TFT Technology: Advancements and Opportunities for Improvement

John F. Wager

DOI: https://doi.org/10.1002/msid.1098

2020-03-01

Information Display

Abstract:For flat‐panel display backplane applications, oxide TFT technology has transitioned from a disruptive challenger to a maturing competitor with respect to a‐Si:H and LTPS. Here, we explore the most recent developments and the best options among the offerings.

What problem does this paper attempt to address?

Prospects of oxide TFTs approaching LTPS

P. Yun,J. Bae,Saeroonter Oh,I. Kang,K. Park

DOI: https://doi.org/10.1109/AM-FPD.2015.7173254

2015-07-01

Abstract:Oxide TFTs are becoming the mainstream backplane technology for high-resolution large screen displays, while LTPS TFTs are mostly used for high-end portable smart devices. Recent developments in oxide TFTs show high mobility exceeding 50 cm2/V·s, good stability characteristics comparable to LTPS, and integration on plastic substrates for a large range of flexible applications. With these technological advances, oxide TFTs can become a universal backplane solution for LCD and OLED displays.

Materials Science,Engineering,Physics
Strategies for Applications of Oxide-Based Thin Film Transistors

Lirong Zhang,Huaming Yu,Wenping Xiao,Chun Liu,Junrong Chen,Manlan Guo,Huayu Gao,Baiquan Liu,Weijing Wu

DOI: https://doi.org/10.3390/electronics11060960

IF: 2.9

2022-03-20

Electronics

Abstract:Due to the untiring efforts of scientists and researchers on oxide semiconductor materials, processes, and devices, the applications for oxide-based thin film transistors (TFTs) have been researched and promoted on a large scale. With the advantages of relatively high carrier mobility, low off-current, good process compatibility, optical transparency, low cost, and especially flexibility, oxide-based TFTs have already been adapted for not only displays (e.g., liquid crystal display (LCD), organic light emitting diode (OLED), micro-light-emitting diode (Micro-LED), virtual reality/augmented reality (VR/AR) and electronic paper displays (EPD)) but also large-area electronics, analog circuits, and digital circuits. Furthermore, as the requirement of TFT technology increases, low temperature poly-silicon and oxide (LTPO) TFTs, which combine p-type LTPS and n-type oxide TFT on the same substrate, have drawn further interest for realizing the hybrid complementary metal oxide semiconductor (CMOS) circuit. This invited review provides the current progress on applications of oxide-based TFTs. Typical device configurations of TFTs are first described. Then, the strategies to apply oxide-based TFTs for improving the display quality with different compensation technologies and obtaining higher performance integrated circuits are highlighted. Finally, an outlook for the future development of oxide-based TFTs is given.

engineering, electrical & electronic,computer science, information systems,physics, applied
1.1: Invited Paper: TFT Backplane for Display

Han-Ping D. Shieh

DOI: https://doi.org/10.1002/sdtp.12621

2018-04-01

SID Symposium Digest of Technical Papers

Abstract:Thin Film Transistors (TFT) are being widely used as backplane to drive display components, such as LCD, OLED, and even u‐LCD. A‐Si, poly Si, oxide, and organic are common materials for TFT. Mobility, scale‐up and long term stability are among the key concern for TFT. Vertical channel thin film transistors (VTFTs) are proposed as an effective approach to reduce driving voltage and power consumption for achieving high speed and high resolution displays. Considering that oxide semiconductors have large‐area compatible processes, it will be better to find a method for achieving low driving voltages with conventional optical lithography machines used for large area display panels. In this talk, we will review the state of art of the vertical TFTs and explore the major fabrication issues. In addition, we will examine amorphous indium gallium zinc oxide (a‐IGZO) vertical channel TFT fabricated at low temperature to evaluate the impact of gate dielectric on electric characteristics of the vertical vis‐à‐vis planar TFTs. VTFTs employing vertical amorphous a‐IGZO channel of 500 nm have been fabricated without additional photolithography process. The various issues related to the improved device performance will be addressed. Solution based organic TFT will also be examined to explore its feasibility for backplane to drive display and other components.
Flexible Thin-Film Transistor and Integration Strategies for Future Intelligent Displays

