Abstract:The incubation time preceding nucleation and growth of surface nanostructures is interesting from a fundamental viewpoint but also of practical relevance as it determines statistical properties of nanostructure ensembles such as size homogeneity. Using in situ reflection high-energy electron diffraction, we accurately deduce the incubation times for Ga-assisted GaAs nanowires grown on unpatterned Si(111) substrates by molecular beam epitaxy under different conditions. We develop a nucleation model that explains and fits very well the data. We find that, for a given temperature and Ga flux, the incubation time always increases with decreasing As flux and becomes infinite at a certain minimum flux, which is larger for higher temperature. For given As and Ga fluxes, the incubation time always increases with temperature and rapidly tends to infinity above 640 {\deg}C under typical conditions. The strong temperature dependence of the incubation time is reflected in a similar variation of the nanowire number density with temperature. Our analysis provides understanding and guidance for choosing appropriate growth conditions that avoid unnecessary material consumption, long nucleation delays, and highly inhomogeneous ensembles of nanowires. On a more general ground, the existence of a minimum flux and maximum temperature for growing surface nanostructures should be a general phenomenon pertaining for a wide range of material-substrate combinations.

Influence of GaAs substrate properties on the congruent evaporation temperature

Effect of Temperature on the Emission Properties of Quasi 2D Glass-Like Carbon Placed on Silicon and Silicon Dioxide Substrates

Effects of Annealing and Substrate Orientation on Epitaxial Growth of GaAs on Si

Effect of Substrate Orientation on Magnetic Properties of (ga, Mn)As

Congruent evaporation temperature of molecular beam epitaxy grown GaAs (001) determined by local droplet etching

Thermal Annealing Effect on Low-Temperature Molecular-Beam Epitaxy-Grown Gaas - Arsenic Precipitation and the Change of Resistivity

Effect of annealing on the depth profile of hole concentration in (Ga,Mn)As

Monte carlo simulation of planar GaAs nanowire growth

Surface Effects and Challenges for Application of Piezoelectric Langasite Substrates in Surface Acoustic Wave Devices Caused by High Temperature Annealing under High Vacuum

The Annealing Effect Of Schottky Contact On Algan/Gan

Defects in GaN Films Studied by Positron Annihilation Spectroscopy

Electrical Characterization Of Gaas-Layers Grown By Molecular-Beam Epitaxy At Low-Temperature

TEMPERATURE EFFECTS ON THE INTERACTION BETWEEN P AND GaAs(lOO) SURFACE

Study of Surface Morphology in GaAs by Hydrogen and Helium Implantation at Elevated Temperature

Effect of substrate heating on the adhesion and humidity resistance of evaporated MgF2/ZnS antireflection coatings and on the performance of high-efficiency silicon solar cells

Transport Properties of Gaas Layers Grown by Molecular Beam Epitaxy at Low Temperature and the Effects of Annealing

Impact of annealing temperature on structural, electrical and optical properties of epitaxial GaN thin films grown on sapphire substrates by PA-MBE

Electron beam evaporation of oriented Nb films onto GaAs crystals in ultrahigh vacuum

Thermal-Stability of Coevaporated Al-Pt Thin-Films on Gaas Substrates

Analysis of incubation time preceding the Ga-assisted nucleation and growth of GaAs nanowires on Si(111)

Sapphire substrate induced effects on β-Ga2O3 thin films