Self‐Driven High Performance Broadband Photodetector Based on SnSe/InSe van der Waals Heterojunction

Yufa Yan,Ghulam Abbas,Feng Li,Yu Li,Bofang Zheng,Huide Wang,Fusheng Liu

DOI: https://doi.org/10.1002/admi.202102068

IF: 5.4

2022-02-26

Advanced Materials Interfaces

Abstract:Advanced Materials Interfaces, EarlyView.

materials science, multidisciplinary,chemistry

What problem does this paper attempt to address?

Ultrafast visible-infrared photodetector based on the SnSe2/Bi2Se3 heterostructure

Cheng Guo,Changlong Liu,Shi Zhang,Chaofan Shi,Zhiqingzi Chen,XianBin Yu,Xiaoshuang Chen

DOI: https://doi.org/10.1364/OL.472016

IF: 3.6

2022-01-01

Optics Letters

Abstract:Using the inherent properties of a heterostructure, ultrafast photodetectors with high sensitivity can be progressively developed that have the potential to carve a niche among the optoelectronic devices. In this Letter, a heterojunction photodetector based on SnSe2/Bi2Se3 is constructed, and a visible-infrared photoresponse with good sensitivity at room temperature is obtained. The SnSe2/Bi2Se3 photodetector demonstrates a high Iph/Id ratio of 1.2x10(4) at 0V. Moreover, the high responsivity of 2.3 A/W, detectivity of 1.6x10(11) Jones, and fast response time of 40 mu s are simultaneously achieved. The presented results offer an alternative route for ultrafast photodetectors with high sensitivity. (c) 2022 Optica Publishing Group
High-Performance Self-Driven SnSe/Si Heterojunction Photovoltaic Photodetector

Fuwen Luo,Hongxi Zhou,Yuxuan Liu,Yao Xu,Zhiheng Zhang,Chao Chen,Jun Wang

DOI: https://doi.org/10.3390/chemosensors11070406

2023-01-01

Chemosensors

Abstract:Tin monoselenide (SnSe), which belongs to group IV-VI monochalcogenides, has obtained significant attention in the field of photodetection owing to its ultrahigh carrier mobilities. However, the great challenges of preparing high-quality films and high-performance devices still need to be conquered. Herein, high-density continuous SnSe films were deposited on a Si substrate using magnetron sputtering technology, and a self-driven photovoltaic-type broadband photodetector from the visible light range (VIS) to the near-infrared (NIR) range based on SnSe/Si heterojunction was constructed. Owing to its high carrier mobility, narrow band gap structure, and strong internal electric field, the SnSe/Si heterojunction device exhibits an ultrafast response and high responsivity (R), which achieves a wide spectral response of 405-980 nm. Under zero bias voltage, the greatest R and detectivity (D*) of the heterojunction were 704.6 mA/W and 3.36 X 10(11) Jones at 405 nm. Furthermore, the device had a fast response time (rise time) of 20.4 mu s at 980 nm of illumination. This work provides a new strategy for the fabrication of high-performance, low-cost, and self-driven photodetectors.
Mixed-Dimensional InSe–Si Heterojunction Nanostructures for Self-Powered Broadband Photodetectors

Xuxuan Yang,Zhiying Liu,Feng Gao,Shichao Zhang,Huiming Shang,Yunxia Hu,Yunxiao Zhang,Zhendong Fu,Yuewu Huang,Wei Feng,Pingan Hu

DOI: https://doi.org/10.1021/acsanm.1c03100

IF: 6.14

2021-01-01

ACS Applied Nano Materials

Abstract:High-performance self-powered broadband photo-detectors composed of mixed-dimensional (2D-3D) InSe-Si van der Waals heterojunctions (vdWHs) are demonstrated for the first time. Because of the suitable band structures, high electron mobility, and good light absorption of the individual 2D InSe and 3D Si, the 2D-3D vdWHs exhibit an excellent rectifying effect, a broad photoresponse region, high responsivity, good stability, and good optical imaging capability. The electrical and photoresponse performance is superior to that of most other 2D InSe-based vdWHs. The good electrical and photoresponse performance of 2D-3D InSe-Si vdWHs demonstrates their broad applicability in high-performance optoelectronic devices.
Self‐Powered Broadband UV–NIR Photodetectors Based on InSe/PtS2 Van der Waals Heterostructure

