charge transfer between the n-orbitals of the S atoms in BEDT-TTF of the BEDT-TTF/C60 layer and the π* orbitals of C atoms in C60 of the P3DDT/C60 layer contribute to the inter-complex CT. The two-dimensional molecular van der Waals heterostructures with tunable optical-electronic-magnetic coupling properties are promising for flexible electronic applications.Two-dimensional van der Waals heterostructures are of interest due to their unique interlayer coupling and optoelectronic properties. Here authors develop a Langmuir-Blodgett method to organize charge transfer molecular heterostructures with externally tunable conductance and capacitance and broadband photoresponse.
Direct Chemical Vapor Deposition Growth and Band-Gap Characterization of MoS2/h-BN van der Waals Heterostructures on Au Foils

Zhepeng Zhang,Xujing Ji,Jianping Shi,Xiebo Zhou,Shuai Zhang,Yue Hou,Yue Qi,Qiyi Fang,Qingqing Ji,Yu Zhang,Min Hong,Pengfei Yang,Xinfeng Liu,Qing Zhang,Lei Liao,Chuanhong Jin,Zhongfan Liu,Yanfeng Zhang

DOI: https://doi.org/10.1021/acsnano.7b01537

IF: 17.1

2017-01-01

ACS Nano

Abstract:Stacked transition-metal dichalcogenides on hexagonal boron nitride (h-BN) are platforms for high-performance electronic devices. However, such vertical stacks are usually constructed by the layer-by-layer polymer-assisted transfer of mechanically exfoliated layers. This inevitably causes interfacial contamination and device performance degradation. Herein, we develop a two-step, low-pressure chemical vapor deposition synthetic strategy incorporating the direct growth of monolayer h-BN on Au foil with the subsequent growth of MoS2. In such vertical stacks, the interactions between MoS2 and Au are diminished by the intervening h-BN layer, as evidenced by the appearance of photoluminescence in MoS2. The weakened interfacial interactions facilitate the transfer of the MoS2/h-BN stacks from Au to arbitrary substrates by an electrochemical bubbling method. Scanning tunneling microscope/spectroscopy characterization shows that the central h-BN layer partially blocks the metal-induced gap states in MoS2/h-BN/Au ...
Vertical Heterostructures of Layered Metal Chalcogenides by Van Der Waals Epitaxy.

Xingwang Zhang,Fei Meng,Jeffrey R. Christianson,Christian Arroyo-Torres,Mark A. Lukowski,Dong Liang,J. R. Schmidt,Song Jin

DOI: https://doi.org/10.1021/nl501000k

2014-01-01

Abstract:We report a facile chemical vapor deposition (CVD) growth of vertical heterostructures of layered metal dichalcogenides (MX2) enabled by van der Waals epitaxy. Few layers of MoS2, WS2, and WSe2 were grown uniformly onto microplates of SnS2 under mild CVD reaction conditions (<500 °C) and the heteroepitaxy between them was confirmed using cross-sectional transmission electron microscopy (TEM) and unequivocally characterized by resolving the large-area Moiré patterns that appeared on the basal planes of microplates in conventional TEM (nonsectioned). Additional photoluminescence peaks were observed in heterostructures of MoS2-SnS2, which can be understood with electronic structure calculations to likely result from electronic coupling and charge separation between MoS2 and SnS2 layers. This work opens up the exploration of large-area heterostructures of diverse MX2 nanomaterials as the material platform for electronic structure engineering of atomically thin two-dimensional (2D) semiconducting heterostructures and device applications.
Strong interlayer coupling in van der Waals heterostructures built from single-layer chalcogenides

Hui Fang,Corsin Battaglia,Carlo Carraro,Slavomir Nemsak,Burak Ozdol,Jeong Seuk Kang,Hans A. Bechtel,Sujay B. Desai,Florian Kronast,Ahmet A. Unal,Giuseppina Conti,Catherine Conlon,Gunnar K. Palsson,Michael C. Martin,Andrew M. Minor,Charles S. Fadley,Eli Yablonovitch,Roya Maboudian,Ali Javey

