Effect of oxygen vacancy concentration on indium tungsten oxide UV-A photodetector

Kuan-Yin Chen,Sheng-Po Chang,Chih-hung Lin

DOI: https://doi.org/10.1039/c8ra08803a

IF: 4.036

2019-01-01

RSC Advances

Abstract:An indium tungsten oxide (IWO) ultraviolet (UV) photodetector was fabricated with radio frequency magnetron sputtering.

chemistry, multidisciplinary

What problem does this paper attempt to address?

Modulation of Oxygen Vacancies in InSnZnO Thin Films and Applications for High-Speed Metal-Semiconductor-metal Ultraviolet Photodetectors

Bojia Chen,Jiyuan Zhu,Qi Han,Shice Wei,Yu Zhang,Shen Hu,Xuefeng Wu,David W. Zhang,Qingqing Sun,Rong Zhang,Kai Huang,Li Ji

DOI: https://doi.org/10.1016/j.apsusc.2024.160586

IF: 6.7

2024-01-01

Applied Surface Science

Abstract:Enhancing the response speed of photodetectors is of great significance, for meeting the requirements of highdensity optical arrays and integration. Wide bandgap indium oxide with high electron mobility makes it suitable for the preparation of high-speed response ultraviolet photodetectors. Nevertheless, oxide semiconductor is prone to form oxygen vacancies during the growth process, leading to persistent photoconductivity in photodetectors, which considerably limits the practical application in ultraviolet detection. In this work, a wellperforming metal-semiconductor-metal structure ultraviolet photodetector based on amorphous indium-tinzinc-oxide was fabricated via co-sputtering technique. By enhancing the oxygen ratio during the co-sputtering, the concentration of oxygen vacancies was effectively reduced, which modulated the performances of the photodetector. This approach not only shortened the photodetector's response time but also omitted the annealing step, enabling a room-temperature fabrication process. As a result, the optimized indium-tin-zincoxide photodetector of 30 % oxygen exhibited remarkably rapid response characteristics under 367 nm ultraviolet irradiation, with rise and decay times of 0.018 and 0.066 s, respectively. Simultaneously, the optimized indium-tin-zinc-oxide phototransistor exhibited exceptional performance metrics, including a high photoresponsivity of 480 A/W, a detectivity of 3.2 x 1012 Jones and an external quantum efficiency of 1336 % under 367 nm ultraviolet irradiation with 1 mW/cm2 light intensity.
Surface Pattern and Optical Properties of In-doped ZnO Thin Films by Hydrothermal Method

Jie-lin DAI,Yao-yao JIANG,Feng-jiao SHANG,Zhi-tao ZHOU,Feng WANG,Min ZHAO,Jian-guo LV

DOI: https://doi.org/10.16552/j.cnki.issn1001-1625.2015.05.007

2015-01-01

Abstract:Zinc oxide films doped with various contents of indium were deposited on ZnO seed crystal by hydrothermal method. Microstructure,surface topography,transmission spectrum and photoluminescent spectrum were characterized by X-ray diffraction( XRD),atomic force microscopy( AFM),UV-Vis spectrometer and fluorescence spectrometer. Results showed that crystal phase structure of ZnO was not changed but crystallinity decreased with the variation of indium content. With increasing indium content,surface rms roughness and average grain size decreased,and the optical band gap Egincreased first then decreased. Each of the thin film had a violet band at about 405 nm. Effect of indium content on intensities and peaks position of these violet bands were studied,and the mechanism of violet emission was also discussed.
Transparent conductive oxide thin films of tungsten-doped indium oxide

Xifeng Li,Qun Zhang,Weina Miao,Li Huang,Zhuangjian Zhang

DOI: https://doi.org/10.1016/j.tsf.2006.07.014

IF: 2.1

2006-01-01

Thin Solid Films

Abstract:Transparent conductive oxide thin film of tungsten-doped In2O3 (IWO) has been prepared by reactive direct current magnetron sputtering from the tungsten-embedded indium metal target. The effect of tungsten doping content on the optoelectrical properties of IWO films was investigated. The lowest resistivity of 2.7 x 10(-4) Omega(.)cm was reproducibly obtained, with carrier mobility greater than 57 cm(2) V-1 s(-1) and carrier concentration of 4.0 x 10(20) cm(-3), as well as the transmission in visible light range exceeding 80%. X-ray diffraction measurements indicate that the as-deposited IWO films are well crystallized with a preferential orientation of (222). (c) 2006 Elsevier B.V. All rights reserved.
Ultrahigh Responsivity In2O3 UVA Photodetector through Modulation of Trimethylindium Flow Rate

