Effect of Annealing Temperature on Properties of Barium Zirconium Titanate Thin Films Deposited by Sol-Gel Method
Xiaoling Deng,Jiamu Huang,Wei Cai,Chunlin Fu,Dongjiao Guo
DOI: https://doi.org/10.1080/10584587.2012.741409
2012-01-01
Integrated Ferroelectrics
Abstract:With inorganic salts as the main raw material, the BaZr0.2Ti0.8O3 thin films were prepared on the Pt/Ti/SiO2/Si substrates by sol-gel method. The films were annealed at 600, 700, 800, 900, 1000°C for 30 min in oxygen. X-ray diffraction shows that the BZT films start to crystallize at 600°C, but crystallization basically completed at 700°C and the crystal structure of the films belongs to tetragonal phase. Analyzing the morphology by scanning electron microscopy, it was found that the film structure is dense, and with less crack and larger grains when the annealing temperature is 900°C; while above this temperature obvious polarization versus electric voltage (P-V) hysteresis loop was observed in BaZr0.2Ti0.8O3 films. When the annealing temperature is 1000°C the remnant polarization (2P r) and the coercive field (2E C) of BaZr0.2Ti0.8O3 films obtained from the hysteresis loop are 1.7 μC/cm2 and 6.7 kV/cm, respectively.
engineering, electrical & electronic,physics, condensed matter, applied