Zhengyu Xu,Qinggang Qin,Xiaofei Ma,Jiawang Chen,Xue Liu,Wei Chen,Zhifan Qiu,Lin Wu,Wenshuai Gao,Liang Li

DOI: https://doi.org/10.1002/adom.202401379

IF: 9

2024-08-02

Advanced Optical Materials

Abstract:A high‐performance, broadband self‐powered photodetector based on an InSe/PtS2 van der Waals heterostructure (vdWH) is introduced. The device exhibits excellent self‐powered performance spanning the ultraviolet to near‐infrared spectrum at zero bias. Leveraging the outstanding self‐powered characteristics of the InSe/PtS2 vdWH device, its potential application in imaging is further explored. Van der Waals heterostructures (vdWHs) consisting of 2D materials offer a practical and effective approach for engineering multifunctional, high‐performance photodetectors. However, 2D vdWHs photodetectors based on photoconductive effects require an external power input and are often accompanied by a large dark current, which hinders the development of miniaturization and portability of devices and greatly limits the application of devices in complex environments. Herein, a self‐powered photodetector constructed from an InSe/PtS2 vdWH with an extremely low dark current (≈10−14 A) at zero bias and a large rectification ratio of 5.1 × 103 is reported. Leveraging the robust built‐in electric field of the InSe/PtS2 vdWH, the device demonstrates pronounced photovoltaic effects, characterized by an open‐circuit voltage of 0.395 V and a substantial short‐circuit current of 37.1 nA. Remarkably, a high responsivity and detectivity of 211 mA W−1 and 8.58 × 1012 Jones, an excellent light on/off ratio of 0.8 × 107 , and a fast response time of 465/470 μs are achieved, at zero bias. The device showcases a broadband self‐powered photoresponse spanning from 265 to 1064 nm. This study demonstrates the high potential of the InSe/PtS2 vdWH for broadband self‐powered photodetector applications.

materials science, multidisciplinary,optics
Light‐Induced Electric Field Enhanced Self‐Powered Photodetector Based on Van der Waals Heterojunctions

Huiming Shang,Feng Gao,Mingjin Dai,YunXia Hu,Shuai Wang,Bo Xu,Peng Wang,Bo Gao,Jia Zhang,PingAn Hu

DOI: https://doi.org/10.1002/smtd.202200966

IF: 12.4

2022-11-30

Small Methods

Abstract:The new architecture of self‐powered photodetectors allows for simultaneously enhancing the generation of photocurrent and photo‐response speed in van der Waals heterojunction photodetectors of InSe/WSe2 in InSe/WSe2/SnS2 through a light‐induced electric field. Self‐powered photodetectors have attracted widespread attention due to their low power consumption which can be driven by the built‐in electric field instead of external power, but it is very difficult to achieve high responsivity and fast response speed concurrently. Here, a self‐powered photodetector with light‐induced electric field enhancement based on a 2D InSe/WSe2/SnS2 van der Waals heterojunction is designed. The light‐induced electric field derived from the photo‐generated electrons of SnS2 accumulated at the SnS2/WSe2 interface produces an additional negative gate voltage applied to the WSe2 layer, which enhances the built‐in electric field in the InSe/WSe2/SnS2 heterojunction. Accordingly, the photocurrent and photoresponse speed of the heterostructure device are largely improved. The self‐powered photodetector based on the InSe/WSe2/SnS2 heterostructure exhibits a high responsivity of 550 mA W−1, which is a 50 times increase compared to the InSe/WSe2 photodetector, and the response speed (110/120 μs) is one order of magnitude faster than that of the InSe/WSe2 photodetector. The high responsivity and fast speed are caused by the stronger built‐in electric field modulated by a light‐induced electric field, which can separate carriers effectively and reduce drift times. This device architecture can provide a new avenue to fabricate high‐responsivity, fast self‐power photodetectors by utilizing the van der Waals heterojunction.

