Nanoindentation of cubic silicon carbide on silicon film

Siti Aisyah Zawawi,Azrul Azlan Hamzah,Burhanuddin Yeop Majlis,Faisal Mohd-Yasin
DOI: https://doi.org/10.7567/1347-4065/ab0a28
IF: 1.5
2019-04-10
Japanese Journal of Applied Physics
Abstract:In this work, mechanical properties of an epitaxial silicon carbide-on-silicon (3C-SiC-on-Si) sample were extracted using a Micro Materials Nanotest® indentation system. Maximum load, penetration depth and loading rate were set at 25 mN, 550 nm and 5 mN s−1, respectively. We first plot the load-depth curve of 3C-SiC film and Si substrate. Then, we find the maximum values of hardness, tensile modulus, shear strength, shear modulus and tensile stress of 3C-SiC film. The obtained data provide evidence of the suitability of this film to be applied as an electroacoustic transducer.
physics, applied
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