Abstract:Gallium nitride (GaN) high-electron-mobility transistors (HEMTs) on β-gallium oxide (β-Ga 2 O 3 ) wafers with various back barrier (BB) materials have garnered considerable attention, mainly due to the superior sheet charge density achieved by the confinement of a large number of electrons in the quantum well, which improves RF performance even further. This work investigates the role of different BB materials of Fe-doped AlGaN buffer AlN/GaN HEMTs on β-Ga 2 O 3 wafers (substrate) with gate–source ( L GS ) and gate–drain ( L GD ) distances of 0.4 μm and 1.2 μm, respectively. When compared to traditional substrates such as silicon carbide and silicon, a β-Ga 2 O 3 substrate is more affordable, is accessible in large wafer sizes, and has a lower lattice mismatch (0.4–2.4%) with AlGaN alloys. The effects of gate length scaling (Lg = 50 nm, 100 nm, and 150 nm) on the proposed HEMT devices were also analysed. The short-channel effects can be mitigated by introducing BB structures, which helps avoid further scaling of the barrier layer. With a p-diamond BB of 100 nm thickness, an Fe-doped AlGaN buffer rectangular gated AlN/GaN HEMT Lg = 50 nm results in maximum I D of 5.23 A/mm, g m of 1723 mS/mm, and f T of 361.6 GHz. This superior DC/RF performance can be achieved due to the large confinement of charge carriers into the quantum well and the low leakage current achieved by introducing BB structures and Fe-doped AlGaN buffer. With this outstanding performance, the proposed HEMT device is a promising candidate for next-generation RF applications.

Enhancement of Johnson figure of merit in III‐V HEMT combined with discrete field plate and AlGaN blocking layer

An Intensive Study on Assorted Substrates Suitable for High JFOM AlGaN/GaN HEMT

Novel T-Shaped Gate With Air Gap for AlGaN/GaN HEMTs on Silicon With High Johnson's Figures of Merit

Demonstration of 16 THz V Johnson's figure-of-merit and 36 THz V f max ·V BK in ultrathin barrier AlGaN/GaN HEMTs with slant-field-plate T-gates

Study on a p-GaN HEMT with composite passivation and composite barrier layers

High-performance normally off p-GaN gate high-electron-mobility transistor with In 0.17 Al 0.83 N barrier layer design

An AlGaN-GaN HEMT with p-GaN Extended Gate for Improvements on Current Dispersion and Breakdown Characteristics

High-performance normally off p-GaN gate high-electron-mobility transistor with In0.17Al0.83N barrier layer design

Performance improvement of enhancement-mode GaN-based HEMT power devices by employing vertical gate structure and composite interlayers

Novel Super Stack Passivation in AlGaN/GaN HEMT for Power Electronic Applications

Improvement of Single Event Transient Effects for a Novel AlGaN/GaN High Electron-Mobility Transistor with a P-GaN Buried Layer and a Locally Doped Barrier Layer

Study of AlGaN/GaN Vertical Superjunction HEMT for Improvement of Breakdown Voltage and Specific On-Resistance

Simulation Design of High Baliga's Figure of Merit Normally-off P GaN Gate AlGaN/GaN Heterostructure Field Effect Transistors with Junction Field Plates

A Novel AlGaN/Si3N4 Compound Buffer Layer HEMT with Improved Breakdown Performances

Novel High-Energy-Efficiency AlGaN/GaN HEMT with High Gate and Multi-Recessed Buffer

Study of Normally-Off AlGaN/GaN HEMT with Microfield Plate for Improvement of Breakdown Voltage

Performance Analysis of AlN/GaN HEMTs on β-Ga2O3 Through Exploration of Varied Back Barriers: An Investigative Study for Advanced RF Power Applications

Current-collapse Suppression and Leakage-Current Decrease in AlGaN/GaN HEMT by Sputter-Tan Gate-Dielectric Layer

Simulation of High Breakdown Voltage, Improved Current Collapse Suppression, and Enhanced Frequency Response AlGaN/GaN HEMT Using A Double Floating Field Plate

Simulation and analysis of enhancement-mode AlGaN/GaN HEMT with P-I-N junction gate

Optimization AlGaN/GaN HEMT with Field Plate Structures