materials science, multidisciplinary,chemistry, physical,nanoscience & nanotechnology
High-performance self-powered ultraviolet to near-infrared photodetector based on WS2/InSe van der Waals heterostructure

Jinping Chen,Zhen Zhang,Yi Ma,Jiying Feng,Xiaoyu Xie,Xiaoxuan Wang,Aoqun Jian,Yuanzheng Li,Zhuxin Li,Heng Guo,Yizhi Zhu,Qiannan Cui,Zengliang Shi,Chunxiang Xu

DOI: https://doi.org/10.1007/s12274-022-5323-1

IF: 9.9

2022-12-30

Nano Research

Abstract:van der Waals heterostructures (vdWHs) based on two-dimensional (2D) materials without the crystal lattice matching constraint have great potential for high-performance optoelectronic devices. Herein, a WS 2 /InSe vdWH photodiode is proposed and fabricated by precisely stacking InSe and WS 2 flakes through an all-dry transfer method. The WS 2 /InSe vdWH forms an n—n heterojunction with strong built-in electric field due to their intrinsic n-type semiconductor characteristics and energy-band alignments with a large Fermi level offset between WS 2 and InSe. As a result, the device displays excellent photovoltaic behavior with a large open voltage of 0.47 V and a short-circuit current of 11.7 nA under 520 nm light illumination. Significantly, a fast rising/decay time of 63/76 μs, a large light on/off ratio of 10 5 , a responsivity of 61 mA/W, a high detectivity of 2.5 × 10 11 Jones, and a broadband photoresponse ranging from ultraviolet to near-infrared (325–980 nm) are achieved at zero bias. This study provides a strategy for developing high-performance self-powered broadband photodetectors based on 2D materials.

materials science, multidisciplinary,chemistry, physical,physics, applied,nanoscience & nanotechnology
High Performance Self‐Powered and Vis–Infrared Broadband Photodetectors Based on MoTe2/InSe Van Der Waals Heterostructure

Sixian He,Pu Feng,Yuan Du,Yupeng Ma,Congcong Dang,Aidang Shan,Liancheng Zhao,Tian-Ran Wei,Ming Li,Liming Gao

DOI: https://doi.org/10.1002/adom.202302399

IF: 9

2024-01-01

Advanced Optical Materials

Abstract:Self-powered and broadband photodetectors have important applications in modern technologies and have garnered significant research interest with the increasing concern for green and energy-saving. The emerging 2D materials InSe is considered to be a promising candidate for next-generation photodetectors due to the high carrier mobility, excellent photoelectric response, and flexibility. However, due to its weak absorption of infrared light, it remains a challenging task to achieve high-performance, self-powered, and broadband photodetection. Here, a MoTe2/InSe van der Waals heterostructure (vdWH) device is successfully constructed. Benefiting from the unique band alignment of the heterostructure, a strong built-in electric field is formed. Excitingly, the device exhibits excellent photovoltaic performance with a large open voltage and short circuit current of 390.19 mV and 20.32 nA, respectively. In particular, in self-powered mode, the responsivity (R) is up to 433.88 mA W-1 and the specific detectivity (D*) reaches 1.65 x 10(12) Jones under 405 nm irradiation. Meanwhile, an ultrahigh I-light/I-dark ratio over 10(4), a fast response speed of 99/117 mu s, and a broadband photoresponse range from 405 to 980 nm are achieved. The device demonstrates excellent comprehensive self-powered photodetection performance. This work reveals the great potential of the MoTe2/InSe vdWH for high-performance, broadband, and self-powered photodetection.
Self-Powered and Vis-Infrared Broadband Gr/InSe/MoTe2 Heterostructure Photodetectors with Ultra-Fast Response and Low Dark Current

Sixian He,Yuxin Huang,Chengdong Yin,Yupeng Ma,Aidang Shan,Tian-Ran Wei,Ming Li,Liancheng Zhao,Liming Gao