Yuqing Zhang,Xu Wang,Sixin Zhang,Chunxiu Wang,Min Zhang

DOI: https://doi.org/10.1109/ojid.2024.3454559

2024-01-01

Abstract:Future flexible intelligent displays are driving demands for greater flexibility, higher resolution, faster refresh rates, and enhanced functionality. This review mainly focuses on recent advances and ongoing challenges in flexible thin-film transistors (TFTs) based on low-temperature polycrystalline silicon (LTPS), amorphous oxide semiconductor (AOS), and low-temperature polysilicon and oxide (LTPO) for flexible backplane technologies. Furthermore, the developments of process and function integration techniques, including device scaling, device stacking, as well as functional circuits and applications, are discussed from the perspective of innovation and significance. Besides, the integration of intelligent systems is briefly introduced, emphasizing the role of synaptic transistors, including metal oxide and carbon nanotube-based ones, in real-time data processing and sensing functions. By providing insights into the status and future directions, this review provides a comprehensive perspective and discussion on the development of next-generation flexible intelligent display technologies.
TFT Channel Materials for Display Applications: From Amorphous Silicon to Transition Metal Dichalcogenides

Gi Woong Shim,Woonggi Hong,Jun‐Hwe Cha,Jung Hwan Park,Keon Jae Lee,Sung‐Yool Choi

DOI: https://doi.org/10.1002/adma.201907166

IF: 29.4

2020-03-16

Advanced Materials

Abstract:<p>As the need for super‐high‐resolution displays with various form factors has increased, it has become necessary to produce high‐performance thin‐film transistors (TFTs) that enable faster switching and higher current driving of each pixel in the display. Over the past few decades, hydrogenated amorphous silicon (a‐Si:H) has been widely utilized as a TFT channel material. More recently, to meet the requirement of new types of displays such as organic light‐emitting diode displays, and also to overcome the performance and reliability issues of a‐Si:H, low‐temperature polycrystalline silicon and amorphous oxide semiconductors have partly replaced a‐Si:H channel materials. Basic material properties and device structures of TFTs in commercial displays are explored, and then the potential of atomically thin layered transition metal dichalcogenides as next‐generation channel materials is discussed.</p>

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Innovations in thin‐film electronics for the new generation of displays

Andre Zeumault,Jose E. Mendez,John Brewer

DOI: https://doi.org/10.1002/jsid.1274

2024-03-27

Journal of the Society for Information Display

Abstract:Two innovations in thin‐film devices promise improved image quality and power consumption for flat panel displays: amorphous metal gate thin‐film transistors (AMeTFTs) and amorphous metal nonlinear resistors (AMNRs). Sharing a mass‐producible thin‐film amorphous metal, these innovations create near‐ and long‐term roadmaps simplifying the production of "fast, flexible, and simple" high‐image quality, low‐power consumption displays on glass and plastic. Today's display industry faces transistor‐level challenges similar to those of complementary metal‐oxide semiconductor (CMOS) metal‐oxide semiconductor field‐effect transistors (MOSFETs) in the mid‐1990s. Learnings from MOSFETs inform the display industry's response to the limitations of silicon‐based thin‐film transistors (TFTs). Improvements sustaining Moore's Law drove the need to rethink MOSFET materials and structures. The display industry needs fundamental innovation at the device level. New thin‐film devices enable an inflection point in the use of displays, just as fin field‐effect transistor (FinFET) defined the inflection point in CMOS in the 2000s. This paper outlines two innovations in thin‐film device technology that offers improvement in image quality and power consumption of flat panel displays: amorphous metal gate TFTs (AMeTFTs) and amorphous metal nonlinear resistors (AMNRs). Linked through a single core material set based on mass‐producible, thin‐film amorphous metals, these two innovations create near‐ and long‐term roadmaps simplifying the production of high‐image quality, low‐power consumption displays on glass (now) and plastic (future). In particular, the field‐effect mobility of indium gallium zinc oxide (IGZO) AMeTFTs (55–72 cm2/Vs) exceeds that of IGZO TFTs developed by existing display manufacturers without the need for atomic layer deposition or vertical stacking of heterostructure semiconductor films, making AMeTFTs a natural choice for the new G8.5–G8.7 fabs targeting IGZO backplanes.

