Superior Performances of Self‐Driven Near‐Infrared Photodetectors Based on the SnTe:Si/Si Heterostructure Boosted by Bulk Photovoltaic Effect (Small 14/2023)

Aihua Zhong,Yue Zhou,Hao Jin,Huimin Yu,Yunkai Wang,Jingting Luo,Longbiao Huang,Zhenhua Sun,Dongping Zhang,Ping Fan
DOI: https://doi.org/10.1002/smll.202370088
IF: 13.3
2023-04-07
Small
Abstract:Self‐Driven Near‐Infrared Photodetectors In article number 2206262, Hao Jin, Longbiao Huang, Zhenhua Sun, and co‐workers report that bulk photovoltaic effect (BPVE) is found in the SnTe film by Si doping though breaking the inversion symmetry. As a result, additional current originated from the BPVE is generated beyond the p‐n junctions, leading to an improvement of photocurrent by 7.5 times.
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
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