DOI: https://doi.org/10.1002/lpor.202400480

2024-01-01

LASER & PHOTONICS REVIEWS

Abstract:Self-powered photodetection devices, which meet the requirement of environmental sustainability, are widely designed by PN heterojunctions. The design of the semiconductor/metal interface is vital in PN-junction devices. In particular, the elevated potential barrier at the metal/semiconductor interface impedes efficient carrier transport. Therefore, optimizing the semiconductor/metal interface for the PN junction, either by reducing the interface barrier or leveraging the built-in electric field within the Schottky junction, holds significant importance in enhancing the performance of PN-junction devices. In this study, an InSe/MoTe2 Type-II PN heterojunction photodetector is constructed, with graphene (Gr) and gold (Au) serving as electrodes in contact with InSe and MoTe2, respectively. Benefiting from the reduced barrier in Au/InSe interfaces and the built-in electric field formed at the InSe/MoTe2 and MoTe2/Au interfaces in the same direction, the device achieves an ultra-fast photoresponse speed of 14 mu s and an ultra-low dark current of 8.5 x 10(-14) A at zero bias. Furthermore, the device exhibits a remarkable light on/off ratio up to 10(5) and achieves broad-spectrum photodetection ranging from the visible to infrared wavelength. This research highlights the enormous potential of the Gr/InSe/MoTe2 van der Waals heterostructure in the realms of self-powered photodetection, imaging, and optical communication.
Self-power, Multiwavelength Photodetector Based on Sn-doped Ge Quantum Dots / Hexagonal Silicon Nanowires Heterostructures

Linlin Fan,Lei Wang,Haiyan He,Deren Yang,Dongsheng Li

DOI: https://doi.org/10.1364/ol.524572

2024-01-01

Abstract:Tin-doped germanium quantum dots (Sn-doped Ge QDs)-decorated hexagonal silicon nanowires (h-Si NWs) were adopted to overcome the low infrared response of silicon and the excess dark current of germanium. High-quality Sn-doped Ge QDs with a narrow bandgap can be achieved through Ge-Sn co-sputtering on silicon nanowires by reducing the contact area between heterojunction materials and Sn-induced germanium crystallization. The absorption limit of the heterostructure is extended to 2.2 µm, and it is sensitive to 375-1550 nm light at 0 V, which has optimality at 1342 nm, with a photo-to-dark current ratio of over 815, a responsivity of 0.154 A/W, and a response time of 0.93 ms. The superior performance of the Sn-doped Ge QDs/h-Si NW photodetector in multiwavelength is attractive for multi-scenario applications.
Straddling SnSe2/SnS2 van der Waals tunneling heterostructures for high performance broadband photodetectors

Xiangna Cong,Muhammad Najeeb Ullah Shah,Wenlong He

DOI: https://doi.org/10.1039/d4tc00443d

IF: 6.4

2024-03-16

Journal of Materials Chemistry C

Abstract:Layered van der Waals 2D materials possess remarkable light-matter interaction properties and offer a broad range of tunable bandgaps through the facile fabrication of heterostructures, which have opened up numerous possibilities for applications in the field of optoelectronics. Previous research has indicated that Type-I van der Waals heterostructures hold significant promise for photodetector applications. Nevertheless, the underlying tunneling mechanisms within Type-I heterostructures have not been fully elucidated. In this study, a highly efficient photodiode based on a SnSe2/SnS2 Type-I van der Waals heterostructure was successfully fabricated, which was further validated through density functional theory calculations that explored the interlayer band structure under the influence of electric fields. A unilateral depletion region was formed on SnS2, which effectively suppressed carrier recombination at the interface. The device exhibited an ultrahigh on/off ratio of approximately 107, primarily attributed to the to the depletion effect of SnS2 and the improved interface effect of h-BN. Additionally, the device exhibited a remarkably high responsivity of 37.5 A/W and broadband detection width from ultraviolet to visible spectrum. These unique characteristics, suggest that our findings could pave the way for the development of next-generation, highly efficient optoelectronic devices.

