Microstructural, Optical, and Electrical Properties of Chemically Deposited Tin Antimony Sulfide Thin Films for Use in Optoelectronic Devices

Patrick Akata Nwofe,Mutsumi Sugiyama
DOI: https://doi.org/10.1002/pssa.201900881
2020-03-13
physica status solidi (a)
Abstract:<p>The influence of different tin‐amount on the properties of chemically deposited tin antimony sulphide (TAS) thin films was explored, to establish their suitability in thin film solar cell devices. X‐ray diffraction studies reveal single phase without presence of other binaries. Energy dispersive X‐ray spectroscopy (EDS) indicated Sn‐rich behaviour which was confirmed by XPS spectroscopy analysis. The crystallite size was between 28.4 nm to 40.5 nm, typically exhibiting an increase up to 0.012 mol of the Sn‐amount and then decreased marginally. Scanning electron microscopy (SEM) give micrographs of leaf‐like structures. The transmittances decreased with increasing tin‐amount, the optical absorption coefficient was &gt; 10<sup>4</sup>cm<sup>−1</sup>, the energy bandgap was direct, and varied in the range 1.22 eV to 1.50 eV. The refractive index lies between 2.51 to 4.11 while the dielectric constants ranged from 7.49 to 20.1. The carrier mobility was between 18.5 cm<sup>2</sup>/Vs to 46.8 cm<sup>2</sup>/Vs. The bulk resistivity was found to vary between 5.71 x10<sup>4</sup> Ωcm to 1.47 × 10<sup>5</sup> Ωcm, with lower values obtained at ≥ 0.012 mol of the Sn‐amount. Hall effect measurements indicated that the TAS thin films possess p‐type electrical conductivity. These values fulfil excellent absorber layer requirements in thin film solar cell devices.</p><p>This article is protected by copyright. All rights reserved.</p>
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