Nonlinear dynamics and stability analysis of locally-active Mott memristors using a physics-based compact model

Wei Yi

2024-06-26

Abstract:Locally-active memristors are a class of emerging nonlinear dynamic circuit elements that hold promise for scalable yet biomimetic neuromorphic circuits. Starting from a physics-based compact model, we performed small-signal linearization analyses and applied Chua's local activity theory to a one-dimensional locally-active vanadium dioxide Mott memristor based on an insulator-to-metal phase transition. This approach allows a connection between the dynamical behaviors of a Mott memristor and its physical device parameters as well as a complete mapping of the locally passive and edge of chaos domains in the frequency and current operating parameter space, which could guide materials and device development for neuromorphic circuit applications. We also examined the applicability of local analyses on a second-order relaxation oscillator circuit that consists of a voltage-biased vanadium dioxide memristor coupled to a parallel reactive capacitor element and a series resistor. We show that global nonlinear techniques, including nullclines and phase portraits, provide insights on instabilities and persistent oscillations near non-hyperbolic fixed points, such as a supercritical Hopf-like bifurcation from an unstable spiral to a stable limit cycle, with each of the three circuit parameters acting as a bifurcation parameter. The abruptive growth in the limit cycle resembles the Canard explosion phenomenon in systems exhibiting relaxation oscillations. Finally, we show that experimental limit cycle oscillations in a vanadium dioxide nano-device relaxation oscillator match well with SPICE simulations built upon the compact model.

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What problem does this paper attempt to address?

The problem that this paper attempts to solve is to understand the behavior and stability of nonlinear dynamical circuits based on local - active Mott memristors. Specifically, the author conducts a small - signal linearization analysis of one - dimensional local - active van der Waals vanadium dioxide (VO₂) Mott memristors through a physics - based compact model and applies Chua's local activity theory. This method aims to establish the connection between the dynamical behavior of Mott memristors and their physical device parameters, and completely map the local passive and chaos - edge domains in the frequency and current operating parameter space, which can guide the development of materials and devices for neuromorphic circuit applications.

In addition, the paper also explores the applicability of local analysis in a second - order relaxation oscillation circuit composed of a van der Waals vanadium dioxide memristor with a voltage bias, a parallel - connected capacitor element, and a series - connected resistor. The research shows that global nonlinear techniques, such as zero - crossing curves and phase diagrams, provide insights into the instability near non - hyperbolic fixed points and persistent oscillations, such as the supercritical Hopf - like bifurcation phenomenon from an unstable spiral to a stable limit cycle. Each circuit parameter acts as a bifurcation parameter, and the sudden growth of the limit cycle is similar to the "Canard explosion" phenomenon when relaxation oscillations occur in the system. Finally, the paper shows that the limit - cycle oscillations of the experimentally obtained van der Waals vanadium dioxide nano - device relaxation oscillators are in good agreement with the SPICE simulation results based on the compact model.

**Core Problem Summary**:
- Understand and analyze the behavior and stability of nonlinear dynamical circuits based on local - active Mott memristors.
- Establish the connection between the dynamical behavior of Mott memristors and their physical device parameters.
- Explore the applicability of local analysis in complex circuits, especially how global nonlinear techniques can reveal the complex dynamical behavior of circuits.