materials science, multidisciplinary,physics, applied
Self-powered In2Se3/PtSe2 photodetector with broadband and fast response

Haozhe Li,Jian Yuan,Qinzhuang Liu,Haoran Mu

DOI: https://doi.org/10.1016/j.matlet.2023.134425

IF: 3

2023-08-01

Materials Letters

Abstract:The emerging van der Waals semiconductor In2Se3 has recently gained great attention in the field of optoelectronics, due to its high optical absorption and direct bandgap. Different types of In2Se3 photodetectors have been demonstrated with high responsivity, though the detection speed and wavelength range are limited by the device geometry and its absorption edge. In this paper, we have fabricated an α-In2Se3/PtSe2 heterojunction photodetector. Taking advantage of the high mobility and narrow bandgap of PtSe2, a wide wavelength response from 405 to 1550 nm and fast repose speed of ∼ 127 µs has been achieved in the heterojunction photodetector. Also, benefiting from the strong built-in electric field between In2Se3 and PtSe2, the photodetector can work without any external bias with a responsivity highly at 80 mA/W. This fast self-powered In2Se3/PtSe2 photodetector presents an avenue for future low-energy-consumption optoelectronics.

materials science, multidisciplinary,physics, applied
High performance self-powered photodetector based on van der Waals heterojunction

Cong Yan,Kun Yang,Hao Zhang,YaoLin Chen,Hong-Xia Liu,kun yang

DOI: https://doi.org/10.1088/1361-6528/ad047f

IF: 3.5

2023-10-19

Nanotechnology

Abstract:Self-powered photodetectors that do not require external power support are expected to play a key role in future photodetectors due to their low power characteristics, but achieving high responsivity remains a challenge. 2D van der Waals heterojunctions are a promising technology for high-performance self-powered photodetectors due to their excellent optical and electrical properties. Here, we fabricate a self-powered photodetector based on In2Se3/WSe2/ReS2 van der Waals heterojunction self-powered photodetector. Due to the presence of ReS2 layer, photocurrent is enhanced as a result of the increase in light absorption efficiency and the effective region for generating photogenerated carriers. The built-in electric field is enhanced by a negative "back-gate voltage" along the p-n junction vertical direction generated by the electrons in the photo-generated electrons accumulation layer. Accordingly, the optical responsivity and the photoresponse speed of this heterojunction self-powered photodetector are greatly boosted. The proposed self-powered photodetector based on the In2Se3/WSe2/ReS2 heterojunction exhibits a high responsivity of 438 mA/W, which is 17 times higher compared to the In2Se3/WSe2 photodetector, a self-powered current (1.1 nA) that is an order of magnitude higher than that of the In2Se3/WSe2 photodetector, and a fast response time that is 250 % faster. Thus the self-powered photodetector with a stronger built-in electric field and a wider depletion zone can provide a new technological support for the fabrication of high responsivity, low power consumption and high speed self-powered photodetectors based on van der Waals heterojunctions.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
Unipolar barriers in near-broken-gap heterostructures for high-performance self-powered photodetectors

Yong Yan,Jie Li,Hengyi Li,Shasha Li,Zhongwei Li,Wei Gao,Yurong Jiang,Xiaohui Song,Congxin Xia,Jingbo Li

DOI: https://doi.org/10.1063/5.0133326

IF: 4

2023-01-26

Applied Physics Letters

Abstract:The two-dimensional heterostructure is a promising research direction in photodetection. However, developing a good photodetector with high responsivity and fast speed is still challenging. Herein, we fabricate a high-performance self-powered broadband (355–1064 nm) photodetector based on a near-broken-gap GeSe/SnS 2 /InSe heterostructure, where SnS 2 is used as a potential hole barrier layer. The device shows an ultrahigh open-circuit voltage (V OC ) of 0.57 V, a high power-dependent responsivity of 1.87 A W −1 at 355 nm, and a fast response time of 8 μ s in the self-powered mode. Based on the near-broken band alignment, the InSe layer with high electron mobility can efficiently collect the photogenerated electrons from the GeSe layer to improve conversion efficiency. Furthermore, the unipolar hole barrier at the interface can inhibit the Langevin recombination resulting in V OC enhancement. Notably, the anisotropy ratio of photocurrent in our device is also enhanced to ∼3.5, which is higher than GeSe photodetectors and other anisotropic devices counterparts. This work provides an opportunity for the realization of the high-sensitivity polarization-sensitive broadband photodetector.

