Abstract:The ferroelectric properties and polarization switching of Hf0.5Zr0.5O2 thin films annealed at various temperatures are systematically investigated. Piezoresponse force microscopy, as well as switching current measurements, revealed non‐monotonic changes in the polarization switching speed concerning the annealing temperature. These variations are attributed to differences in the ferroelectric‐domain nucleation process induced by different defect levels in the films. Recently, HfO2‐based ferroelectric thin films have attracted widespread interest in developing next‐generation nonvolatile memories. To form a metastable ferroelectric orthorhombic phase in HfO2, a post‐annealing process is typically necessary. However, the microscopic mechanism underlying the effect of annealing temperature on ferroelectric domain nucleation and growth is still obscure, despite its importance in optimizing the operation speed of HfO2‐based devices. In this study, the ferroelectric properties and polarization switching of Hf0.5Zr0.5O2 thin films annealed at different temperatures (550–700 °C) are systematically investigated. Evidently, the crystal structure, remnant polarization, and dielectric constant monotonically change with annealing temperature. However, microscopic piezoresponse force microscopy images as well as macroscopic switching current measurements reveal non‐monotonic changes in the polarization switching speed with annealing temperature. This intriguing behavior is ascribed to the difference in the ferroelectric‐domain nucleation process induced by the amount of oxygen vacancies in the Hf0.5Zr0.5O2 thin films annealed at different temperatures. This work demonstrates that controlling the defect concentration of ferroelectric HfO2 by tuning the post‐annealing process is critical for optimizing device performance, particularly polarization switching speed.

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Effects of Deposition Power and Thermal Treatment on Ferroelectric Properties of Sputtered Hf0.5Zr0.5O2

Tensile Stress Regulated Microstructures and Ferroelectric Properties of Hf0.5Zr0.5O2 Films

Nanoscale Investigation of the Effect of Annealing Temperature on the Polarization Switching Dynamics of Hf0.5Zr0.5O2 Thin Films

Ferroelectricity of pristine Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> films fabricated by atomic layer deposition

Large Polarization of Hf 0.5 Zr 0.5 O x Ferroelectric Film on InGaAs with Electric-Field Cycling and Annealing Temperature Engineering

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Investigation of temperature-dependent ferroelectric properties of Y-doped HfO2 thin film prepared by medium-frequency reactive magnetron co-sputtering

Evolution of ferroelectricity with annealing temperature and thickness in sputter deposited undoped HfO$_2$ on silicon

Improvement in the polarization properties in thin ferroelectric Hf0.5Zr0.5O2 films by two-step flash lamp annealing

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Recent progress for obtaining the ferroelectric phase in hafnium oxide based films: impact of oxygen and zirconium

Effects of Substrate and Annealing Conditions on the Ferroelectric Properties of Non-Doped HfO2 Deposited by RF Plasma Sputter

Disentangling stress and strain effects in ferroelectric HfO2

Large remnant polarization in a wake-up free Hf0.5Zr0.5O2 ferroelectric film

Back‐End‐of‐Line Compatible Low‐Temperature Furnace Anneal for Ferroelectric Hafnium Zirconium Oxide Formation

Interlayer-engineered local epitaxial templating induced enhancement in polarization (2P$_r$ > 70$μ$C/cm$^2$) in Hf$_{0.5}$Zr$_{0.5}$O$_2$ thin films

Ferroelectric and dielectric properties of Hf0.5Zr0.5O2 thin film near morphotropic phase boundary

Control of Ferroelectricity in Solution‐Processed Hafnia Films Through Annealing Atmosphere