Microvia Filling by Copper Electroplating over SPS Self-Assembly Monolayer on Au and Cu Seed Layers

Wei-Ping Dow,Ming-Yao Yen

DOI: https://doi.org/10.1149/ma2005-02/17/688

2006-02-17

ECS Meeting Abstracts

Abstract:Abstract not Available.

What problem does this paper attempt to address?

Microvia Filling by Cu Electroplating Over a Au Seed Layer Modified by a Disulfide

Wei-Ping Dow,Yong-Da Chiu,Ming-Yao Yen

DOI: https://doi.org/10.1149/1.3078407

IF: 3.9

2009-01-01

Journal of The Electrochemical Society

Abstract:A plating process for microvia filling by Cu electroplating, carried out in a plating bath without an accelerator but with a suppressor only, is proposed in this work. The seed layer of microvia used for subsequent Cu-filling plating is Au formed by electroless plating. The surface of the Au seed layer is modified in a solution containing bis(3-sulfopropyl)-disulfide (SPS) and various supporting electrolytes. This pretreatment is similar to the self-assembly monolayer (SAM) of a thiol molecule on a Au substrate. The coverage density of the adsorbed thiolate strongly depends on the presence or the absence of a supporting electrolyte and it crucially determines the filling performance of the plating process. The plating results demonstrate that the thiolate adlayer which is initially formed on the Au seed layer is transferable onto the surface of the plated Cu and then interacts with chloride ions to further facilitate Cu nucleation and growth. According to the results of the filling plating and the electrochemical analysis, an accelerating mechanism of SPS-SAM for copper electrodeposition and its transferring mechanism are proposed in this work.

electrochemistry,materials science, coatings & films
Study on the behaviors of Cu filling in special through-silicon-vias by the simulation of electric field distribution

Haiyong Cao,Tao Hang,Huiqin Ling,Wei Luo,Xue Feng,Ming Li

DOI: https://doi.org/10.1016/j.mee.2013.11.011

IF: 2.3

2014-01-01

Microelectronic Engineering

Abstract:The filling mechanism of a special through silicon vias (TSV) structure is investigated by electrochemical test and simulation technique compared with the conventional TSV structure in this paper. The effects of additives in methanesulfonic solution are briefly studied by cyclic voltammetry to obtain the suitable copper plating condition for conventional TSV. The electric field distribution in the special TSV during the electrodeposition has been simulated by the software ANSYS. Different from the conventional TSV, the electric field gathered at the bottom of the via in the initial stage of special TSV, which benefit the bottom up filling in the via. And after the deposited copper spread to the whole surface of the chip, the electric field distribution becomes similar to the conventional TSV. With the help of the additives, the void free copper electrodeposition in special TSV was finally achieved.
Wetting Process of Copper Filling in Through Silicon Vias

Junhong Zhang,Wei Luo,Yi Li,Liming Gao,Ming Li

DOI: https://doi.org/10.1016/j.apsusc.2015.10.214

IF: 6.7

2015-01-01

Applied Surface Science

Abstract:In this paper, wetting process of copper filling in through silicon vias was investigated by agitation and vacuum pretreatment. Copper filling followed the pretreatment was fabricated in electrolyte with optimal additives concentration. By agitation pretreatment, a large void was observed at the bottom of the vias where the copper seed layer was clearly seen, which was attributed to the insufficient wetting of vias. In the blind vias with higher aspect ratio, the ambient gas phase was difficult to be completely removed from the vias by agitation. This resulted in electrolyte having better wettability does not reach all the places of the vias by capillarity. The vacuum pretreatment results suggested that the air inside the vias was almost completely evacuated. Hence, the deionized water used as wetting solution easily permeated the blind vias relying on atmospheric pressure. Consequently, the uniform, complete and void-free copper filling was achieved due to better wettability of 273 K deionized water. Nevertheless, deionized water with temperature higher than the critical vaporization temperature yielded a void formation at the bottom of the vias, which resulted from the insufficient wetting caused by the vaporization of deionized water. The conclusions drawn by the experimental results were employed in the through silicon vias, and void-free copper filling in the vias having aspect ratio as high as 16 was fabricated. (C) 2015 Elsevier B.V. All rights reserved.
Influence of Electroplating Current Density on Through Silicon Via Filling

