Abstract:There is an urgent need in surface mount technology (SMT) for a nontoxic, reusable and low temperature bonding technique which can afford good mechanical support as well as electrical contact. Meanwhile in the nanotechnology, many excellent and unique structure-related properties such as the high mechanical strength, the high conductivity and the adhesion ability of gecko feet have been studied. Our lab proposes a new patterned structure of Au nanowire array named nanowire surface fastener (NSF), which cold bonding for surface mount technology can be realized at room temperature. Then various methods have been developed to fabricate nanowire, such as arc discharge, catalytic CVD growth and template synthesis, and so on. Among these methods, the template method has been widely used for preparing one-dimensional nanostructures such as metals, semiconductors, polymers, and other materials by electrochemical, electroless deposition or sol-gel technique. Especially anodic aluminum oxide template assisted way has attached considerable attention due to its unique structure properties, such as controllable pore diameter, extremely narrow pore size distribution with high densities, high aspect ratios, and ideally cylindrical pore shape. The well arranged porous anodic aluminum oxide membrane is fabricated from aluminum film by two steps zM oxalic acid electrolytes. The anodic aluminum oxide membrane was investigated for features such as pore size, interpore distance, and thickness by 40 V. It is important for fabrication of porous anodic aluminum oxide template to find out elimination of the barrier layer of oxide and the pore extending rate by 0.5 M phosphoric acid. Morphologies of surface of aluminum film between anodization process and the anodic aluminum oxide barrier layer was researched by using atomic force microscope and scanning electron microscope. Results showed that the anodic aluminum oxide having the same diameter of the pore and the well arranged pore array without branching channel was obtained. The diameter of the pore before the pore extending treatment is 42 nm and the diameter of the pore after the pore extending treatment for 30 minutes is 86 nm. It was found that the diameter of the pore increased per 15 nm by the pore extending treatment for 10 minutes. We fabricated the through-hole anodic aluminum oxide template and made Cu nanowire by the template of our own making. By using Cu nanowire, we try to produce nanowire surface fastener and evaluate its properties.

Vertical Interconnections by Electroless Au Deposition on Electroless Ni Immersion Au Surface Finish

Vertical Interconnections by Electroless Pd Atoms on Immersion Au Surface for Heterogeneous Integration

Low Temperature Fine-pitch Cu-Cu Bonding Using Au Nanoparticles As Intermediate

Low-Temperature Ultrasonic Bonding of Cu/Sn Microbumps with Au Layer for High Density Interconnection Applications

Low Temperature Fine-Pitch Wafer-Level Cu-Cu Bonding Using Nanoparticles Fabricated by PVD

A Cu Pillar Bump Bonding Method Using Au-Sn Alloy Cap as the Interconnection Layer

Impact of Hydrogen Voiding in Chip-to-Chip Electroless All-Copper Interconnections

Fabrication of Anodic Aluminum Oxide Template and Cu Nanowire Surface Fastener

Enhanced Reactivity of Electroless Cu Interconnection by Surface Oxidation Pretreatment

Electroless Deposition of 4 μm High Ni/Au Bumps for 8 μm Pitch Interconnection

High-Temperature Stable Au–Sn and Cu–Sn Interconnects for 3D Stacked Applications

A High Copper Concentration Copper-Quadrol Complex Electroless Solution for Chip Bonding Applications

Low Temperature Fine Pitch Au-In Solid Liquid Inter Diffusion Bonding for Wafer Level Packaging

Sub-Micron Electrical Interconnection Enabled Ultra-High I/O Density Wafer Level SiP Integration

Parallel Gap Resistance Thick Wire Bonding for Vertical Interconnection in 3d Assembly

A Modified Interposer Fabrication Process by Copper Nano-Pillars Filled in Anodic Aluminum Oxide Film for 3D Electronic Package

Nano Features of Al/Au Ultrasonic Bond Interface Observed by High Resolution Transmission Electron Microscopy

Electrical interconnect in MEMS/NEMS devices by Au/a-Si eutectic reaction

Interconnection of Cu wire/Au plating pads using parallel gap resistance microwelding process

Low-Temperature Cu-Cu Bonding Using Silver Nanoparticles Fabricated by Physical Vapor Deposition

Low Contact Resistance Copper-Copper Bonding with Selective Electroless Plating Cobalt Interlayer