Yifei Li,Tiwei Chen,Yongjian Ma,Yu Hu,Li Zhang,Xiaodong Zhang,Jinghang Yang,Lu Wang,Huanyu Zhang,Changling Yan,Zhongming Zeng,Baoshun Zhang

DOI: https://doi.org/10.3390/cryst14060494

IF: 2.7

2024-05-24

Crystals

Abstract:Oxygen vacancies (Vo) can significantly degrade the electrical properties of indium oxide (In2O3) thin films, thus limiting their application in the field of ultraviolet detection. In this work, the Vo is effectively suppressed by adjusting the Trimethylindium (TMIn) flow rate (fTMIn). In addition, with the reduction of the fTMIn, the background carrier concentration and the roughness of the film decrease gradually. And a smooth In2O3 thin film with roughness of 0.44 nm is obtained when the fTMIn is 5 sccm. The MSM photodetectors (PDs) are constructed based on In2O3 thin films with different fTMIn to investigate the opto-electric characteristics of the films. The dark current of the PDs is significantly reduced by five orders from 100 mA to 0.28 μA with the reduction of the fTMIn from 50 sccm to 5 sccm. In addition, the photo response capacity of PDs is dramatically enhanced. The photo-to-dark current ratio (PDCR) increases from 0 to 2589. Finally, the PD with the fTMIn of 5 sccm possesses a record-high responsivity of 2.53 × 103 AW−1, a high detectivity of 5.43 × 107 Jones and a high EQE of 9383 × 100%. Our work provides an important reference for the fabrication of high-sensitivity UV PDs.

materials science, multidisciplinary,crystallography
The Influence of Different Partial Pressure on the Fabrication of InGaO Ultraviolet Photodetectors

Sheng-Po Chang,Li-Yang Chang,Jyun-Yi Li

DOI: https://doi.org/10.3390/s16122145

2016-12-15

Abstract:A metal-semiconductor-metal ultraviolet photodetector has been fabricated with a radiofrequency (RF)-sputtered InGaO thin film. Results for the devices fabricated under different oxygen partial pressure are here in discussed. Under low oxygen partial pressure, the devices work in the photoconductive mode because of the large number of subgap states. Therefore, the devices exhibit internal gain. These defects in the films result in slow switching times and lower photo/dark current ratios. A higher flow ratio of oxygen during the sputtering process can effectively restrain the oxygen vacancies in the film. The responsivity of the photodetector fabricated under an oxygen flow ratio of 20% can reach 0.31 A/W. The rise time and decay time can reach 21 s and 27 s, respectively.
Tungsten Doped Indium Oxide Thin Films Deposited at Room Temperature by Radio Frequency Magnetron Sputtering

Jiaojiao Pan,Wenwen Wang,Dongqi Wu,Qiang Fu,Ding Ma

DOI: https://doi.org/10.1016/j.jmst.2013.10.023

2014-01-01

Abstract:Tungsten doped indium oxide (IWO) thin films were deposited on glass substrate at room temperature by radio frequency reactive magnetron sputtering. Chemical states analysis was carried out, indicating that valence states of element W in the films were W4+ and W6+. The effects of sputtering power and film thickness on the surface morphology, optical and electrical properties of IWO thin films were investigated. The IWO thin films had high transmittance in near infrared (NIR) spectral range. The resistivity, carrier mobility and carrier concentration owned their respective optimum values as sputtering power and thickness changed. The as-deposited IWO film with the minimum resistivity of 3.23 x 10(-4) Omega cm was obtained at a sputtering power of 50 W, with carrier mobility of 27.1 cm(2) V-1 s(-1), carrier concentration of 7.15 x 10(20) cm(-3), average transmittance about 80% in visible region and above 75% in NIR region. It may meet the application requirement of high conductivity and transparency in NIR wavelength region.
MOF-Derived In 2 O 3 Microrods for High-Performance Photoelectrochemical Ultraviolet Photodetectors