engineering, electrical & electronic,materials science, multidisciplinary,optics,physics, applied
48‐4: LTPO Technology Development for Enhanced Display Performance: Image Sticking Phenomena, Circuit Operation and Backplane Process Integration

Daeyoun Cho,Jiho Moon,T.-Y. Kihm,Y.-T. Choi,Jongwoo Park

DOI: https://doi.org/10.1002/sdtp.15564

2022-06-01

SID Symposium Digest of Technical Papers

Abstract:This paper details the low temperature poly‐crystalline silicon oxide (LTPO) thin‐film transistor (TFT) technology development primarily focused on image sticking (IS) and recovery behaviors, the backplane process optimization, which is painstaking multi‐faceted approach from TFT to panel to circuit, in order to ensure display performance and reliability. Palpable understanding on light induced IS and recovery, the dependency of bias layout design and backplane process integration are crucial.
The status and perspectives of metal oxide thin-film transistors for active matrix flexible displays

Jae Kyeong Jeong

DOI: https://doi.org/10.1088/0268-1242/26/3/034008

IF: 2.048

2011-02-14

Semiconductor Science and Technology

Abstract:The purpose of this paper is to give an overview of the state-of-the-art of metal oxide thin-film transistors (TFTs). First, the question of how to achieve high-performance oxide TFTs is addressed, including the exploration of new channel materials, the realization of low-resistance ohmic contacts and the implementation of high-k dielectric materials as the gate insulator. The electrical instability of the oxide TFTs is also discussed, which is critical for their application in flexible backplane electronics: special attention is given to the understanding of the degradation mechanism of oxide TFTs against bias thermal stress (BTS) and light illuminated BTS. Finally, the recent application of oxide TFTs in active matrix displays, such as electronic paper, liquid crystal displays and organic light-emitting diodes, is addressed.

engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter
Flexible a-IGZO TFT Technology: New Developments & Applications

Auke Jisk Kronemeijer,Ilias Katsouras,Paul Poodt,Hylke Akkerman,Albert Van Breemen,Gerwin Gelinck

DOI: https://doi.org/10.23919/am-fpd.2018.8437444

2018-07-01

Abstract:We present recent developments on flexible a-IGZO TFT technology scaling in terms of TFT channel length and operating voltage, as well as manufacturing cost optimization with a focus on R2R processing compatibility. We present progress on the relevant technology building blocks; (i) R2R compatible TFT architecture, (ii) (multilevel) nanoimprint lithography and (iii) S-ALD deposited TFT materials. Additionally, we show a developing application that drives scaling of the technology, namely a monolithically integrated flexible AMOLED display with in-display fingerprint detection.
Reliability issues of amorphous oxide semiconductor-based thin film transistors

Yuxuan Shen,Meng Zhang,Siyuan He,Le Bian,Jiaxin Liu,Zhengyu Chen,Shuangmei Xue,Ye Zhou,Yan Yan

DOI: https://doi.org/10.1039/d4tc01392a

IF: 6.4

2024-09-04

Journal of Materials Chemistry C

Abstract:Amorphous oxide semiconductors (AOSs) are non-crystalline compounds composed of metal elements and oxygen elements, possessing distinctive electrical properties. Even in their amorphous state, these materials exhibit favourable carrier transport paths and demonstrate high mobilities. Thin-film transistors (TFTs), as the core devices in active matrix drive systems, have found commercial success in active matrix liquid crystal displays and active matrix organic light-emitting diode displays. Among the choices of active layer materials for TFTs, AOSs have emerged as a potent alternative to traditional Si-based semiconductors, offering irreplaceable advantages in large-area high-definition flat-panel displays. Currently, the reliability concerns regarding AOS TFTs have garnered increasing attention, yet reports on this topic are scattered. Therefore, a comprehensive overview of the aspects is necessary to facilitate further progress in this field. With next-generation display technologies demanding large-area, high-resolution, and high-refresh-rate displays, alongside the challenges presented by future flexible display technologies in coping with complex working scenarios such as bending and stretching, the significance of this research is unmistakable. Critical directions for future research are proposed in an updated, top-tier roadmap to galvanize progress towards AOS TFTs within the community.

