Abstract:A monolithic three‐dimensional (M3D) design is proposed to construct ultra‐flexible complementary metal‐oxide‐semiconductor electronics with high electrical‐performance and integration by stacking n‐ and p‐type transistors vertically and saving inter tier vias used in conventional M3D structure. The ultra‐flexible and high‐integration circuits enable a wearable light recorder to collect the harmful blue light illuminated into human eyes by attaching the circuits on a contact lens. Flexible electronics based on complementary metal‐oxide‐semiconductor (CMOS) technology have enabled a smart soft world. However, the trade‐off among flexibility, density, and electrical performance has been a long‐lasting unresolved issue. Here, a monolithic three‐dimensional (M3D) CMOS design is proposed to address this problem and realize ultra‐flexible electronics with high electronic‐performance and integration. This design utilizes vertically stacked p‐type carbon nanotube transistors and n‐type indium gallium zinc oxide ones, which share common gates and drains, saving the inter tier vias required in the traditional M3D structure to reduce routing and improve flexibility. With this design, CMOS logic gates, multi‐stage circuits, ring oscillators (ROs) and memory modules, are demonstrated. This design enables circuits to save up to 45% of area compared with their planar counterparts. Particularly, inverters exhibit a record‐high gain of 191, and 55‐stage ROs can operate well even after bending at a 500‐μm radius for 50 cycles, exhibiting the highest flexibility among the reported ones. The ultra‐flexible and high‐integration RO enables a wearable light recorder to collect harmful blue light shining into human eyes by simply attaching the circuits on a contact lens. This integration method provides possibilities for developing complex‐function wearable electronics.

An Ultra‐Flexible Solution‐Processed Metal‐Oxide/Carbon Nanotube Complementary Circuit Amplifier with Highly Reliable Electrical and Mechanical Stability

Complementary Metal Oxide Silicon Integrated Circuits Incorporating Monolithically Integrated Stretchable Wavy Interconnects

Monolithic Three‐dimensional Integration of Aligned Carbon Nanotube Transistors for High‐performance Integrated Circuits

Matched printed carbon nanotube complementary metal-oxide-semiconductor (CMOS) devices for flexible circuits

Three-Dimensional Flexible Complementary Metal-Oxide-Semiconductor Logic Circuits Based on Two-Layer Stacks of Single-Walled Carbon Nanotube Networks.

Sub-180-nanometer-thick ultraconformable high-performance carbon nanotube-based dual-gate transistors and differential amplifiers

Flexible CMOS Integrated Circuits Based on Carbon Nanotubes with Sub-10 Ns Stage Delays

Highly Scalable and Robust Mesa‐Island‐Structure Metal‐Oxide Thin‐Film Transistors and Integrated Circuits Enabled by Stress‐Diffusive Manipulation

Fully-Solution-Processed Enhancement-Mode Complementary Metal-Oxide-Semiconductor Carbon Nanotube Thin Film Transistors Based on BiI3 -Doped Crosslinked Poly(4-Vinylphenol) Dielectrics for Ultralow-Power Flexible Electronics

Stretchable and Foldable Silicon Integrated Circuits

Bendable metal oxide thin-film transistors and circuits for analog electronics applications

Ultra‐Flexible Monolithic 3D Complementary Metal‐Oxide‐Semiconductor Electronics

Stretchable silicon electronics and their integration with rubber, plastic, paper, vinyl, leather and fabric substrates

Low-voltage High-Performance Flexible Digital and Analog Circuits Based on Ultrahigh-Purity Semiconducting Carbon Nanotubes

Hybrid-type complementary inverters using semiconducting single walled carbon nanotube networks and In-Ga-Zn-O nanofibers

Intrinsically Flexible All-Carbon-nanotube Electronics Enabled by a Hybrid Organic–inorganic Gate Dielectric

Optimized Structural Designs for Stretchable Silicon Integrated Circuits

High-Performance Carbon Nanotube Complementary Electronics and Integrated Sensor Systems on Ultrathin Plastic Foil

Logic circuits composed of flexible carbon nanotube thin-film transistor and ultra-thin polymer gate dielectric

Materials and noncoplanar mesh designs for integrated circuits with linear elastic responses to extreme mechanical deformations

270 n m ultra-thin self-adhesive conformable and long-term air-stable complimentary organic transistors and amplifiers