Abstract:A wideband low-noise amplifier (LNA) with low and flat noise figure (NF) is presented in this article. For conventional wideband noise matching, the noise performance in the high-frequency region of the entire wideband is usually deteriorated due to the frequency-dependent nature of the minimum noise figure (NFmin) for a MOSFET. To address this issue, a novel wideband noise matching approach aiming at noise matching in high band is proposed. This approach can reduce the NF in high band at the cost of a slight NF increase in low band, eventually achieving a low and flat NF and thus a better overall noise performance for a wideband LNA. In addition, the multistage noise matching technique is employed at high frequencies to further reduce the NF caused by the second amplification stage. To validate the proposed techniques, a two-stage LNA prototype was designed and fabricated using a 65 nm CMOS process. The experimental results indicate a peak gain of 16.6 dB with a −3 dB bandwidth (BW) from 7.2 to 27.3 GHz (a fractional BW of 116%). Within the entire band of interest, the simulated NF is low and almost constant (3.3–3.4 dB), while the measured NF falls within the range of 3.30–3.72 dB. Considering the uncertainty of NF measurement, a 0.21 dB NF flatness is one of the best results among the reported millimeter-wave wideband LNAs. The measured third-order input intercept point (IIP3) is −6 dBm at 20 GHz, while the power consumption is 13.2 mW. In addition, only two passive transformers are used in this design, leading to a compact chip core area (0.14 mm2).

W-band low-noise amplifier using λ/2-spiral-inductor-based positive feedback technique in 90 nm CMOS

A Compact 2.1–39 GHz Self-Biased Low-Noise Amplifier in 65 Nm CMOS Technology

Analysis and Design of Ultra-Wideband Low-Noise Amplifier with Input/Output Bandwidth Optimization and Single-Ended/Differential-Input Reconfigurability.

A 11.2 Mw 48–62 GHz Low Noise Amplifier in 65 Nm CMOS Technology

Analysis And Design Of Inductorless Wideband Low-Noise Amplifier With Noise Cancellation Technique

Analysis and Design of Wideband Low Noise Amplifier with Digital Control

A 6.512-GHz Balanced Variable-Gain Low-Noise Amplifier With Frequency-Selective Gain Equalization Technique

A K-Band High-Gain Lna In 0.13-Mu M Rf Cmos

A Broadband CMOS LNA for WLAN Applications

A mm‐wave LNA employing current re‐use and non‐linearity cancellation in 28 nm CMOS for automotive RADAR and 6G receivers

A 7.2–27.3 GHz CMOS LNA With 3.51 ±0.21 dB Noise Figure Using Multistage Noise Matching Technique

A dual band CMOS two-stage variable gain low noise amplifier

A 54.4–90 GHz Low-Noise Amplifier in 65-nm CMOS

A 20-GHz 4.8-dB NF low noise amplifier

Inductorless CMOS Low Noise Amplifier for Multiband Application in 0.1–1.2 GHz

A Compact Wideband CMOS Low Noise Amplifier With Gain Flatness Enhancement

Millimeter-Wave Low-Noise Amplifier Design in 28-nm Low-Power Digital CMOS

Wideband Inductorless Low-Power LNAs with Gm Enhancement and Noise-Cancellation.

A wideband inductorless LNA exploiting three-stage feedback and thermal noise canceling

Design of a Wideband Low Noise Amplifier for 70-1000Mhz Frequency Range

A fully integrated 0.18-/spl mu/m CMOS low noise amplifier for 2.4-GHz applications