DOI: https://doi.org/10.1073/pnas.1405435111

IF: 11.1

2014-04-14

Proceedings of the National Academy of Sciences

Abstract:Significance A new class of heterostructures consisting of layered transition metal dichalcogenide components can be designed and built by van der Waals (vdW) stacking of individual monolayers into functional multilayer structures. Nonetheless, the optoelectronic properties of this new type of vdW heterostructure are unknown. Here, we investigate artificial semiconductor heterostructures built from single-layer WSe 2 and MoS 2 . We observe spatially direct absorption but spatially indirect emission in this heterostructure, with strong interlayer coupling of charge carriers. The coupling at the hetero-interface can be readily tuned by inserting hexagonal BN dielectric layers into the vdW gap. The generic nature of this interlayer coupling is expected to yield a new family of semiconductor heterostructures having tunable optoelectronic properties through customized composite layers.
Strain-Directed Layer-By-Layer Epitaxy Toward van der Waals Homo- and Heterostructures

Yi Wan,Jing-Kai Huang,Chih-Piao Chuu,Wei-Ting Hsu,Chien-Ju Lee,Areej Aljarb,Chun-Wei Huang,Ming-Hui Chiu,Hao-Ling Tang,Ci Lin,Xuechun Zhang,Ching-Ming Wei,Sean Li,Wen-Hao Chang,Lain-Jong Li,Vincent Tung

DOI: https://doi.org/10.1021/acsmaterialslett.0c00554

IF: 11.4

2021-03-25

ACS Materials Letters

Abstract:Transition-metal dichalcogenide (TMDC) homo- and heterostacks hold tantalizing prospects for being integrated as active components in future van der Waals (vdW) electronics and optoelectronics. However, most TMDC homo- and heterostacks are created by onerous mechanical exfoliation, followed by a mixing-and-matching process. While versatile enough for pilot demonstrations, these strategies are clearly not scalable for practical technologies and widespread implementations. Here, we report a two-step epitaxy strategy that promotes the growth of second-layer TMDCs on the basal plane of the first TMDCs epilayer. The first-layer TMDCs are grown on substrates where the tensile strength can be tuned by the control of chemical environments. The succeeding epilayers then prefer to grow layer-by-layer on the highly tensile-strained first layers. The result is the growth of high-density TMDC homo (WSe2) bilayers and hetero (WSe2–MoS2) bilayers with an exceedingly high yield (>99% bilayers) and uniformity. A density functional theory simulation further sheds light on how strain engineering shifts the subsequent layer growth preference. Second-harmonic generation and high-angle annular dark-field scanning transmission electron microscopy collectively attest to the AB and AA′ stacking between the TMDC epi- and overlayers. The proposed strategy could be a versatile platform for synthesizing diverse arrays of vdW homo- and heterostacks, thus providing prospects for realizing large-scale and layer-controllable two-dimensional electronics.This article has not yet been cited by other publications.

materials science, multidisciplinary
Ultra-clean assembly of van der Waals heterostructures

Wendong Wang,Nicholas Clark,Matthew Hamer,Amy Carl,Endre Tovari,Sam Sullivan-Allsop,Evan Tillotson,Yunze Gao,Hugo de Latour,Francisco Selles,James Howarth,Eli G. Castanon,Mingwei Zhou,Haoyu Bai,Xiao Li,Astrid Weston,Kenji Watanabe,Takashi Taniguchi,Cecilia Mattevi,Thomas H. Bointon,Paul V. Wiper,Andrew J. Strudwick,Leonid A. Ponomarenko,Andrey Kretinin,Sarah J. Haigh,Alex Summerfield,Roman Gorbachev

