Post-Separation Processing for Silicon Heterojunction Half Solar Cells With Passivated Edges
Anna Mnzer,Puzant Baliozian,Anamaria Steinmetz,Torsten Geipel,Sebastian Pingel,Armin Richter,Sebastian Roder,Elmar Lohmller,Alma Spribille,Ralf Preu,Anna Munzer,Elmar Lohmuller
DOI: https://doi.org/10.1109/jphotov.2021.3099732
2021-11-01
IEEE Journal of Photovoltaics
Abstract:We investigate different postseparation process routes for silicon heterojunction (SHJ) half solar cells, separated by thermal laser separation. SHJ half cells with and without aluminum oxide (Al2O3) deposition as edge passivation layer undergo different annealing processes, including i) a hotplate; ii) an inline oven; and iii) an ultrafast light soaking process. SHJ half cells with an initial efficiency of 21.7% reach 21.9% after Al2O3 deposition and inline oven annealing (pseudo fill factor, pFF, increase of 0.3%abs and series resistance RS decrease by −0.05 Ωcm2). The light soaking process is known to lead to improved surface passivation and carrier transport for SHJ cells. For light soaking processed SHJ half cells, an 21.9% efficiency is obtained (RS reduction by −0.13 Ωcm2 and open-circuit voltage VOC increase by +2 mV compared to the initial half cell). By combining Al2O3 deposition and subsequent light soaking, SHJ half cells reach 22.1% efficiency, resulting from the combined benefits for pFF, RS, and VOC of the two processes. No additional thermal annealing of the Al2O3 layer is necessary, proving that the light soaking process is sufficient to activate the Al2O3 passivation. This allows for a two-step postseparation process sequence, resulting in SHJ half cells featuring similar efficiencies to light soaking processed full cells. SHJ half cells, integrated into one-cell modules-after Al2O3 deposition and light soaking, show an efficiency advantage of +0.3%abs in comparison to modules with untreated half cells. Thus, we demonstrate the possibility of compensating separation losses for SHJ half cells and the transferability of the improvements to module level.