Abstract:The use of semiconductor nanocrystal quantum dots (QDs) in optoelectronic devices typically requires postsynthetic chemical surface treatments to enhance electronic coupling between QDs and allow for efficient charge transport in QD films. Despite their importance in solar cells and infrared (IR) light-emitting diodes and photodetectors, advances in these chemical treatments for lead chalcogenide (PbE; E = S, Se, Te) QDs have lagged behind those of, for instance, II-VI semiconductor QDs. Here, we introduce a method for fast and effective ligand exchange for PbE QDs in solution, resulting in QDs completely passivated by a wide range of small anionic ligands. Due to electrostatic stabilization, these QDs are readily dispersible in polar solvents, in which they form highly concentrated solutions that remain stable for months. QDs of all three Pb chalcogenides retain their photoluminescence, allowing for a detailed study of the effect of the surface ionic double layer on electronic passivation of QD surfaces, which we find can be explained using the hard/soft acid-base theory. Importantly, we prepare highly conductive films of PbS, PbSe, and PbTe QDs by directly casting from solution without further chemical treatment, as determined by field-effect transistor measurements. This method allows for precise control over the surface chemistry, and therefore the transport properties of deposited films. It also permits single-step deposition of films of unprecedented thickness via continuous processing techniques, as we demonstrate by preparing a dense, smooth, 5.3-μm-thick PbSe QD film via doctor-blading. As such, it offers important advantages over laborious layer-by-layer methods for solar cells and photodetectors, while opening the door to new possibilities in ionizing-radiation detectors.

Colloidal Quantum Dot Inks for Single-Step-Fabricated Field-Effect Transistors: The Importance of Postdeposition Ligand Removal

Ligand-Nondestructive Direct Photolithography Assisted by Semiconductor Polymer Cross-Linking for High-Resolution Quantum Dot Light-Emitting Diodes

The Role of Liquid Ink Transport in the Direct Placement of Quantum Dot Emitters Onto Sub-Micrometer Antennas by Dip-Pen Nanolithography.

AFM-IR of Electrohydrodynamically Printed PbS Quantum Dots: Quantifying Ligand Exchange at the Nanoscale

Tailoring the Interfacial Structure of Colloidal "giant" Quantum Dots for Optoelectronic Applications.

Supersonically Spray-Coated Colloidal Quantum Dot Ink Solar Cells

High-Performance Quantum Dot Thin-Film Transistors with Environmentally Benign Surface Functionalization and Robust Defect Passivation.

Surface Ligand Management for Stable FAPbI3 Perovskite Quantum Dot Solar Cells

High-Resolution Colloidal Quantum Dot Film Photolithography via Atomic Layer Deposition of ZnO

Counterion-Mediated Ligand Exchange for PbS Colloidal Quantum Dot Superlattices.

Colloidal Quantum Dot Nanolithography: Direct Patterning via Electron Beam Lithography

The micropatterning of layers of colloidal quantum dots with inorganic ligands using selective wet etching

High Quality Metal-Quantum Dot-Metal Structure Fabricated with a Highly Compatible Self-Aligned Process

Writing on Nanocrystals: Patterning Colloidal Inorganic Nanocrystal Films through Irradiation-Induced Chemical Transformations of Surface Ligands

Dry Transfer Printed Hole Transport Layer for Hysteresis-Free Colloidal Quantum Dot Solar Cells

A Chemically Orthogonal Hole Transport Layer for Efficient Colloidal Quantum Dot Solar Cells

Direct Optical Patterning of Nanocrystal-Based Thin-Film Transistors and Light-Emitting Diodes through Native Ligand Cleavage

Stable PbS quantum dot ink for efficient solar cells by solution-phase ligand engineering

Phase-Transfer Ligand Exchange of Lead Chalcogenide Quantum Dots for Direct Deposition of Thick, Highly Conductive Films

AFM-IR of EHD-Printed PbS Quantum Dots: Quantifying Ligand Exchange at the Nanoscale

Field-effect transistors made of individual colloidal PbS nanosheets