MengQi Cui,Zhitao Shao,LiHang Qu,Xin Liu,Huan Yu,Yunxia Wang,Yunxiao Zhang,Zhendong Fu,Yuewu Huang,Wei Feng

DOI: https://doi.org/10.1021/acsami.2c09968

2022-08-20

Abstract:Ultraviolet photodetectors (UV PDs) have attracted extensive attention owing to their wide applications, such as optical communication, missile tracking, and fire warning. Wide-bandgap metal-oxide semiconductor materials have become the focus of high-performance UV PD development owing to their unique photoelectric properties and good stability. Compared with other wide-bandgap materials, studies on indium oxide (In(2)O(3))-based photoelectrochemical (PEC) UV PDs are rare. In this work, we...

materials science, multidisciplinary,nanoscience & nanotechnology
Comparative Study of Encapsulated Solution-Processed Zinc Oxide Ultraviolet Photodetectors with Different Contacts

Siying Li,Wei Tang,Xiaoli Xu,Motao Cao,Yizheng Jin,Xiaojun Guo

DOI: https://doi.org/10.1002/pssa.201431220

2014-01-01

Abstract:Ultraviolet (UV) photodetectors were fabricated with low temperature (<150 degrees C) solution-processed zinc oxide (ZnO) layers. A polydimethylsiloxane (PDMS) layer was used as the encapsulation to protect the devices from ambient effects. Current-voltage (I-V) characteristics, transient characteristics, and the encapsulation effect were compared for ohmic and Schottky contact devices that were formed with aluminum and silver electrodes, respectively. Schottky contact devices were shown to be able to achieve rapid response with the recovery time not affected by the encapsulation. (C) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Effect of Oxygen Treatment on the Electrical Performance and Reliability of IWO Thin-Film Transistors

Yi-Xuan Chen,Yi-Lin Wang,Fu-Jyuan Li,Shu-Jui Chang,Tsung-En Lee,Chao-Ching Cheng,Meng-Chien Lee,Hui-Hsuan Li,Yu-Hsien Lin,Chao-Hsin Chien

DOI: https://doi.org/10.1109/tnano.2024.3381478

2024-04-09

IEEE Transactions on Nanotechnology

Abstract:In this work, we systematically investigated the effect of oxygen treatment on the material and electrical properties of Indium-Tungsten-Oxide thin film transistors (IWO-TFTs) by O2 plasma and rapid thermal oxidation (RTO). With RTO treatment, the electrical characteristics of the IWO-TFTs remarkably depicted a subthreshold swing (S.S.) of 122.5 mV/decade, an Ion/Ioff of around 4.7×108, and more superior immunity stress-induced degradation. According to the X-ray photoelectron spectroscopy (XPS) results under the RTO treatment condition, the lowest vacancy content and the highest Tungsten-Oxide (W-O) bond content were observed. It indicated that the RTO treatment was more effective in reducing the number of oxygen vacancies and stabilizing the bonding structure of IWO films. As a result, the IWO TFTs subjected to RTO treatment exhibited improved performance and enhanced reliability.

engineering, electrical & electronic,materials science, multidisciplinary,nanoscience & nanotechnology,physics, applied
Role of oxygen vacancies in visible emission and transport properties of indium oxide nanowires

Pradeep Gali,Fang-Ling Kuo,Nigel Shepherd,U Philipose

DOI: https://doi.org/10.1088/0268-1242/27/1/015015

IF: 2.048

2011-12-19

Semiconductor Science and Technology

Abstract:We report on the effect of oxygen vacancies on the defect-related emission and the electronic properties of In2O3 nanowires. The nanowires were synthesized by vapor phase transport and had diameters ranging from 80–100 nm and lengths over 10–20 μm, with a growth direction of [0 0 1]. The as-grown nanowires connected in an FET type of configuration show n-type conductivity, which is ascribed to the presence of intrinsic defects like oxygen vacancies in the nanowire. The resistivity, transconductance, field effect mobility and carrier concentration of the In2O3 nanowires were determined to be 1.82 × 10−2 Ω cm, 11.2 nS, 119 cm2 V−1 s−1 and 4.89 × 1017 cm−3, respectively. The presence of oxygen vacancies was also confirmed by photoluminescence measurements, which show a strong UV emission peak at 3.18 eV and defect peaks in the visible region at 2.85 eV, 2.66 eV and 2.5 eV. We present a technique of post-growth annealing in O2 environment and passivation with (NH4)2S to reduce the defect-induced emission.

engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter
Development of Novel Tungsten-Doped High Mobility Transparent Conductive In2O3 Thin Films

Xifeng Li,Qun Zhang,Weina Miao,Li Huang,Zhuangjian Zhang,Zhongyi Hua

DOI: https://doi.org/10.1116/1.2333572

2006-01-01

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

Abstract:A novel high mobility transparent conductive oxide thin film, tungsten-doped indium oxide (IWO), has been successfully grown on conventional glass substrates by reactive direct current magnetron sputtering technique from a metallic target. Analyses of x-ray photoelectron spectroscopy and x-ray diffraction reveal that tetravalent and hexavalent tungsten ions substitute for trivalent host indium ions without changing the crystalline structure of In2O3. IWO thin films were grown with resistivity of 4.4×10−4Ωcm, carrier mobility of 52.8cm2V−1S−1; transmittance exceeding 80% at wavelengths between 380 and 900nm, and average roughness of 7.5nm.
Function of a Dual-Active-Layer Amorphous Indium–Gallium–Zinc Oxide Thin-Film Transistor with Ultraviolet-Induced Effects

Po-Hsun Chen,Hong-Chih Chen,Chuan-Wei Kuo,Jian-Jie Chen,Hui-Chun Huang

DOI: https://doi.org/10.1021/acsaelm.2c01670

IF: 4.494

2023-04-07

ACS Applied Electronic Materials

Abstract:This study presents an ultraviolet (UV) photodetector based on a dual-active-layer amorphous indium–gallium–zinc oxide (a-IGZO) thin-film transistor (TFT), where a Zn-rich IGZO layer is designed as a charge trapping center due to its oxygen vacancies and easy-to-generate interface defects. When a drain bias of 10 V is given, the electron injection occurs closer to the drain end, which causes the active layer to exhibit a significant resistance effect. This phenomenon is clearly observed in the unilateral capacitance–voltage (C–V) measurement. During the irradiation with a UV light source, holes are induced close to the electron injection location in Zn-rich bulk. These holes induced by UV light will cause barrier lowering effects and generate additional photocurrent under UV irradiation. The contrast current under UV light indicates that the on–off ratio between light-induced and dark current reaches 106 in dark conditions. In addition, this device has excellent light response and recovery speed in various light pulse environments. The high sensitivity and the high stability of this dual-active-layer UV light sensing TFT are beneficial to comprehensive and versatile applications in the semiconductor panel industry.

materials science, multidisciplinary,engineering, electrical & electronic
Plasmon‐Enhanced InGaZnO Ultraviolet Photodetectors Tuned by Ferroelectric HfZrO

Yu Liu,Wenjie Chen,Linyuan Zhao,Junxiong Guo,Chen Yang,Xiawa Wang,Wen Huang,Tian-ling Ren,Jun Xu

DOI: https://doi.org/10.1002/aelm.201900588

IF: 6.2

2019-01-01

Advanced Electronic Materials

Abstract:Indium-gallium-zinc oxide (IGZO) is widely used in liquid crystal panels, which are well suited for ultraviolet (UV) photodetectors due to a suitable bandgap and outstanding electrical properties. However, the poor performance for high dark current and low photoresponsivity limits practical applications of IGZO in UV photodetection. Here, a ferroelectric hafnium zirconium oxide (HfZrO) film is introduced to depress dark current and increase the sensitivity by strong ferroelectric-localized field. Meanwhile, gold nanoparticles are used to enhance the photoresponsivity by localized surface plasmon resonance. With optimized designs, the photodetectors achieve a photoresponsivity of 714.6 A W-1, a dark current of 1.1 x 10(-12) A, and a detectivity of 5.4 x 10(12) Jones. Furthermore, the response time at rising and falling edge is as low as 40 and 10 ms, respectively. The performance of the photodetector is far beyond traditional IGZO UV photodetectors. This study establishes a new approach to produce ultraviolet photodetectors with high photoresponsivity, low dark current, high sensitivity, and fast response for further practical applications.
Stability Study of Indium Tungsten Oxide Thin-Film Transistors Annealed under Various Ambient Conditions