materials science, multidisciplinary,physics, applied
Thin Film Transistor Array Based Active Matrix Flat Panel Displays—Past and Next Application in Immersive Displays

Yue Kuo

DOI: https://doi.org/10.1109/OJID.2024.3350604

Abstract:The availability of high-quality flat panel displays today can be contributed to the advancement of the thin film transistor technology that enables the tight-control of the transmission, emission, or reflection of light from individual pixels in a large array. The development history of amorphous silicon, polycrystalline silicon, and metal oxide thin film transistors for commercial liquid crystal, organic light emitting device, micro-light emitting device, and electrophoretic displays are reviewed. Characteristics of these transistors are compared and limitations on applications are discussed. The trend of market growth of these displays is examined. Examples of the thin film transistor array in non-display products are shown. The advancement in two thin film transistor active matrix areas − flexible displays/electronics and smart display systems − have been identified and discussed as critical to the emerging high performance immersive displays.

Materials Science,Engineering,Physics
Overview of electroceramic materials for oxide semiconductor thin film transistors

Jin-Seong Park,H. Kim,Il-Doo Kim

DOI: https://doi.org/10.1007/s10832-013-9858-0

2013-09-24

Journal of Electroceramics

Abstract:The flat panel display (FPD) market has been experiencing a rapid transition from liquid crystal (LC) to organic light emitting diode (OLED) displays, leading, in turn, to the accelerated commercialization of OLED televisions already in 2013. The major driving force for this rapid change was the adaptation of novel oxide semiconductor materials as the active channel layer in thin film transistors (TFTs). Since the report of amorphous-InGaZnO (a-IGZO) semiconductor materials in 2004, the FPD industry has accelerated the development of oxide TFTs for mass-production. In this review, we focus on recent progress in applying electro-ceramic materials for oxide-semiconductor thin-film-transistors. First, oxide-based semiconductor materials, distinguished by vacuum or solution processing, are discussed, with efforts to develop high-performance, cost-effective devices reviewed in chronological order. The introduction and role of high dielectric constant - reduced leakage gate insulators, in optimizing oxide-semiconductor device performance, are next covered. We conclude by discussing current issues impacting oxide-semiconductor TFTs, such as field effect mobility and device stability and the proposed directions being taken to address them.

materials science, ceramics
Printable Semiconductors for Backplane TFTs of Flexible OLED Displays

Huihui Zhu,Eun‐Sol Shin,Ao Liu,Dongseob Ji,Yong Xu,Yong‐Young Noh

DOI: https://doi.org/10.1002/adfm.201904588

IF: 19

2019-08-28

Advanced Functional Materials

Abstract:<p>Studies on printable semiconductors and technologies have increased rapidly over recent decades, pioneering novel applications in many fields, such as energy, sensing, logic circuits, and information displays. The newest display technologies are already turning to metal oxide semiconductors, i.e., indium gallium zinc oxide, for the improvements needed to drive active matrix organic light‐emitting diodes. Convenience and portability will be realized with flexible and wearable displays in the future. This report summarizes recent progress on the development of solution‐processed thin film transistors, especially those deposited at low temperatures for next‐generation flexible smart displays. The first part provides an overview on the history and current status of displays. Then, recent advances in state‐of‐the‐art solution‐processed transistors based on different semiconductors are presented, including metal oxides, organic materials, perovskites, and carbon nanotubes. Finally, conclusions are drawn and the remaining challenges and future perspectives are discussed.</p>

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
36.1: Invited Paper: Innovations in Thin Film Electronics for the New Generation of Displays

John Brewer

DOI: https://doi.org/10.1002/sdtp.16268

2023-04-01

SID Symposium Digest of Technical Papers

Abstract:Improvements in semiconductor materials carried Moore's Law into the 1990s, where device geometries and limits in materials performance drove the need for fundamental innovation at the materials and structural levels of MOSFETs. The display industry has reached a similar point the need for fundamental innovation at the materials and structural levels of thin film transistors. Successful transition to a higher plateau of thin film device technology enables a new inflection point in the use of displays just as the FinFET was the foundation for an inflection point in the use of microprocessors. This paper provides an overview of two thin film technology innovations offering promise as the next two plateaus in the evolution of thin film integrated circuit manufacturing: achieving bulk accumulation in single gate metal oxide semiconductor thin film transistors, and semiconductor less quantum tunneling. Linked through a single core materials set based on strong yet flexible amorphous metals, these two innovations create a roadmap simplifying the manufacturing of high image quality, low power consumption displays on glass and plastic.
Research Progress of p-Type Oxide Thin-Film Transistors

