Abstract:This paper employs theoretic methods to gain a deep insight into the resistance switching phenomena emerging in a representative redox‐based random access memory cell. The application of a powerful analysis tool to an accurate physics‐based device model enables to understand the complex mechanisms, which induce memory loss in the non‐volatile memristor under both SET and RESET stimuli, opening up new interesting application scenarios. The multidisciplinary field of memristors calls for the necessity for theoretically‐inclined researchers and experimenters to join forces, merging complementary expertise and technical know‐how, to develop and implement rigorous and systematic techniques to design variability‐aware memristor‐based circuits and systems. The availability of a predictive physics‐based model for a memristor is a necessary requirement before commencing these investigations. An interesting dynamic phenomenon, occurring ubiquitously in non‐volatile memristors, is fading memory. The latter may be defined as the appearance of a unique steady‐state behavior, irrespective of the choice of the initial condition from an admissible range of values, for each stimulus from a certain family, for example, the DC or the purely‐AC periodic input class. This paper first provides experimental evidence for the emergence of fading memory effects in the response of a TaOx redox‐based random access memory cell to inputs from both of these classes. Leveraging the predictive capability of a physics‐based device model, called JART VCM v1, a thorough system‐theoretic analysis, revolving around the Dynamic Route Map graphic tool, is presented. This analysis allows to gain a better understanding of the mechanisms, underlying the emergence of history erase effects, and to identify the main factors, that modulate this nonlinear phenomenon, toward future potential applications.

Bifurcation analysis of a TaO memristor model

Transient dynamics of pulse-driven memristors in the presence of a stable fixed point

State Dynamics and Modeling of Tantalum Oxide Memristors

Quantitative, Dynamic TaOx Memristor/Resistive Random Access Memory Model

Nonlinear dynamics and stability analysis of locally-active Mott memristors using a physics-based compact model

Characteristics and Transport Mechanisms of Triple Switching Regimes of TaOx Memristor

Symmetry, Multistability and Antimonotonicity of a Shinriki Oscillator with Dual Memristors

Set Transition Statistics of Different Switching Regimes of TaOx Memristor

TSSM: Three-State Switchable Memristor Model Based on Ag/TiOx Nanobelt/Ti Configuration

A model of TaOx threshold switching memristor for neuromorphic computing

A single-T chaotic circuit based on a physical memristor

Reset Switching Statistics of TaOx-Based Memristor

An analytical approach to engineer multistability in the oscillatory response of a pulse-driven ReRAM

Enhanced Computational Study with Experimental Correlation on I–V Characteristics of Tantalum Oxide (TaOx) Memristor Devices in a 1T1R Configuration

Dynamics of Analog Switching Behavior in Thin Polycrystalline Barium Titanate

A Deep Study of Resistance Switching Phenomena in TaOx ReRAM Cells: System‐Theoretic Dynamic Route Map Analysis and Experimental Verification

Preliminary investigation on the implementation of an artificial synapse using TaOx-based memristor with thermally oxidized active layer

Impulsive modeling of memristor oscillator and its control

Dynamics analysis of memristor chaotic circuit with coexisting hidden attractors

Memristor Circuits for Simulating Nonlinear Dynamics and Their Periodic Forcing

Abel Dynamics of Titanium Dioxide Memristor Based on Nonlinear Ionic Drift Model