Abstract:Over the last decade SiGe has been proposed as a structural material for low thermal budget microelectromechanical systems (MEMS) that can be post-processed on top of standard CMOS driving and controlling electronics [1-6]. There are several ways to decrease the deposition temperature of SiGe and at the same time preserve the desired physical properties for MEMS as low electrical resistivity, high quality factor, economical growth rate and low mean stress and strain gradient. The conventional approach to reduce the crystallization thermal budget is to increase the germanium content to 60%, or more, using conventional Low Pressure Chemical Vapor Deposition (LPCVD) [1-3]. In this case highly conductive polycrystalline films can be realized, but the strain gradient is relatively high. This can be eliminated by furnace annealing at 450°C [2], which might introduce damage to the underlying circuits such as in the case of Cu/low k CMOS. This problem can be alleviated using excimer pulsed laser annealing [7, 8], which has been attractive for low thermal budget applications such as thin film transistors (TFT) [9], solar cells fabricated on glass substrates [10] and for monolithic integration of MEMS devices on top of standard driving electronics using SiGe as an active material [8, 11]. Also the use of hydrogenated microcrystalline SiGe allows for a low thermal budget [12]. In addition, metal induced crystallization has recently been proposed to enhance the crystallization of silicon at temperatures as low as 500°C, and the realized devices had outstanding performance compared to those employing conventional solid-phase crystallization [13]. This technique enhances crystallization by two methods. First, it has been observed that depositing SiGe on top of a thin Al or Ni layer, has a polycrystalline micro-structure close to the metal/ SiGe interface [11]. Annealing this film for a long period (is determined by the annealing temperature), results in metal diffusion and a subsequent crystallization of the film. Finally, when the metal is diffused completely through out the film, it can be etched away. The main disadvantage of this approach is that the mean stress is highly compressive and this might affect the functionality of surface micromachined structures [13].

Crystallization kinetics and role of stress in Al induced layer exchange crystallization process of amorphous SiGe thin film on glass

Nickel Induced Crystallization of Amorphous Silicon Thin Films

Novel Sandwich Structure for Aluminum Induced Crystallization of Amorphous Silicon Thin Films at Low Temperature

Study on Al-induced Crystallization of Al/a-Si:H Bilayer Thin Film

Strain accumulation and relaxation on crack formation in epitaxial AlN film on Si (111) substrate

Stress and Crystallization of Plasma Enhanced Chemical Vapour Deposition Nanocrystalline Silicon Films.

Crystallization-Induced Stress In Thin Phase Change Films Of Different Thicknesses

Phase stability and the interface structure of a nanoscale Si crystallite in Al-based alloys

Native Crystal Growth Revealed by a Joint Microscopy–Calorimetry Technique in (GeS 2 ) 0.1 (Sb 2 S 3 ) 0.9 Thin Amorphous Films: A Critical Role of Internal Stress and Mechanical Defects

Low-temperature preparation of polycrystalline germanium thin films by Al-induced crystallization

Substrate-Induced Stress In Silicon Nanocrystal/Sio2 Multilayer Structures

Ni Induced Crystallization of Amorphous SiGe

Microcrystal-Induced Crystallization Effect for High-Quality Germanium/Silicon Heteroepitaxial Nanofilms

Impact of Alumina Coatings on Aluminum-Induced Crystallization of Polycrystalline Silicon Films

Structural and residual stress changes in Mo/a-Si multilayer thin films with annealing

Metal Induced Crystallization of SiGe at 370°C for Monolithically Integrated MEMS Applications

Fractal growth of amorphous silicon crystallization induced by aluminum

Confined Capillary Stresses During the Initial Growth of Thin Films on Amorphous Substrates

Thermal Activation of the Crystallization Kinetics of Amorphous Silicon

Crystallization of amorphous N‐doped Ge‐rich GST layers deposited on a polycrystalline GST template

Femtosecond Laser-Induced Crystallization of Amorphous Silicon Thin Films under a Thin Molybdenum Layer