Zhuping Ouyang,Wanxia Wang,Mingjiang Dai,Baicheng Zhang,Jianhong Gong,Mingchen Li,Lihao Qin,Hui Sun

DOI: https://doi.org/10.3390/ma15144781

IF: 3.4

2022-07-09

Materials

Abstract:The development of transparent electronics has advanced metal–oxide–semiconductor Thin-Film transistor (TFT) technology. In the field of flat-panel displays, as basic units, TFTs play an important role in achieving high speed, brightness, and screen contrast ratio to display information by controlling liquid crystal pixel dots. Oxide TFTs have gradually replaced silicon-based TFTs owing to their field-effect mobility, stability, and responsiveness. In the market, n-type oxide TFTs have been widely used, and their preparation methods have been gradually refined; however, p-Type oxide TFTs with the same properties are difficult to obtain. Fabricating p-Type oxide TFTs with the same performance as n-type oxide TFTs can ensure more energy-efficient complementary electronics and better transparent display applications. This paper summarizes the basic understanding of the structure and performance of the p-Type oxide TFTs, expounding the research progress and challenges of oxide transistors. The microstructures of the three types of p-Type oxides and significant efforts to improve the performance of oxide TFTs are highlighted. Finally, the latest progress and prospects of oxide TFTs based on p-Type oxide semiconductors and other p-Type semiconductor electronic devices are discussed.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,metallurgy & metallurgical engineering
Review of recent developments in amorphous oxide semiconductor thin-film transistor devices

Joon Seok Park,Wan-Joo Maeng,Hyun-Suk Kim,Jin-Seong Park

DOI: https://doi.org/10.1016/j.tsf.2011.07.018

IF: 2.1

2012-01-01

Thin Solid Films

Abstract:The present article is a review of the recent progress and major trends in the field of thin-film transistor (TFT) research involving the use of amorphous oxide semiconductors (AOS). First, an overview is provided on how electrical performance may be enhanced by the adoption of specific device structures and process schemes, the combination of various oxide semiconductor materials, and the appropriate selection of gate dielectrics and electrode metals in contact with the semiconductor. As metal oxide TFT devices are excellent candidates for switching or driving transistors in next generation active matrix liquid crystal displays (AMLCD) or active matrix organic light emitting diode (AMOLED) displays, the major parameters of interest in the electrical characteristics involve the field effect mobility (μFE), threshold voltage (Vth), and subthreshold swing (SS). A study of the stability of amorphous oxide TFT devices is presented next. Switching or driving transistors in AMLCD or AMOLED displays inevitably involves voltage bias or constant current stress upon prolonged operation, and in this regard many research groups have examined and proposed device degradation mechanisms under various stress conditions. The most recent studies involve stress experiments in the presence of visible light irradiating the semiconductor, and different degradation mechanisms have been proposed with respect to photon radiation. The last part of this review consists of a description of methods other than conventional vacuum deposition techniques regarding the formation of oxide semiconductor films, along with some potential application fields including flexible displays and information storage.

materials science, multidisciplinary,physics, applied, condensed matter, coatings & films
Transflective LCD

GENG Wei-dong,HUANG Qian,LIU Hui-gang

DOI: https://doi.org/10.3969/j.issn.1007-2780.2007.04.001

2007-01-01

Chinese Journal of Liquid Crystals and Displays

Abstract:The transflective LCD is one of the more active research directions within FPD because it has advantages of both reflective and transmissive LCD, in lower power consumption and large dynamic range ambient light conditions. In this paper some representative transflective LCD technology presented were introduced including openings-on-metal transflector, dual-cell-gap transflective ECB LCD, the transflective LCD with IER, single-cell-gap transflective LCD driving by DGM, transflective mixed-mode LCD and color-sequential transflective LCD. Now, transflective LCD has some problems, such as color balance, image brightness, viewing angle and manufacturing cost, waiting to be solved.
Oxide-Semiconductor-Based TFTs for Displays and Flexible Electronics