Ying Zhu,Wei Luo,Zhipeng Chen,Ming Li,Liming Gao

DOI: https://doi.org/10.1109/icept.2015.7236564

2015-01-01

Abstract:TSV (through silicon via) filling is one of the key challenges for 3D integration. Non-uniform distribution of current density inside the high aspect ratio via often leads to pinch-off effect which seriously harms interconnect functionality and reliability. An additives system, consisting of an accelerator (SPS), a suppressor (PEG), a leveler (JGB) and chloride ions, is common choice for bottom-up filling of TSV. In this paper, a numerical model was built on the basis of experimental polarization curve to simulate copper electrodeposition process of TSV. Via filling with three different electroplating current density is simulated and analyzed using this model. The good fitting of simulation profiles toward experiment results proves this method effective for copper filling results prediction.
Effect of leveler on microstructure and stress of electroplated copper for TSV application

Xue Feng,Wei Luo,Ming Li,Su Wang

DOI: https://doi.org/10.1109/ICSJ.2013.6756081

2013-01-01

Abstract:Through silicon via (TSV) with many advantages comparing with traditional technology is playing an important role in three-dimensional large-scale integration. In this paper, we have studied Effect of leveler on microstructure and stress of electroplated copper for TSV application. We demonstrate residual stress, SEM, TEM and electrochemistry results which have strong connection with leveler in via copper electroplating solution.
Copper Fill of Microvia Using a Thiol-Modified Cu Seed Layer and Various Levelers

Wei-Ping Dow,Chih-Chan Li,Meng-Wen Lin,Ging-Wen Su,Chen-Chia Huang

DOI: https://doi.org/10.1149/1.3147273

IF: 3.9

2009-01-01

Journal of The Electrochemical Society

Abstract:Microvia filling by copper electroplating was carried out using a plating bath containing a suppressor and a leveler without an accelerator. The required accelerator was adsorbed onto the copper seed layer of the microvia in a predipping bath before the filling plating. This pretreatment is similar to the self-assembled monolayer of thiol molecules that forms on a copper surface. The suppressor was poly(ethylene glycol) (PEG), and five levelers, namely, Janus green B, diazine black, methylene violet, safranine O, and Alcian blue, were employed to screen for the best plating formula suitable for a plating process in which no accelerator was present in the plating solution. The thiol molecule employed in this work was 3-mercapto-1-propanesulfonate (MPS). The electrochemical behaviors of various plating formulas were characterized using a galvanostatic measurement on a copper electrode at different rotating speeds. Results indicated that the MPS adlayer is transferable onto the surface of the copper deposit and can be displaced by the PEG–Cl–leveler. The displacement rate depends on the molecular structure of the added leveler. This plating process has the potential to greatly reduce the plating time of microvia filling.

electrochemistry,materials science, coatings & films
Pretreatment to Assure the Copper Filling in Through-Silicon Vias

Wei Luo,Junhong Zhang,Yi Li,Liming Gao,Ming Li

DOI: https://doi.org/10.1007/s10854-016-4723-y

2016-01-01

Journal of Materials Science Materials in Electronics

Abstract:Copper seed layer repair and pre-wetting are standard operation procedures (SOPs) for copper filling with void-free, through-silicon vias (TSVs). In this paper, a novel pretreatment with pre-wetting and cleaning is investigated based on the results of copper filling in via when copper oxide is present on the surface of the seed layer. The pre-wetting and cleaning are integrated into one step in the pretreatment. Basic Electrolyte Solution (BES) is chosen to be pre-wetting acidic liquid. A copper seed layer formed on a wafer by sputter deposition was put into chamber to grow native copper oxide. To investigate the damage of the pretreatment, the corrosive rate of BES was measured by cathodic chronopotentiograms. The results show that BES can clean the copper oxide on the surface of the seed layer without corroding the copper seed layer. The combined pre-wetting and cleaning, pretreatment simplifies the SOP, especially for copper oxide on the seed layer. The conclusions drawn from the experimental results were employed in TSVs. Furthermore, there is one essential requirement for the pretreatment: the thickness of the copper seed layer must be more than 5 nm after the copper is oxidized on the surface of the seed layer.
Fast Filling of Microvia by Pre-Settling Particles and Following Cu Electroplating