Mingyue Qu,Chih-Hsiang Chang,Ting Meng,Qun Zhang,Po-Tsun Liu,Han-Ping D. Shieh

DOI: https://doi.org/10.1002/pssa.201600465

2016-01-01

Abstract:Amorphous tungsten-doped indium oxide thin-film transistors (a-IWO-TFTs) are prepared by RF sputtering and annealed in air, O-2, and N-2 ambients. The influence of annealing ambient on the electrical characteristics and stability of the a-IWO-TFTs is investigated. It is found that the characteristics and stability are improved in O-2 and N-2 ambients, which can be explained by the reduction of structural defects and oxygen vacancies. When annealed in O-2, the TFT device with saturation mobility of 27.55cm(2)V(-1)s(-1), threshold voltage of 0.5V and drain current on-off ratio of 10(8) is obtained. After an applied V-GS of 25 and -25V for 2000s in darkness, the values of Delta V-th are 4.5 and -0.92V, respectively.
High-Performance Self-Powered Photoelectrochemical Ultraviolet Photodetectors Based on an In 2 O 3 Nanocube Film

Nana Zhang,Mengqi Cui,Junxin Zhou,Zhitao Shao,Xinyu Gao,Jiaming Liu,Ruyu Sun,Yuan Zhang,Wenhui Li,Xinghan Li,Jing Yao,Feng Gao,Wei Feng

DOI: https://doi.org/10.1021/acsami.4c00801

IF: 9.5

2024-04-04

ACS Applied Materials & Interfaces

Abstract:Ultraviolet photodetectors (UV PDs) have attracted significant attention due to their wide range of applications, such as underwater communication, biological analysis, and early fire warning systems. Indium oxide (In(2)O(3)) is a candidate for developing high-performance photoelectrochemical (PEC)-type UV PDs owing to its high UV absorption and good stability. However, the self-powered photoresponse of the previously reported In(2)O(3)-based PEC UV PDs is unsatisfactory. In this work,...

materials science, multidisciplinary,nanoscience & nanotechnology
Tungsten-doped In2O3 Transparent Conductive Films with High Transmittance in Near-Infrared Region

Ming Yang,Jiahan Feng,Guifeng Li,Qun Zhang

DOI: https://doi.org/10.1016/j.jcrysgro.2008.05.012

IF: 4

2008-01-01

Vacuum

Abstract:Polycrystalline tungsten-doped In2O3 (IWO) thin films prepared by dc reactive magnetron sputtering exhibit the high transparency in near-infrared region. The optoelectrical properties of the films were investigated in terms of different oxygen contents. The average transmittance of the films at oxygen content from 3.3% to 8.3% is approximately 90% in near-infrared region from 700 to 2500nm, and about 94% in visible region from 400 to 700nm. The high transparency is ascribed to the low carrier concentration of less than 3.8×1020cm−3 of IWO films. The as-deposited IWO films with minimum resistivity of 3.1×10−4Ωcm were obtained at 6.7% oxygen content. Carrier mobility reaches its highest value of 67cm2V−1s−1. Indium tin oxide (ITO) thin film prepared under the same sputtering condition shows a similar resistivity of 3.2×10−4Ωcm but a much lower mobility of 21cm2V−1s−1 and high carrier concentration of 9.4×1020cm−3, with the average transmittance of about 48% in near-infrared region and about 92% in visible region.
Influence of Tungsten Doping on the Performance of Indium–Zinc–Oxide Thin-Film Transistors

Honglei Li,Mingyue Qu,Qun Zhang

DOI: https://doi.org/10.1109/LED.2013.2278846

2013-01-01

Abstract:Thin-film transistors (TFTs) with amorphous indium-zinc-tungsten-oxide (a-IZWO) channel layer and aluminum oxide gate insulator were prepared by radio-frequency magnetron sputtering. It was found that tungsten doping ratios had a significant influence on the performance of the TFTs, and the tungsten incorporation acted as an oxygen vacancy suppressor in the IZWO thin film. The X-ray photoelectron spectroscopy of the a-IZWO thin film showed that the O1s peak associating with the oxygen-deficient regions decreased as the tungsten ratio increased. At tungsten molar ratio of 6.2%, the optimized a-IZWO-TFTs with the saturation mobility of 11.1 cm2/Vs, current ON/OFF ratio of ~107, and subthreshold swing of 0.31 V/decade was obtained.
Stability of Amorphous Indium–Tungsten Oxide Thin-Film Transistors under Various Wavelength Light Illumination

