Abstract:This paper describes the improvement of advanced semi-additive processes (SAP) to demonstrate 1.5-5 μm lines and spaces with 4-5 μm diameter photo-vias for multiple re-distribution layers (RDL) at 20 μm bump pitch on glass interposers. High performance computing systems for networking and graphics are driving ultra-high bandwidth interconnections between logic and memory devices. This signal bandwidth need with lowest power consumption has enabled the application of 2.5D interposers for high density chip-to-chip interconnections. Silicon interposers with through-silicon-vias (TSVs) are capable of ultra-high density wiring between logic and memory chips, but use back end of line (BEOL) dual damascene processes, requiring chemical mechanical polishing (CMP), leading to high process cost, which limits their expansion into lower cost and higher volume applications. On the other hand, organic substrates processed on large panels have large capture pads for via landing due to their poor dimensional stability, limiting the bump pitch scaling at chip level. Glass interposers have been proposed to address the limitations of both silicon interposers and organic substrates in recent years. This paper reports on research to extend low cost and large panel semi-additive processes (SAP) to below 5um lines and vias. To achieve this, high resolution lithography processes combined with photosensitive dry film polymer dielectrics were optimized to form fine patterns and ultra-small micro-vias. A major challenge for multilayer RDL is the non co-planarity of copper electroplating, and a new cost-effective copper surface planarization process was proposed and evaluated for surface co-planarity improvement, leading to better yields for multi-layer RDL fabrication.

Optimized ECD Cu RDL Process with Via Filling Capability for Next Generation Packaging

Influence of Electroplating Current Density on Through Silicon Via Filling

Potential-Dependence Of Additives Distribution In Copper Electrodeposition Via Filling

Modeling the Bottom-Up Filling of Through Silicon Vias with Different Additives

Fast copper plating process for TSV fill

Novel Copper Filling Methods for 2 Μm × 20 Μm TSVs with an Electroless Deposited Co or Atomic Layer Deposited Ru Seed Layer

Evaluating the Via Filling Performance with Thin Surface Cu by the Synergistic Effect of Different Additives

Copper electroplating technology for microvia filling

Advances in Panel Scalable Planarization and High Throughput Differential Seed Layer Etching Processes for Multilayer RDL at 20 Micron I/O Pitch for 2.5D Glass Interposers

Cu electroplating chemistry and process enabling rapid TSV filling with long bath life

Synergistic Effect of Additives on Filling of Tapered TGV Vias by Copper Electroplating

Deep Reinforcement Learning-Based Ground-Via Placement Optimization for EMI Mitigation

Copper Filling Process for Small Diameter, High Aspect Ratio Through Silicon Via (Tsv)

Study of microvia filling process based on multi-physical coupling

Copper Electrodeposition for 3D Integration

Optimizing Copper Filling Process For Through Silicon Via (TSV)

Design And Optimization Of Redistribution Layer (Rdl) On Tsv Interposer For High Frequency Applications

Development of conductive adhesive materials for via fill applications

Polymer Based Dual Damascene Process for Fine Pitch RDL Advanced Packaging

Filling Technique Of Through Silicon Via By Co-Depositing Copper And Sic Nano-Particles

Computational and experimental study of a novel L-Cysteine hydrochloride leveler for copper electroplated via fill in redistribution layers