Ganglong Li,Zhiyi Li,Junjie Li,Houya Wu

DOI: https://doi.org/10.3390/nano12101699

IF: 5.3

2022-05-16

Nanomaterials

Abstract:Microvia interconnectors are a critical element of 3D packaging technology, as they provide the shortest interconnection path between stacked chips. However, low efficiency of microvia filling is a long-standing problem. This study proposed a two-step method to enhance the electroplating filling efficiency by pre-setting metal particles in microvias and later electroplating the Cu to fill the gaps among the pre-settled particles. Since these particles occupy a certain volume in the microvia, less electroplating Cu is needed for microvia filling, leading to a shorter electroplating period.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry
Copper electroplating technology for microvia filling

Mark Lefebvre,George Allardyce,Masaru Seita,Hideki Tsuchida,Masaru Kusaka,Shinjiro Hayashi

DOI: https://doi.org/10.1108/03056120310454943

2003-06-01

Circuit World

Abstract:This paper describes a copper electroplating enabling technology for filling microvias. Driven by the need for faster, smaller and higher performance communication and electronic devices, sequential build up (SBU) technology has been adopted as a viable multilayer printed circuit manufacturing technology. Increased wiring density, reduced line widths, smaller through‐holes and microvias are all attributes of these high density interconnect (HDI) packages. Filling the microvias with conductive material allows the use of stacked vias and via in pad designs. Other potential design attributes include thermal management enhancement and benefits for high frequency circuitry. Electrodeposited copper can be utilized for filling microvias and provides potential advantages over alternative via plugging techniques. The features, development, scale up and results of direct current (DC) and periodic pulse reverse (PPR) acid copper via filling processes, including chemistry and equipment, are described.

engineering, electrical & electronic,materials science, multidisciplinary
Electrochemical Analysis of Cathode in TSV Copper Electroplating

Haiyong Cao,Xue Feng,Qi Sun,Wei Luo,Huiqin Ling,Jiangyan Sun,Ming Li

DOI: https://doi.org/10.1109/icsj.2012.6523399

2012-01-01

Abstract:In TSV copper electroplating, the most important is to form the “bottom up” deposition. In order to achieve this kind of super-filling, additive in the electroplating bath need to play its own role at the respective position. Accelerator adsorb at the bottom of the via to accelerate the deposition of copper while suppressor mostly adsorb at the top of the via to inhibit the deposition. Therefore, vias could be supper-filled without any void. In this paper, bis(3-sulfopropyl) disulfide (SPS) and polyethylene glycol (PEG) were used as accelerator and suppressor respectively. The supper-filling mechanism and the competitive adsorption of SPS and PEG were being researched by means of linear sweep voltammetry (LSV) and cyclic voltammogram (CV). The electrochemical analysis and the experimental plating are closely related.
Study of microvia filling process based on multi-physical coupling

Linxian Ji,Hexian Nie,Shidong Su,Yuanming Chen,Wei He,Kehua Ai

DOI: https://doi.org/10.1080/00202967.2018.1426174

2018-02-27

Transactions of the IMF

Abstract:The microvia filling process used in the high-density interconnect printed circuit board manufacturing industry was investigated by multi-physical coupling technology. To achieve a perfect filling, SPS (bis-(sodium-sulphopropyl)-disulphide), EO/PO (ethylene oxide and propylene oxide block co-polymers) and PEOPI (polyethylene oxide-polyimide) were used. Furthermore, electrochemical behaviours of electrodeposition were investigated by cyclic voltammetry, galvanostatic potential transient measurement and dynamic potential polarisation technology. Through numerical simulation, the relationship between coverage of additive, concentration of additive, rotating speed of rotating disc electrode, exchange current density and curve slope was fitted. Based on multi-physical coupling to copper electrodeposition, a mathematical model of microvia filling was built to simulate the filling process by a finite element method, and a systematic analysis of the whole filling process was carried out. The void-free microvia filling and filling process with different shapes were finally achieved in acid copper electroplating solutions consisting of 0.3 M CuSO4·5H2O, 0.2 M H2SO4 and 80 mg L−1 Cl− (virgin make-up solution) plus additives SPS, EO/PO and PEOPI. Subsequently, from images of the microvia filling experiment at different times, shape evolution of the microvia filling and variation of electrodeposition rate at the bottom of the microvia and surface were analysed. The modelling result was compared with the measured data and showed good agreement with the experiment. The results showed that a process model was an excellent tool for quickly and cheaply studying the process behaviour greatly reduced need to execute time-consuming and costly experiments.
A Green and Facile Microvia Filling Method via Printing and Sintering of Cu-Ag Core-Shell Nano-Microparticles