physics, applied
A High-Performance Self-Powered Photodetector Based on WSe2–graphene–MoTe2 Van Der Waals Heterojunctions

Pu Feng,Sixian He,Sixiang Zhao,Congcong Dang,Ming Li,Liancheng Zhao,Hong-Liang Lu,Liming Gao

DOI: https://doi.org/10.1039/d2tc01441f

IF: 6.4

2022-01-01

Journal of Materials Chemistry C

Abstract:The introduction of a graphene interlayer contributes to an ultrafast and high-responsivity self-powered photodetector using a WSe2–graphene–MoTe2 van der Waals heterojunction.
Ultrafast and Sensitive Self-Powered Photodetector Featuring Self-Limited Depletion Region and Fully Depleted Channel with van der Waals Contacts

Mingjin Dai,Hongyu Chen,Fakun Wang,Mingsheng Long,Huiming Shang,Yunxia Hu,Wen Li,Chuanyang Ge,Jia Zhang,Tianyou Zhai,Yongqing Fu,PingAn Hu

DOI: https://doi.org/10.1021/acsnano.0c04329

IF: 17.1

2020-07-28

ACS Nano

Abstract:Self-powered photodetectors with great potential for implanted medical diagnosis and smart communications have been severely hindered by the difficulty of simultaneously achieving high sensitivity and fast response speed. Here, we report an ultrafast and highly sensitive self-powered photodetector based on two-dimensional (2D) InSe, which is achieved by applying a device architecture design and generating ideal Schottky or ohmic contacts on 2D layered semiconductors, which are difficult to realize in the conventional semiconductors owing to their surface Fermi-level pinning. The as-fabricated InSe photodiode features a maximal lateral self-limited depletion region and a vertical fully depleted channel. It exhibits a high detectivity of 1.26 × 1013 Jones and an ultrafast response speed of ∼200 ns, which breaks the response speed limit of reported self-powered photodetectors based on 2D semiconductors. The high sensitivity is achieved by an ultralow dark current noise generated from the robust van der Waals (vdW) Schottky junction and a high photoresponsivity due to the formation of a maximal lateral self-limited depletion region. The ultrafast response time is dominated by the fast carrier drift driven by a strong built-in electric field in the vertical fully depleted channel. This device architecture can help us to design high-performance photodetectors utilizing vdW layered semiconductors.
Broadband photodetector based on vapor-deposited selenium self-supporting films

Heng Zhang,Lu li,Ding-shan Zheng,Yan Xiong,Cheng Yu,Hong Yin,Zao Yi,Xiang-xiang Yu,Wen-xing Yang,Heng Zhang,Lu li,Ding-shan Zheng,Yan Xiong,Cheng Yu,Hong Yin,Zao Yi,Xiang-xiang Yu,Wen-xing Yang

DOI: https://doi.org/10.1016/j.ceramint.2022.06.075

IF: 5.532

2022-10-01

Ceramics International

Abstract:As a high-quality p-type semiconductor, Selenium (Se) has become an important potential candidate for photoelectric devices due to its high photoconductivity, non-linear optical response, and large piezoelectricity. However, the intrinsic Se has a wide bandgap (about 1.77 eV), so it is usually used for photodetection in the visible region. In this work, the Se self-supporting films have been successfully fabricated by an improved physical vapor deposition (PVD) method, and a metal-semiconductor-Metal (MSM) photodetector based on the Se self-supporting films has been designed for the first time. The photodetector shows broadband photoresponse from visible light to near-infrared (450–1550 nm), which is consistent with the experimental absorption spectrum of the obtained film. Besides, photodetection results indicate that the device exhibits a fast response speed (Tr = 4.5 ms, Td = 63.8 ms) with perfect responsivity (8.1 μA/W) and detectivity (1.3 × 105) under 3 V bias voltage and 450 nm (0.971 mW) light irradiation. The research of this paper will further enrich the application and development of traditional Se semiconductors in the field of optoelectronics.