DOI: https://doi.org/10.1038/s41928-023-01075-y

2023-08-26

Abstract:Layer-by-layer assembly of van der Waals (vdW) heterostructures underpins new discoveries in solid state physics, material science and chemistry. Despite the successes, all current 2D material (2DM) transfer techniques rely on the use of polymers which limit the cleanliness, ultimate electronic performance, and potential for optoelectronic applications of the heterostructures. In this article, we present a novel polymer-free platform for rapid and facile heterostructure assembly which utilises re-usable flexible silicon nitride membranes. We demonstrate that this allows fast and reproducible production of 2D heterostructures using both exfoliated and CVD-grown materials with perfect interfaces free from interlayer contamination and correspondingly excellent electronic behaviour, limited only by the size and intrinsic quality of the crystals used. Furthermore, removing the need for polymeric carriers allows new possibilities for vdW heterostructure fabrication: assembly at high temperatures up to 600°C, and in different environments including ultra-high vacuum (UHV) and when the materials are fully submerged in liquids. We demonstrate UHV heterostructure assembly for the first time, and show the reliable creation of graphene moiré superlattices with more than an order of magnitude improvement in their structural homogeneity. We believe that broad adaptation of our novel inorganic 2D materials assembly strategy will allow realisation of the full potential of vdW heterostructures as a platform for new physics and advanced optoelectronic technologies.

Applied Physics,Mesoscale and Nanoscale Physics
Assembly of van der Waals heterostructures: exfoliation, searching, and stacking of 2D materials

Momoko Onodera,Satoru Masubuchi,Rai Moriya,Tomoki Machida

DOI: https://doi.org/10.7567/1347-4065/ab5ee0

IF: 1.5

2020-01-01

Japanese Journal of Applied Physics

Abstract:The fascinating point of 2D and layered materials is that they can be assembled into van der Waals(vdW) heterostructures, in which atomic layers are integrated by vdW force. There are almostinfinite potential combinations in vdW heterostructures owing to the multiple degrees of freedom,i.e., the choice of materials, stacking order, and lateral orientation angle at the interfaces. Inthis article, we review the fabrication technique of vdW heterostructures, which has played anessential role in the development of the 2D materials research field. First, we describe the primarytechnique of mechanical exfoliation to fabricate and identify high-quality atomic layers. We thendiscuss the assembly of atomic layers into vdW heterostructures. Finally, we introduce the recentadvancement of fabrication techniques using autonomous robotic assembly. We hope this article wouldhelp the readers to acquire basic knowledge of vdW assembly and motivate them to fabricate vdWheterostructures....

physics, applied
The hot pick-up technique for batch assembly of van der Waals heterostructures

Filippo Pizzocchero,Lene Gammelgaard,Bjarke Sørensen Jessen,José M. Caridad,Lei Wang,James Hone,Peter Bøggild,Timothy J. Booth

DOI: https://doi.org/10.1038/ncomms11894

2016-05-09

Abstract:The assembly of individual two-dimensional materials into van der Waals heterostructures enables the construction of layered three-dimensional materials with desirable electronic and optical properties. A core problem in the fabrication of these structures is the formation of clean interfaces between the individual two-dimensional materials which would affect device performance. We present here a technique for the rapid batch fabrication of van der Waals heterostructures, demonstrated by the controlled production of 22 mono-, bi- and trilayer graphene stacks encapsulated in hexagonal boron nitride with close to 100% yield. For the monolayer devices we found semiclassical mean free paths up to 0.9 micrometer, with the narrowest samples showing clear indications of the transport being affected by boundary scattering. The presented method readily lends itself to fabrication of van der Waals heterostructures in both ambient and controlled atmospheres, while the ability to assemble pre-patterned layers paves the way for complex three-dimensional architectures.

Mesoscale and Nanoscale Physics,Materials Science
Transfer assembly for two-dimensional van der Waals heterostructures