Guannan Yang,Shaogen Luo,Tao Lai,Haiqi Lai,Bo Luo,Zebo Li,Yu Zhang,Chengqiang Cui

DOI: https://doi.org/10.3390/nano12071063

IF: 5.3

2022-03-24

Nanomaterials

Abstract:In this work, we developed an eco-friendly and facile microvia filling method by using printing and sintering of Cu-Ag core-shell nano-microparticles (Cu@Ag NMPs). Through a chemical reduction reaction in a modified silver ammonia solution with L-His complexing agent, Cu@Ag NMPs with compact and uniform Ag shells, excellent sphericity and oxidation resistance were synthesized. The as-synthesized Cu@Ag NMPs show superior microvia filling properties to Cu nanoparticles (NPs), Ag NPs, and Cu NMPs. By developing a dense refill method, the porosity of the sintered particles within the microvias was significantly reduced from ~30% to ~10%, and the electrical conductivity is increased about twenty-fold. Combing the Cu@Ag NMPs and the dense refill method, the microvias could obtain resistivities as low as 7.0 and 6.3 μΩ·cm under the sintering temperatures of 220 °C and 260 °C, respectively. The material and method in this study possess great potentials in advanced electronic applications.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry
Deep Silicon Macropores Filled with Copper by Electrodeposition

Cheng Fang,Eugen Foca,Sufan Xu,Juergen Carstensen,Helmut Foell

DOI: https://doi.org/10.1149/1.2393090

IF: 3.9

2007-01-01

Journal of The Electrochemical Society

Abstract:Deep macropores in n-type Si have been completely filled with copper (Cu). Homogeneous metal deposition inside the deep pores was achieved by means of electroplating using a solution containing only Cu2SO4 mixed with H2SO4 and no additives. Initial nucleation of the Cu deposition was confined to the bottom of the pores and, by optimizing the filling conditions, uniform filling from the bottom to the top could be achieved. Macropores as deep as 150 mu m with diameters in the 2 mu m range could be filled with Cu, without encountering the so-called "bottleneck" effect. (c) 2006 The Electrochemical Society.
Optimizing Copper Filling Process For Through Silicon Via (TSV)

CAI Jian,WANG Dejun,WANG Qian,WEI Tiwei

DOI: https://doi.org/10.3969/j.issn.1004-4507.2012.10.003

2012-01-01

Abstract:Copper filling for 40 μm Through Silicon Via(TSV) had been investigated in this paper.Fully filled TSV with diameter of 40 μm,depth of 180 μm had been achieved by fine-tuning parameters of the electroplating process.Effect of current density on copper filling was studied at the condition where seed layer deposition and plating solution were kept constant.The optimized current density was found to be 1 ASD.Then various pretreatment processes of electroplating,such as ultrasonic cleaning,deionized water flushing and vacuuming had been analyzed in detail with the same current density.Comparison experiments showed vacuuming pretreatment method resulted in good copper filling,because voids in silicon via could be removed effectively by this approach.By adopting vacuuming pretreatment and applying the current density of 1 ASD,copper filling ratio is close to 100%.
Parametric study of electroplating-based via-filling process for TSV applications