materials science, ceramics
Self-Powered Multicolor Broadband Photodetector Based on GaSe/WSe₂//WSe₂/BP Van Der Waals Heterostructure

Jing Chen,Yabing Shan,Ping Li,Xiao-Ming Wu,Tian-Ling Ren

DOI: https://doi.org/10.1109/ted.2021.3086447

IF: 3.1

2021-01-01

IEEE Transactions on Electron Devices

Abstract:Nowadays, broadband photodetectors are gaining popularity among optoelectronic applications. However, 2-D materials-based Van der Waals heterostructures (vdWHs) photodetectors have a narrow photodetection scope. To broaden the detection bandwidth, a photodetector based on GaSe/WSe 2 and WSe 2 /BP parallel-mode heterojunctions is presented in this work. For convenience, the parallel-mode structure of the GaSe/WSe 2 and WSe 2 /BP heterojunctions are denoted as “GaSe/WSe 2 //WSe 2 /BP.” GaSe/WSe 2 and WSe 2 /BP heterojunctions show high detection performances in the ultraviolet-visible (UV-Vis) and visible-near infrared (Vis-NIR) spectra, respectively. Using the photoresponse complementary characteristics of GaSe/WSe 2 and WSe 2 /BP heterojunctions, the GaSe/WSe 2 //WSe 2 /BP heterojunction photodetector demonstrates self-powered multicolor broadband photodetection cover UV-Vis-NIR spectra. Besides, the photodetector has an on-/off-ratio of ≈ 10 4 , ≈ 0.1 pA dark current, and a short response time ( ~ 40 μs). Our work paves the way for developing 2-D materials-based high-performance broadband photodetectors.
Ultralow Energy Van Der Waals InSe PN Junction Heterostructure Photodetector for NIR Applications

Chaobo Dong,Chandraman Patil,Hao Wang,Sergiy Krylyuk,Albert Davydov,Hamed Dalir,Volker J. Sorger

DOI: https://doi.org/10.1364/cleo_at.2022.jth3b.31

2022-01-01

Abstract:We show a self-driven indium selenide (InSe) p-n heterojunction photodetector with a threefold increase in responsivity at 980 nm over a photoconductor detector based on p- or n-doped regions.
Broadband self-powered photoelectrochemical photodetector based on Te/Se heterostructure nanocomposites

Yaling Wang,Fulai Zhao,Yu Wang,Yichao Zhang,Yongtao Shen,Yiyu Feng,Wei Feng

DOI: https://doi.org/10.1016/j.coco.2022.101175

IF: 8

2022-06-01

Composites Communications

Abstract:Van der Waals (vdW) heterojunctions formed from different nanomaterials not only have the characteristics of each material but also exhibit novel physical properties due to the combination of them. In this work, we report on the facile synthesis of Te/Se heterostructure nanocomposites, and their application as a photosensitive material for photoelectrochemical (PEC)-type photodetectors. The Te/Se-based PEC-type photodetectors are found to achieve excellent photodetection performance and have a broad optical response spectrum that covers the ultraviolet (365 nm) to near-infrared (980 nm) regions. With 1.0 M KOH as the electrolyte, the Te/Se-based PEC-type photodetectors exhibit a photoresponsivity of 4.04 μA W−1, a specific detectivity of 1.6 × 107 Jones, and a fast response time of less than 0.2 s under 365 nm illumination at 0 V, indicating excellent self-powered capability. Additionally, under an applied bias potential of 0.6 V, the photodetectors exhibit a high photoresponsivity of up to 83.19 μA W−1 and a specific detectivity of 3.3 × 108 Jones. Moreover, the Te/Se-based PEC-type photodetectors show good cycle stability after loop running for 1500 s.