Zhao Yang,Ting Meng,Qun Zhang,Han-Ping D. Shieh

DOI: https://doi.org/10.1109/led.2016.2524417

IF: 4.8157

2016-01-01

IEEE Electron Device Letters

Abstract:Amorphous indium-tungsten oxide (a-IWO) thin-film transistors (TFTs) were prepared by the RF-sputtering method, and their electrical stability under various conditions of wavelength light illumination was investigated. It was found that the electrical stability of the devices was dependent on the light wavelength and the illumination time. The analysis reveals that the improvement of the light illumination stability of the a-IWO-TFTs is ascribed to the oxygen vacancies transition between V-O-V-O(+) and V-O-V-O(2+) under different wavelength illuminations.
Optical properties of ITO/ZnO Schottky diode with enhanced UV Photoresponse

Hsin-Yen Lee,Ming-Yau Chern

DOI: https://doi.org/10.3938/jkps.67.1804

2015-11-01

Journal of the Korean Physical Society

Abstract:Photoluminescence (PL) spectra of zinc oxide (ZnO) samples with different hydrogen peroxide (H2O2) treatment durations were measured to examine several point defects on the surfaces of the films. The results suggest successful oxidation through the reaction between oxygen radicals dissociated from H2O2 and the ZnO surface. To further confirm the defect-induced gain mechanism, we fabricated highly transparent indium-tin-oxide (ITO)/ZnO Schottky diodes and measured the key diode characteristics. Photocurrents were measured at different wavelengths, and possible explanations for the high optical gain within the ultraviolet (UV) region are provided.

physics, multidisciplinary

Effect of oxygen vacancy concentration on indium tungsten oxide UV-A photodetector

Modulation of Oxygen Vacancies in InSnZnO Thin Films and Applications for High-Speed Metal-Semiconductor-metal Ultraviolet Photodetectors

Surface Pattern and Optical Properties of In-doped ZnO Thin Films by Hydrothermal Method

Transparent conductive oxide thin films of tungsten-doped indium oxide

Ultrahigh Responsivity In2O3 UVA Photodetector through Modulation of Trimethylindium Flow Rate

The Influence of Different Partial Pressure on the Fabrication of InGaO Ultraviolet Photodetectors

Tungsten Doped Indium Oxide Thin Films Deposited at Room Temperature by Radio Frequency Magnetron Sputtering

MOF-Derived In 2 O 3 Microrods for High-Performance Photoelectrochemical Ultraviolet Photodetectors

Comparative Study of Encapsulated Solution-Processed Zinc Oxide Ultraviolet Photodetectors with Different Contacts

Effect of Oxygen Treatment on the Electrical Performance and Reliability of IWO Thin-Film Transistors

Role of oxygen vacancies in visible emission and transport properties of indium oxide nanowires

Development of Novel Tungsten-Doped High Mobility Transparent Conductive In2O3 Thin Films

Function of a Dual-Active-Layer Amorphous Indium–Gallium–Zinc Oxide Thin-Film Transistor with Ultraviolet-Induced Effects

Plasmon‐Enhanced InGaZnO Ultraviolet Photodetectors Tuned by Ferroelectric HfZrO

Stability Study of Indium Tungsten Oxide Thin-Film Transistors Annealed under Various Ambient Conditions

High-Performance Self-Powered Photoelectrochemical Ultraviolet Photodetectors Based on an In 2 O 3 Nanocube Film

Tungsten-doped In2O3 Transparent Conductive Films with High Transmittance in Near-Infrared Region

Influence of Tungsten Doping on the Performance of Indium–Zinc–Oxide Thin-Film Transistors

Stability of Amorphous Indium–Tungsten Oxide Thin-Film Transistors under Various Wavelength Light Illumination

Optical properties of ITO/ZnO Schottky diode with enhanced UV Photoresponse