Sidi Fan,Quoc An Vu,Minh Dao Tran,Subash Adhikari,Young Hee Lee

DOI: https://doi.org/10.1088/2053-1583/ab7629

IF: 6.861

2020-02-28

2D Materials

Abstract:Two-dimensional (2D) van der Waals (vdW) heterostructures with pre-determined properties are key ingredients for the success of advanced electronics and optoelectronics. The construction of vdW heterostructures is a prerequisite to obtain the desired performance with high quality. A typical dry/wet transfer technique is a promising route to physically stack vdW heterostructures via a gentle-energy fabrication procedure, allowing the fabrication of atomically sharp and thin heterointerfaces. This strategy has gained considerable attention for intriguing physics phenomena such as superconductivity, topological insulator, valleytronics, and interweaving proximity effect. It also offers various possibilities to construct sophisticated electrical, optical, energy harvesting, and memory devices. Here, we review the state-of-the-art transfer techniques and describe their advantages and drawbacks. We also discuss the transfer methodologies of particular purposes, which are extremely desired for further exploration of the vdW heterostructures such as the integration of diverse functional substrates, passivation of air-sensitive materials, twistronics, vdW contacts by 3D metal, and hybrid devices with 1D or 3D materials. We finally provide potential transfer approaches inspired from our experience, thereby considerably optimizing and simplifying the process.

materials science, multidisciplinary
Scalable synthesis of 2D van der Waals superlattices

Michael J. Motala,Xiang Zhang,Pawan Kumar,Eliezer F. Oliveira,Anna Benton,Paige Miesle,Rahul Rao,Peter R. Stevenson,David Moore,Adam Alfieri,Jason Lynch,Guanhui Gao,Sijie Ma,Hanyu Zhu,Zhe Wang,Ivan Petrov,Eric A. Stach,W. Joshua Kennedy,Shiva Vengala,James M. Tour,Douglas S. Galvao,Deep Jariwala,Christopher Muratore,Michael Snure,Pulickel M. Ajayan,Nicholas R. Glavin

DOI: https://doi.org/10.48550/arXiv.2111.02864

2021-11-04

Materials Science

Abstract:Heterostructure materials form the basis of much of modern electronics, from transistors to lasers and light-emitting diodes. Recent years have seen a renewed focus on creating heterostructures through the vertical integration of two-dimensional materials, including graphene, hexagonal boron nitride, and transition metal dichalcogenides (TMDCs). However, fundamental challenges associated with materials processing have limited material quality and impeded scalability. We demonstrate a method to convert sub-nanometer metal films deposited on silicon and sapphire into TMDC heterostructures through vapor-phase processing. The resulting heterostructures and superlattices exhibit novel properties compared with stand-alone TMDCs, including reduced bandgap, enhanced light-matter coupling, and improved catalytic performance. This robust and scalable synthetic method provides new opportunities to generate a wide range of artificially stacked 2D superlattices with controlled morphology and composition.
Stack Growth of Wafer-Scale Van Der Waals Superconductor Heterostructures

Zhenjia Zhou,Fuchen Hou,Xianlei Huang,Gang Wang,Zihao Fu,Weilin Liu,Guowen Yuan,Xiaoxiang Xi,Jie Xu,Junhao Lin,Libo Gao

DOI: https://doi.org/10.1038/s41586-023-06404-x

IF: 64.8

2023-01-01

Nature

Abstract:Two-dimensional (2D) van der Waals (vdW) heterostructures have attracted considerable attention in recent years1-5. The most widely used method of fabrication is to stack mechanically exfoliated micrometre-sized flakes6-18, but this process is not scalable for practical applications. Despite thousands of 2D materials being created, using various stacking combinations1-3,19-21, hardly any large 2D superconductors can be stacked intact into vdW heterostructures, greatly restricting the applications for such devices. Here we report a high-to-low temperature strategy for controllably growing stacks of multiple-layered vdW superconductor heterostructure (vdWSH) films at a wafer scale. The number of layers of 2D superconductors in the vdWSHs can be precisely controlled, and we have successfully grown 27 double-block, 15 triple-block, 5 four-block and 3 five-block vdWSH films (where one block represents one 2D material). Morphological, spectroscopic and atomic-scale structural analyses reveal the presence of parallel, clean and atomically sharp vdW interfaces on a large scale, with very little contamination between neighbouring layers. The intact vdW interfaces allow us to achieve proximity-induced superconductivity and superconducting Josephson junctions on a centimetre scale. Our process for making multiple-layered vdWSHs can easily be generalized to other situations involving 2D materials, potentially accelerating the design of next-generation functional devices and applications22-24. Stacks of van der Waals superconductor heterostructures comprising many layers and several blocks of two-dimensional materials have been grown in a highly controllable manner at a wafer scale using a high-to-low temperature strategy.
Centimeter Scale Patterned Growth of Vertically Stacked Few Layer Only 2D MoS2/WS2 van der Waals Heterostructure