materials science, composites
The GeSe/SnSe heterojunction photodetector with self-powered characteristics and high infrared response performance

Yuliang Mao,Tongzhou Deng,Yuxuan Li,Feng He

DOI: https://doi.org/10.1063/5.0188990

IF: 4

2024-04-29

Applied Physics Letters

Abstract:We present a GeSe/SnSe van der Waals heterojunction fabricated using the wet transfer technique. GeSe and SnSe were synthesized via a low-temperature and atmospheric-pressure chemical vapor deposition method. The GeSe/SnSe heterostructure photodetector demonstrates remarkable rectification characteristics, boasting a rectification ratio of 102, along with an exceptionally low dark current, indicating minimal power consumption. Furthermore, it exhibits a broad optical response, spanning from the visible spectrum (450 nm) to the near-infrared (1064 nm). Under 808 nm laser illumination and reverse bias, the device achieves a responsivity of 19.82 A/W, a detectivity of 4.74 × 109 Jones, and an external quantum efficiency of 3048.32%. Notably, the GeSe/SnSe heterojunction photodetector also exhibits self-powered characteristics, with a responsivity of 0.11 mA/W and a detectivity of 5.44 × 106 Jones at zero bias voltage, accompanied by a fast response time of 23/61 ms (rise/fall). These findings underscore the effectiveness of the GeSe/SnSe heterojunction as a strategy for near-infrared photodetectors to simultaneously achieve low power consumption, high photoresponsivity, and self-powered photodetection, which is promising for optoelectronic device applications.

physics, applied

Self‐Driven High Performance Broadband Photodetector Based on SnSe/InSe van der Waals Heterojunction

Ultrafast visible-infrared photodetector based on the SnSe<sub>2</sub>/Bi<sub>2</sub>Se<sub>3</sub> heterostructure

High-Performance Self-Driven SnSe/Si Heterojunction Photovoltaic Photodetector

Mixed-Dimensional InSe–Si Heterojunction Nanostructures for Self-Powered Broadband Photodetectors

Self‐Powered Broadband UV–NIR Photodetectors Based on InSe/PtS2 Van der Waals Heterostructure

Light‐Induced Electric Field Enhanced Self‐Powered Photodetector Based on Van der Waals Heterojunctions

High-performance self-powered ultraviolet to near-infrared photodetector based on WS2/InSe van der Waals heterostructure

High Performance Self‐Powered and Vis–Infrared Broadband Photodetectors Based on MoTe2/InSe Van Der Waals Heterostructure

Self-Powered and Vis-Infrared Broadband Gr/InSe/MoTe2 Heterostructure Photodetectors with Ultra-Fast Response and Low Dark Current

Self-power, Multiwavelength Photodetector Based on Sn-doped Ge Quantum Dots / Hexagonal Silicon Nanowires Heterostructures

Straddling SnSe2/SnS2 van der Waals tunneling heterostructures for high performance broadband photodetectors

Self-powered In2Se3/PtSe2 photodetector with broadband and fast response

High performance self-powered photodetector based on van der Waals heterojunction

Unipolar barriers in near-broken-gap heterostructures for high-performance self-powered photodetectors

A High-Performance Self-Powered Photodetector Based on WSe2–graphene–MoTe2 Van Der Waals Heterojunctions

Ultrafast and Sensitive Self-Powered Photodetector Featuring Self-Limited Depletion Region and Fully Depleted Channel with van der Waals Contacts

Broadband photodetector based on vapor-deposited selenium self-supporting films

Self-Powered Multicolor Broadband Photodetector Based on GaSe/WSe₂//WSe₂/BP Van Der Waals Heterostructure

Ultralow Energy Van Der Waals InSe PN Junction Heterostructure Photodetector for NIR Applications

Broadband self-powered photoelectrochemical photodetector based on Te/Se heterostructure nanocomposites

The GeSe/SnSe heterojunction photodetector with self-powered characteristics and high infrared response performance