Abstract:In this work, the reliability of different oxide/4H-SiC interfaces under high temperature and carrier-trapping conditions are investigated carefully. In more detail, the carrier-trapping and temperature effects are considered in the electrical characterization of a low breakdown 4H-SiC-based MOSFET by using in turn SiO2, Si3N4, AlN, Al2O3, Y2O3 and HfO2 as gate dielectric. A gate oxide with a high relative permittivity notably improves the transistor performance. In addition, HfO2 assures the MOSFET best immunity behaviors. The obtained results are explained in terms of the carrier channel mobility, device on-state resistance, and oxide electric field. By using HfO2, however, an increased gate leakage current is calculated. This drawback is overcome by inserting a thin interfacial layer (2 nm-thick) in the HfO2/4H-SiC MOS structure. In particular, two alternative gate stacked dielectrics, involving either SiO2 or Al2O3, have proven their effectiveness in preserving the transistor on-state figures of merit while limiting the gate leakage current in the whole explored gate voltage range. To support the prediction capabilities of the presented modeling analysis, the simulations results are compared with experimental data from literature resulting in a good agreement. Low power MOSFETs are used in several applications for which reliability and durability are as critical as performance. For example, referring to power optimizers for photovoltaic (PV) modules, which fall under the low-load and low-voltage category of DC–DC converters, these devices significantly increase the energy generated by each single PV module operating under harsh conditions and stressing environments. In addition, they have to ensure high reliability over the long term of operation.

Multiobjective Optimization of Design of 4H-SiC Power MOSFETs for Specific Applications

Optimal Design of 100–2000 V 4H–SiC Power MOSFETs using Multi-objective Particle Swarm Optimization Algorithms

Design of Low Parasitic Inductance SiC MOSFETs Halfbridge Power Modules

Design Analysis of 4H-SiC MOSFET for High Power Application

Multi-Objective Optimization of a 1200-V Fan-Out Panel-Level SiC MOSFET Packaging with Improved Genetic and Particle Swarm Algorithms

Thermal-mechanical-electrical Co-design of Fan-Out Panel-Level SiC MOSFET Packaging with a Multi-objective Optimization Algorithm

Numerical Analysis of 4H-SiC MOSFET Design Including High-k Gate Dielectrics for Power electronic Applications

Novel Designed SiC Devices for High Power and High Efficiency Systems

Optimized JFET Regions of 4H-Sic VDMOS with Reduced On-Resistance and Improved Gate Oxide Reliability

Analysis of 4H-SiC MOSFET with distinct high-k/4H-SiC interfaces under high temperature and carrier-trapping conditions

Design and Evaluation of a High Performance Silicon Carbide MOSFET Driver

Physical design optimization of MOSFETs for millimeter wave and sub-millimeter wave circuits

A multi‐objective optimization approach for modeling and analyzing the impact of drive parameters in SiC power converters

An optimized junctionless GAA MOSFET design based on multi-objective computation for high-performance ultra-low power devices

A High-Performance SiC Super-Junction MOSFET With a Step-Doping Profile

Optimal Design of SiC MOSFETs for 20kw DCDC Converter

A novel high-performance junctionless 4H-SiC trench MOSFET with improved switching characteristics

High performance 4H-SiC MOSFET with deep source trench

Design of a Dual Channel High Current Silicon Carbide MOSFET Driver

Design, Fabrication and Characterization of Ultra-High Voltage 4H-Sic MOSFET Transistors

Simultaneous Improvement of High-Frequency and Baliga Figures of Merit of 1.7-kV 4H-SiC MOSFET with Retrograded JFET Doping