Nitin Choudhary,Juhong Park,Jun Yeon Hwang,Hee-Suk Chung,Kenneth H. Dumas,Saiful I. Khondaker,Wonbong Choi,Yeonwoong Jung

DOI: https://doi.org/10.1038/srep25456

IF: 4.6

2016-05-05

Scientific Reports

Abstract:AbstractTwo-dimensional (2D) van der Waal (vdW) heterostructures composed of vertically-stacked multiple transition metal dichalcogenides (TMDs) such as molybdenum disulfide (MoS2) and tungsten disulfide (WS2) are envisioned to present unprecedented materials properties unobtainable from any other material systems. Conventional fabrications of these hybrid materials have relied on the low-yield manual exfoliation and stacking of individual 2D TMD layers, which remain impractical for scaled-up applications. Attempts to chemically synthesize these materials have been recently pursued, which are presently limited to randomly and scarcely grown 2D layers with uncontrolled layer numbers on very small areas. Here, we report the chemical vapor deposition (CVD) growth of large-area (>2 cm2) patterned 2D vdW heterostructures composed of few layer, vertically-stacked MoS2 and WS2. Detailed structural characterizations by Raman spectroscopy and high-resolution/scanning transmission electron microscopy (HRTEM/STEM) directly evidence the structural integrity of two distinct 2D TMD layers with atomically sharp vdW heterointerfaces. Electrical transport measurements of these materials reveal diode-like behavior with clear current rectification, further confirming the formation of high-quality heterointerfaces. The intrinsic scalability and controllability of the CVD method presented in this study opens up a wide range of opportunities for emerging applications based on the unconventional functionalities of these uniquely structured materials.

multidisciplinary sciences
Strong interlayer coupling and long-lived interlayer excitons in two-dimensional perovskite derivatives and transition metal dichalcogenides van der Waals heterostructures

Jia Liang,Qing Ai,Xiewen Wen,Xiuyu Tang,Tianshu Zhai,Rui Xu,Xiang Zhang,Qiyi Fang,Christine Nguyen,Yifeng Liu,Hanyu Zhu,Tanguy Terlier,Gary P. Wiederrecht,Pulickel M. Ajayan,Xiaofeng Qian,Jun Lou

DOI: https://doi.org/10.1016/j.mattod.2024.02.008

IF: 24.2

2024-03-01

Materials Today

Abstract:Two-dimensional (2D) van der Waals (vdW) heterostructures offer new platforms for exploring novel physics and diverse applications ranging from electronics and photonics to optoelectronics at the nanoscale. The studies to date have largely focused on transition-metal dichalcogenides (TMDCs) based samples prepared by mechanical exfoliation method, therefore it is of significant interests to study high-quality vdW heterostructures using novel materials prepared by a versatile method. Here, we report a two-step vapor phase growth process for the creation of high-quality vdW heterostructures based on perovskites and TMDCs, such as 2D Cs3Bi2I9/MoSe2, with a large lattice mismatch. Supported by experimental and theoretical investigations, we discover that the Cs3Bi2I9/MoSe2 vdW heterostructure possesses hybrid band alignments consisting of type-I and type-II heterojunctions because of the existence of defect energy levels in Cs3Bi2I9. More importantly, we demonstrate that the type-II heterojunction in the Cs3Bi2I9/MoSe2 vdW heterostructure not only shows a higher interlayer exciton density, but also exhibits a longer interlayer exciton lifetime than traditional 2D TMDCs based type-II heterostructures. We attribute this phenomenon to the reduced overlap of electron and hole wavefunctions caused by the large lattice mismatch. Our work demonstrates that it is possible to directly grow high-quality vdW heterostructures based on entirely different materials which provide promising platforms for exploring novel physics and cutting-edge applications, such as optoelectronics, valleytronics, and high-temperature superfluidity.

