Abstract:High‐performance flexible OTFTs with low operational voltages are fabricated by combining a dielectric layer (pV3D3) and a crystalline organic semiconductor (Ph‐BTBT‐10). The resulting transistors exhibit exceptional charge carrier mobility (up to 7 cm2 V−1s−1) and low threshold voltage (VT ≈ 0 V). Extended air stability, mechanical flexibility, and uniform performance during large‐scale glass and parylene substrate fabrication are maintained by them. For applications involving the implantation of organic thin‐film transistors (OTFTs) in flexible environments, maintaining uniform device performance and ultrathin profiles with excellent mechanical stability is crucial for dynamic deformable conditions. This study presents high‐performance, mechanically flexible ultrathin OTFTs with a thickness under 5 μm, designed to be scalable for utilization in large areas. The OTFTs utilized an organosilicon polymer dielectric layer synthesized via initiated chemical vapor deposition combined with the crystalline organic semiconductor 2‐Decyl‐7‐phenyl[1]benzothieno[3,2‐b][1]benzothiophene (Ph‐BTBT‐10). Compared with conventional organic transistors, the OTFTs exhibited exceptional features, such as a charge carrier mobility of up to 7 cm2 V−1 s−1 and a near‐zero threshold voltage. Their performance is showcased across 900 devices on a 10 cm × 10 cm substrate to ensure uniformity and scalability. Additionally, the OTFTs demonstrate remarkable resilience to mechanical deformation, with a 97.4% mobility retention rate under a 20% tensile compression. After 1000 cycles of repeated deformation stress, they maintain a robust 94.6% performance level compared with the initial state. In summary, the ultrathin flexible OTFTs exhibit exceptional resilience to mechanical deformation, extended air exposure, uniformity in large arrays, and high mobility. This makes them promising for diverse applications, such as in vivo organ monitoring and skin displays.

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