Abstract:The SiC trench gate lateral MOSFET featuring dual source trenches is proposed in this work. 2D numerical simulations by TCAD are conducted to study the performance and the reliability of the proposed structure and the conventional ones. With the trench gate, the device specific ON-resistance is reduced by more than 50% compared to that of the planar gate device. The device with proposed dual source trenches can also prevent the Pwell punch through problem that occurs in conventional lateral LMOS. As a result, a blocking voltage over 1200V can be achieved with the proposed structure. The proposed devices have two types of configurations. Compared with the configuration of double shallow trenches, the configuration of deep and shallow trenches can mitigate the curvature effect near the P+ source region by increasing the effective curvature radius. As a result, the RESURF doping and epi thickness windows are both expanded by $1.5{\times }$ . Furthermore, as the deep source trenches push the electric field away from the gate trench, the off-state oxide field is effectively reduced to below 3MV/cm. Thus, the long-term reliability is substantially improved. In addition, the deep and shallow source trench configuration provides the enhanced screen effect and hence lowers the gate charge by 50%. Faster switching can be achieved with this structure.

Single-Event Latch-Up: Increased Sensitivity From Planar to FinFET

Analysis of the Single-Event Latch-up Cross Section of a 16nm FinFET System-on-Chip using Backside Single-Photon Absorption Laser Testing and Correlation with Heavy Ion Data

Single Event Latch-Up Hardening Using TCAD Simulations in 130 nm and 65 nm Embedded SRAM in Flash-Based FPGAs

Total-Ionizing-Dose Effects and Low-Frequency Noise in 30-Nm Gate-Length Bulk and SOI FinFETs with SiO2/HfO2Gate Dielectrics

Research on single event latch-up effect of CMOS based on TCAD

Study of single event latch-up effect of TDC-GP1 by pulsed laser simulation test

Comparative research on “high currents” induced by single event latch-up and transient-induced latch-up

Enhanced low-flux sensitivity (ELFS) effect of neutron-induced displacement damage in bipolar devices: physical mechanism and parametric model

Single Event Upset Sensitivity of 45 Nm FDSOI and SOI FinFET SRAM

FinFET and Nanowire SRAM Radiation Hardness Studies using Ab initio-TCAD Simulation Framework

Analysis of multiple cell upset sensitivity in bulk CMOS SRAM after neutron irradiation

Elimination of Single Event Latch-Up in the ATMEL ATMX150RHA Rad-Hard CMOS 150nm Cell-Based ASIC Family

4H-Sic Trench Gate Lateral MOSFET with Dual Source Trenches for Improved Performance and Reliability

SEL Cross Section Energy Dependence Impact on the High Energy Accelerator Failure Rate

Influence of Fin Width on Single Event-Upset Characteristics of FinFET SRAM

Heavy-ion effects in SiC power MOSFETs with trench-gate design

A Novel MOSFET based Single Event Latchup Detection, Current Limiting & Self Power Cycling circuit for Spacecraft systems

The SEE Hardening Technologies for 16 Nm FinFET

Single Event Effects of Low-Voltage N-type and P-type Trench-gate MOSFET Devices

Simulation studies of Single Event Effects in Ga$_2$O$_3$ MOSFETs

4H-Sic Trench Gate Lateral MOSFET with Deep-Shallow Source Trench for Improved RESURF Dose Window and Reduced Oxide Field