materials science, multidisciplinary
Tuning and exploiting interlayer coupling in two-dimensional van der Waals heterostructures

Chenyin Jiao,Shenghai Pei,Song Wu,Zenghui Wang,Juan Xia

DOI: https://doi.org/10.1088/1361-6633/acfe89

2023-10-01

Reports on Progress in Physics

Abstract:Two-dimensional layered materials can stack into new material systems, with van der Waals interaction between the adjacent constituent layers. This stacking process of two-dimensional atomic layers creates a new degree of freedom—interlayer interface between two adjacent layers—that can be independently studied and tuned from the intralayer degree of freedom. In such heterostructures, the physical properties are largely determined by the vdW interaction between the individual layers, i.e., interlayer coupling, which can be effectively tuned by a number of means. In this review, we summarize and discuss a number of such approaches, including stacking order, electric field, intercalation, and pressure, with both their experimental demonstrations and theoretical predictions. A comprehensive overview of the modulation on structural, optical, electrical, and magnetic properties by these four approaches are also presented. We conclude this review by discussing several prospective research directions in 2D heterostructures field, including fundamental physics study, property tuning techniques, and future applications.

physics, multidisciplinary
Tuning Interlayer Coupling in Large-Area Heterostructures with CVD-Grown MoS2 and WS2 Monolayers

Sefaattin Tongay,Wen Fan,Jun Kang,Joonsuk Park,Unsal Koldemir,Joonki Suh,Deepa S. Narang,Kai Liu,Jie Ji,Jingbo Li,Robert Sinclair,Junqiao Wu

DOI: https://doi.org/10.1021/nl500515q

IF: 10.8

2014-01-01

Nano Letters

Abstract:Band offsets between different monolayer transition metal dichalcogenides are expected to efficiently separate charge carriers or rectify charge flow, offering a mechanism for designing atomically thin devices and probing exotic two-dimensional physics. However, developing such large-area heterostructures has been hampered by challenges in synthesis of monolayers and effectively coupling neighboring layers. Here, we demonstrate large-area (>tens of micrometers) heterostructures of CVD-grown WS2 and MoS2 monolayers, where the interlayer interaction is externally tuned from noncoupling to strong coupling. Following this trend, the luminescence spectrum of the heterostructures evolves from an additive line profile where each layer contributes independently to a new profile that is dictated by charge transfer and band normalization between the WS2 and MoS2 layers. These results and findings open up venues to creating new material systems with rich functionalities and novel physical effects.
Novel heterostructures by layering 2D materials

Lei Wang,Cory R Dean,Inanc Meric,Philip Kim,Ken Shepard,James Hone

2013-01-01

Abstract:Since the first isolation of single-layer graphene in 2004, this novel 2D material has continued to receive intense interest. Boron nitride has been identified as an ideal substrate on which to build graphene devices, improving mobilities close to that of suspended structures. The transition metal dichalcogenides are wide band-gap 2D semiconductors, whose applications are just now being explored. New layered heterostructures, fabricated by alternately stacking different sets of these materials, offers unlimited possibilities for exploring new device functionalities. The fabrication of multi-layered structures, however, has been problematic. I will describe a new process that allows unlimited stacking of multi-layer device structures and a novel method to electrically contact these graphene devices. The contact resistance is comparable to the lowest value measured among the conventional metal-graphene contact in …
Constructing van der Waals heterostructures by dry-transfer assembly for novel optoelectronic device

Huihan Li,Xiaolu Xiong,Fei Hui,Dongliang Yang,Jinbao Jiang,Wanxiang Feng,Junfeng Han,Junxi Duan,Zhongrui Wang,Linfeng Sun

