Abstract:In recent years, wide-bandgap devices (WBG) such as silicon carbide (SiC) and gallium nitride (GaN) transistors have drawn significant research attention in power conversion applications where higher efficiency, higher power density and lower cost are required, for example, in electric vehicle (EV) applications. Owing to its better figures of merit on on-resistance, switching speed and junction temperature, enhancement-mode GaN high electron mobility transistors (HEMTs) are able to be operated with switching frequency up to the megahertz range, through which the size of passive components in the power converters can be significantly reduced. Consequently, the power converter’s integration level and power density can be increased. In GaN-based power converters, the switching energy loss increases naturally along with the switching frequency, which is the dominant loss component. Consequently, it is always one of the top priority performances to be considered in research and development activities. For device manufacturers, with access to internal materials and dimensional parameters, physics-based device models are usually used. Although these models can reveal detailed characteristics of the devices, they are not accessible to the public and can be very time-consuming to develop. Analytical models, that can emulate the transistor’s dynamic behaviour and predict the switching energy loss without consuming too much computing resources, are always an essential tool to help provide guidelines to engineers for circuit design and performance optimization purposes. This thesis develops a computationally inexpensive and straightforward switching transient model which proves to be more accurate than conventional model through simulation and experiments. Currently, in the commercial market, there are only a few mature designs of GaN three-phase inverter products, and most of them are costly. This unavoidable phenomenon is led by the fact that the gate driver and power loop design for GaN is demanding. Some companies such as EPC, Navitas and Power Integrations are committed to monolithic-integrated gate drivers, but they are complex and expensive. Thus, this thesis also aims to design a GaN-based three-phase inverter with low cost and low complexity in the gate drive circuit. In addition, to achieve high performance GaN-based inverter, parasitic components in the power loop have to be minimized. In this thesis study, parasitic parameters of the power loop are extracted through Ansys Q3D simulation and then validated through experimental test results. With accurate parasitic parameters, the layout of the PCBs is improved to achieve better inverter performance.

Calculation of Printed Circuit Board Power-Loop Stray Inductance in GaN or High di/dt Applications

Ultra-Low Inductance Design for A Gan Hemt Based 3L-Anpc Inverter

COMBING MULTILEVEL GREEN'S FUNCTION INTERPOLATION METHOD WITH VOLUME LOOP BASES FOR INDUCTANCE EXTRACTION PROBLEMS

Design of Low Parasitic Inductance SiC MOSFETs Halfbridge Power Modules

A Gallium Nitride Integrated Power Module with Ultra-low Parasitic Inductances and Thermal Resistance

A Simple Method to Evaluate Substrate Layout for Power Modules

A Multiloop Method for Minimization of Parasitic Inductance in GaN-Based High-Frequency DC–DC Converter

A High-Bandwidth and Easy-to-Integrate Parasitics-Based Switching Current Measurement Method for Fast GaN Devices

Design and Analysis of GaN-Based Parallel Flyback Circuit

A GaN HEMT Integrated Power Module with Silver Sintering Processes

An optimized layout with low parasitic inductances for GaN HEMTs based DC-DC converter

Adaptive Stray Inductance Extraction Algorithm Using Linear Regression for Power Module with High Noise Immunity and Accuracy

Study On Planar Busbar Regarding Stray Inductance Minimization And Oscillation Suppression For High Power Converter

Design of Acceptable Stray Inductance Based on Scaling Method for Power Electronics Circuits

Design and Improved Switching Transient Modeling for A GaN-based Three Phase Inverter

Equivalent Inductance Analysis and Quantification for PCB PDN Design

A Coupled 3D FEM-Distribute Circuit Model for Numerical Analysis of Small Time Scale Transients of an IGBT based Inverter

Research on Parasitic Inductance Optimization of GaN Paralleled Cascode Power Module

High Order Distribute Circuit Model of Laminated Busbars and Its Order Reduction Techniques for Simulating Fast Turn-on and Turn-off Transients

A Double-Sided Cooling 650V/30A GaN Power Module with Low Parasitic Inductance

Consideration of flyback converter using GaN devices