Chang-Yu Lin,Chih-Wei Chien,Cheng-Han Wu,Hsing-Hung Hsieh,Chung-Chih Wu,Yung-Hui Yeh,Chun-Cheng Cheng,Chih-Ming Lai,Ming-Jiue Yu,Chyi-Ming Leu,Tzong-Ming Lee

DOI: https://doi.org/10.1149/05006.0293ecst

2013-03-15

ECS Transactions

Abstract:We report successful implementation of top-gate staggered a-IGZO TFTs with decent performance and environmental stability by adopting the SiOx/SiNx bi-layer gate-insulator stack. We successfully integrated the top-gate staggered a-IGZO TFTs into a working 2.2-inch AMOLED display panel, demonstrating the real use of the developed TFTs. We had also successfully implemented flexible top-gate staggered a-IGZO TFTs on colorless and transparent polyimide-based nanocomposite substrates using fully lithographic and etching processes that are compatible with existing TFT mass fabrication technologies. The TFTs showed decent performances (with mobility>10 cm2/V⋅s) either as fabricated or as de-bonded from the carrier glass. By bending the devices to different radii of curvature, influences of mechanical strains on characteristics of the flexible a-IGZO TFTs were also investigated.
Indium–gallium–zinc–oxide thin-film transistors: Materials, devices, and applications

Ying Zhu,Yongli He,Shanshan Jiang,Li Zhu,Chunsheng Chen,Qing Wan

DOI: https://doi.org/10.1088/1674-4926/42/3/031101

2021-03-01

Journal of Semiconductors

Abstract:Abstract Since the invention of amorphous indium–gallium–zinc–oxide (IGZO) based thin-film transistors (TFTs) by Hideo Hosono in 2004, investigations on the topic of IGZO TFTs have been rapidly expanded thanks to their high electrical performance, large-area uniformity, and low processing temperature. This article reviews the recent progress and major trends in the field of IGZO-based TFTs. After a brief introduction of the history of IGZO and the main advantages of IGZO-based TFTs, an overview of IGZO materials and IGZO-based TFTs is given. In this part, IGZO material electron travelling orbitals and deposition methods are introduced, and the specific device structures and electrical performance are also presented. Afterwards, the recent advances of IGZO-based TFT applications are summarized, including flat panel display drivers, novel sensors, and emerging neuromorphic systems. In particular, the realization of flexible electronic systems is discussed. The last part of this review consists of the conclusions and gives an outlook over the field with a prediction for the future.

physics, condensed matter

TFT Technology: Advancements and Opportunities for Improvement

Prospects of oxide TFTs approaching LTPS

Strategies for Applications of Oxide-Based Thin Film Transistors

1.1: Invited Paper: TFT Backplane for Display

Flexible Thin-Film Transistor and Integration Strategies for Future Intelligent Displays

TFT Channel Materials for Display Applications: From Amorphous Silicon to Transition Metal Dichalcogenides

Innovations in thin‐film electronics for the new generation of displays

48‐4: LTPO Technology Development for Enhanced Display Performance: Image Sticking Phenomena, Circuit Operation and Backplane Process Integration

The status and perspectives of metal oxide thin-film transistors for active matrix flexible displays

Flexible a-IGZO TFT Technology: New Developments & Applications

Reliability issues of amorphous oxide semiconductor-based thin film transistors

Thin Film Transistor Array Based Active Matrix Flat Panel Displays—Past and Next Application in Immersive Displays

Overview of electroceramic materials for oxide semiconductor thin film transistors

Printable Semiconductors for Backplane TFTs of Flexible OLED Displays

36.1: Invited Paper: Innovations in Thin Film Electronics for the New Generation of Displays

Research Progress of p-Type Oxide Thin-Film Transistors

Review of recent developments in amorphous oxide semiconductor thin-film transistor devices

Transflective LCD

Oxide-Semiconductor-Based TFTs for Displays and Flexible Electronics

Indium–gallium–zinc–oxide thin-film transistors: Materials, devices, and applications