DOI: https://doi.org/10.1088/1361-6528/ac5f96

IF: 3.5

2022-03-21

Nanotechnology

Abstract:Abstract Since the first successful exfoliation of graphene, the superior physical and chemical properties of two-dimensional (2D) materials, such as atomic thickness, strong in-plane bonding energy and weak inter-layer van der Waals (vdW) force have attracted wide attention. Meanwhile, there is a surge of interest in novel physics which is absent in bulk materials. Thus, vertical stacking of 2D materials could be critical to discover such physics and develop novel optoelectronic applications. Although vdW heterostructures have been grown by chemical vapor deposition (CVD), the available choices of materials for stacking is limited and the device yield is yet to be improved. Another approach to build vdW heterostructure relies on wet/dry transfer techniques like stacking Lego bricks. Although previous reviews have surveyed various wet transfer techniques, novel dry transfer techniques have been recently been demonstrated, featuring clean and sharp interfaces, which also gets rid of contamination, wrinkles, bubbles formed during wet transfer. This review summarizes the optimized dry transfer methods, which paves the way towards high-quality 2D material heterostructures with optimized interfaces. Such transfer techniques also lead to new physical phenomena while enable novel optoelectronic applications on artificial vdW heterostructures, which are discussed in the last part of this review.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
Layer-by-Layer Assembly of Two-Dimensional Materials: Meticulous Control on the Nanoscale

Jason Lipton,Guo-Ming Weng,Jason A. Rӧhr,Hang Wang,André D. Taylor

DOI: https://doi.org/10.1016/j.matt.2020.03.012

IF: 18.9

2020-05-01

Matter

Abstract:Two-dimensional (2D) materials such as graphene, MXenes, and transition-metal dichalcogenides have recently gained substantial attention for their superlative physicochemical properties. Assembling 2D materials into functional composites is of great importance, which could be the key to breakthroughs in emerging technologies and applications. The layer-by-layer assembly technique is a powerful, versatile, facile, and potentially highly scalable processing tool that has successfully been demonstrated to bring unique materials system advantages to various fields such as energy storage, chemical sensors, nanofiltration membranes, and solar cells. The wide range of precursors (e.g., polyelectrolytes) and tuning parameters that facilitate the incorporation of nanostructured materials makes this technique particularly compelling for creating 2D-material-based composites with ordered structure and tunable material properties. In this review, we highlight the exciting works in the field that utilize 2D materials implemented in layer-by-layer assembled composites. We also discuss the challenges and opportunities toward industrialization of layer-by-layer assembled composites with perspectives on future research directions.

materials science, multidisciplinary

Layer-by-layer assembly of two-dimensional materials into wafer-scale heterostructures

Interlayer couplings, Moiré patterns, and 2D electronic superlattices in MoS2/WSe2 hetero-bilayers.

Two‐Dimensional Layered Heterostructures Synthesized from Core–Shell Nanowires

Tunable Two-Dimensional Interfacial Coupling in Molecular Heterostructures

Direct Chemical Vapor Deposition Growth and Band-Gap Characterization of MoS2/h-BN van der Waals Heterostructures on Au Foils

Vertical Heterostructures of Layered Metal Chalcogenides by Van Der Waals Epitaxy.

Strong interlayer coupling in van der Waals heterostructures built from single-layer chalcogenides

Strain-Directed Layer-By-Layer Epitaxy Toward van der Waals Homo- and Heterostructures

Ultra-clean assembly of van der Waals heterostructures

Assembly of van der Waals heterostructures: exfoliation, searching, and stacking of 2D materials

The hot pick-up technique for batch assembly of van der Waals heterostructures

Transfer assembly for two-dimensional van der Waals heterostructures

Scalable synthesis of 2D van der Waals superlattices

Stack Growth of Wafer-Scale Van Der Waals Superconductor Heterostructures

Centimeter Scale Patterned Growth of Vertically Stacked Few Layer Only 2D MoS2/WS2 van der Waals Heterostructure

Strong interlayer coupling and long-lived interlayer excitons in two-dimensional perovskite derivatives and transition metal dichalcogenides van der Waals heterostructures

Tuning and exploiting interlayer coupling in two-dimensional van der Waals heterostructures

Tuning Interlayer Coupling in Large-Area Heterostructures with CVD-Grown MoS2 and WS2 Monolayers

Novel heterostructures by layering 2D materials

Constructing van der Waals heterostructures by dry-transfer assembly for novel optoelectronic device

Layer-by-Layer Assembly of Two-Dimensional Materials: Meticulous Control on the Nanoscale