K. Y.K. TSUI,S.K. YAU,V.C.K. LEUNG,P. SUN,D.X. Q. SHI,K. Y. K. Tsui,S. K. Yau,V. C. K. Leung,P. Sun,D. X. Q. Shi

DOI: https://doi.org/10.1109/icept.2009.5270801

2009-08-01

Abstract:In this study, the effects of different influence factors on electroplating-based via-filling process were studied in a systematic manner. A through-silicon-via (TSV) chip was firstly designed, the chip size was $16\times 10{\rm mm}^{2}$ with the TSV interconnects. The via was in diameter of $50\mu {\rm m}$ and depth of $75\mu {\rm m}$. The deep reactive ion etching (DRIE) technique was employed to fabricate the vias onto the silicon wafer. In order to fill up the vias by using the electroplating process, the ${\rm SiO}_{2}$ isolation layer was firstly prepared onto the sidewall and the defined surface of the wafer using the plasma enhanced chemical vapor deposition (PECVD) technique, the TiW barrier layer was prepared onto the ${\rm SiO}_{2}$ layer with the sputtering process, the Cu seed layer was then deposited onto the barrier layer by the sputtering process to provide a foundation for copper growth during electroplated deposition. To achieve the “bottom-up” via-filling, the addictives were added into the copper plating solution. The results showed that the void free Cu filling can be achieved with an optimal additives ratio. The variation in both via opening and depth were found to be key factors influencing the via-filling quality. The process parameters such as current density, power waveform and so on were found to affect the vial filling quality. A comparison on the effects of key process parameters was made, showing that the current density, voltage waveform, and pulse reserve are three key parameters that affect the filling quality more than other parameters.
Copper Filling Process for Small Diameter, High Aspect Ratio Through Silicon Via (Tsv)

Tiwei Wei,Jian Cai,Qian Wang,Ziyu Liu,Yinan Li,Tao Wang,Dejun Wang

DOI: https://doi.org/10.1109/icept-hdp.2012.6474664

2012-01-01

Abstract:3D Integration is a good solution for extending Moore's momentum in the next decennium. Through Silicon Via (TSV) is an alternative interconnect technology for higher performance system integration with vertical stacking of chips in package. Due to high demands of chip miniaturization, small diameter TSV with high aspect ratio has become particularly important. This paper focuses on Cu electroplating via filling of small diameter, high aspect ratio TSV. Samples of different via diameters under various current densities are fabricated and analyzed in lab. In addition, exhaust and pre-wetting procedures are also introduced after a series of contrast experiments, robust copper filling result for small diameter (4μm ~ 6μm) TSVs with high aspect ratio up to 6:1 has been successfully realized. Based on the good copper filling result, a testing vehicle structure of 3D integration is fabricated.
Electrochemical and analytical study of electroplating additive in copper plating solution for microvia filling

Zhihua Tao,Guanting Liu,Yuanxun Li,Hua Su

DOI: https://doi.org/10.1108/cw-07-2018-0052

2019-08-05

Circuit World

Abstract:Purpose The adsorption and acceleration behavior of 3-mercaptopropyl sulfonate (MPS) were investigated by electrochemical tests for microvia filling by copper electroplating. Design/methodology/approach The synergistic effects of one suppressor of propylene oxide ethylene oxide propylene oxide named PEP and MPS as the accelerator during copper electroplating were also investigated by electrochemical methods such as electrochemical impedance spectroscopy cyclic voltammetric stripping (CVS) and Galvanostatic measurements (GMs). Findings The research results suggest that the adsorption of MPS onto the Cu-RDE metal surface was a spontaneous process and the adsorbing of MPS on cathode was proposed to physical-chemistry adsorption in the plating formula. There was no potential difference (i.e. ?? = 0) of GMs until MPS was injected into the plating solution suggest that copper deposition is not diffusion-controlled in the presence of PEP–Cl–JGB. Originality/value A new composition of plating bath was found to be effective to perform bottom-up copper filling of microvias in the fabrication of PCB in electronic industries. The adsorption of MPS into the Cu-RDE metal surface was a spontaneous process and the adsorbing of MPS on cathode was studied by EIS and the results proposed to physical-chemistry adsorption in the plating formula. An optimal plating solution composed of CuSO4, H2SO4, chloride ions, PEP, MPS and JGB was obtained, and the microvia could be fully filled using the plating formula.

engineering, electrical & electronic,materials science, multidisciplinary
Understanding Effect of Additives in Copper Electroplating Filling for Through Silicon Via

Miao Min,Zhu Yunhui,Bian Yuan,Sun Xin,Ma Shenglin,Cui Qinghu,Zhong Xiao,Fang Runiu,Chen Jing,Jin Yufeng

DOI: https://doi.org/10.1109/icsict.2012.6467713

2012-01-01

Abstract:3D integration with TSVs (Through Silicon Via) is emerging as a promising technology for the next generation integrated circuits. Copper electroplating is one of the key technologies to fabricate TSVs. In this paper, void-free TSV filling was achieved using methanesulfonic based electrolyte and mushroom-like copper overburden was used as bumps after tin deposition. Effect of additives and current density in copper electroplating nucleation and filling profile was investigated. An absorption-diffusion model was employed to explain the experimental results.
Influence of Convection-Dependent Adsorption of Additives on Microvia Filling by Copper Electroplating

