Role of WO3 nanoparticles in electrical and dielectric properties of BaTiO3–SrTiO3 ceramics

Y. Slimani,B. Unal,M. A. Almessiere,E. Hannachi,Ghulam Yasin,A. Baykal,I. Ercan
DOI: https://doi.org/10.1007/s10854-020-03317-7
2020-04-02
Abstract:(BaTiO<sub>3</sub>–SrTiO<sub>3</sub>)/(WO<sub>3</sub>)<sub><i>x</i></sub> ceramics with <i>x</i> = 0 up to 5% were synthesized using solid-state reaction via high-energy ballf milling technique. Various characterization techniques were used including X-ray powder diffraction (XRD), scanning electron microscope (SEM), Fourier transform-infrared spectroscopy (FT-IR), and UV–visible diffuse reflectance (DR) spectrophotometer. Structural analysis via XRD indicates the formation of two separate phases of SrTiO<sub>3</sub> (STO) and BaTiO<sub>3</sub> (BTO) having both cubic structures. The presence of BaWO<sub>4</sub> as impurity was detected for higher concentration. SEM observations show a reduction in the average grains size with increasing WO<sub>3</sub> addition. In comparison with free-added ceramic, the optical band gap energy (<i>E</i><sub>g</sub>) shows a slight increase with WO<sub>3</sub> addition. Contextual investigations on the electrical and dielectric properties of various WO<sub>3</sub> added to BTO–STO ceramics have been used to evaluate conductivity (<span class="mathjax-tex">\(\sigma\)</span>), dielectric constant and loss (<span class="mathjax-tex">\(\varepsilon^{\prime}_{r}\)</span> and <span class="mathjax-tex">\(\varepsilon^{\prime\prime}_{r}\)</span>), and dissipation factor (<span class="mathjax-tex">\(\mathrm{t}\mathrm{a}\mathrm{n}\delta\)</span>) against both frequency and dc bias voltages. Generally, both <span class="mathjax-tex">\(\sigma\)</span> and <span class="mathjax-tex">\(\varepsilon^{\prime\prime}_{r}\)</span> correspond to the tendency of the power law to frequency. However, dc bias has been noticed to be lesser affecting the conduction mechanisms, which has a small variation for various WO<sub>3</sub> addition ratios. In addition, the dissipation factor was found to be highly dependent on both the addition ratio and the frequency as well as dc bias applied.
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