Wei-Ping Dow,Her-Shu Huang,Ming-Yao Yen,Hsiao-Chun Huang

DOI: https://doi.org/10.1149/1.1901670

IF: 3.9

2005-01-01

Journal of The Electrochemical Society

Abstract:Influences of forced convection during acid copper electroplating on microvia fill of printed circuit boards were studied. The plating formula was composed of polyethylene glycol (PEG), chloride ion, 3-mercapto-1-propanesulfonate, and Janus green B (JGB). The filling performances under various plating conditions were examined with scanning electron microscopy and optical microscopy. Chemical and physical interactions between these additives and fluid dynamics were characterized by cyclic linear sweep voltammetry, steady-state current-potential measurements, linear sweep voltammetry, and galvanostatic measurements using different rotation speeds of working electrode. Experimental results indicated that the potential-dependent adsorption of chloride ion on the copper surface determined and governed the electrochemical effect of these organic additives on the cathode, resulting in a convection-dependent adsorption of inhibiting reagents and an asymmetrical fill of copper deposit in the microvias. A synergistic inhibition effect on the copper deposition caused by a composite suppressor composed of PEG, Cu+ , Cl− , and JGB was demonstrated. The dominance of the competitive adsorption between the accelerator and the composite suppressor was shown to depend significantly on the chloride ion concentration and on the forced convection.

electrochemistry,materials science, coatings & films
Fast copper plating process for TSV fill

Yun Zhang,Thomas Richardson,Stream Chung,Chen Wang,Bioh Kim,Christian Rietmann

DOI: https://doi.org/10.1109/impact.2007.4433603

2007-01-01

Abstract:In next generation IC packaging, 3D interconnect has been considered to be the solution not only for footprint shrinkage, but also for integration of different functional devices into one package. The heart of 3D silicon-based technology is Cu filled vias which allow shortest chip-to-chip interconnections. The technology of choice today to make these Cu vias is by electroplating. Even though electroplating Cu for interconnects is a well known technology owing to its wide use in Cu damascene, it proves to be quite a different ball game for through silicon via fill, where via diameter changes from nm to tens of microns and via depth changes from sub microns to hundreds of microns. What we have learned from Cu damascene and what works there could not be applied directly to through silicon via fill. In this paper, we will describe the main hurdles to overcome in achieving a perfect, defect-free fill with minimum overburden and the methodologies to reduce the fill time.

Microvia Filling by Copper Electroplating over SPS Self-Assembly Monolayer on Au and Cu Seed Layers

Microvia Filling by Cu Electroplating Over a Au Seed Layer Modified by a Disulfide

Study on the behaviors of Cu filling in special through-silicon-vias by the simulation of electric field distribution

Wetting Process of Copper Filling in Through Silicon Vias

Influence of Electroplating Current Density on Through Silicon Via Filling

Effect of leveler on microstructure and stress of electroplated copper for TSV application

Copper Fill of Microvia Using a Thiol-Modified Cu Seed Layer and Various Levelers

Pretreatment to Assure the Copper Filling in Through-Silicon Vias

Fast Filling of Microvia by Pre-Settling Particles and Following Cu Electroplating

Copper electroplating technology for microvia filling

Electrochemical Analysis of Cathode in TSV Copper Electroplating

Study of microvia filling process based on multi-physical coupling

A Green and Facile Microvia Filling Method via Printing and Sintering of Cu-Ag Core-Shell Nano-Microparticles

Deep Silicon Macropores Filled with Copper by Electrodeposition

Optimizing Copper Filling Process For Through Silicon Via (TSV)

Parametric study of electroplating-based via-filling process for TSV applications

Copper Filling Process for Small Diameter, High Aspect Ratio Through Silicon Via (Tsv)

Electrochemical and analytical study of electroplating additive in copper plating solution for microvia filling

Understanding Effect of Additives in Copper Electroplating Filling for Through Silicon Via

Influence of Convection-Dependent Adsorption of Additives on Microvia Filling by Copper Electroplating

Fast copper plating process for TSV fill