Abstract:Electrode replacement processing is introduced as a route to produce ferroelectric and antiferroelectric hafnium zirconium oxide thin films with asymmetric electrode layers and customizable internal biases. The effects of this process on the coercive fields and polarization properties of the ferroelectric and field‐induced ferroelectric layers are investigated, facilitating their incorporation into next‐generation memory and computing structures. Non‐volatile memory device structures such as ferroelectric random‐access memory and ferroelectric tunnel junctions employ switchable spontaneous polarization to hold binary states. These devices can potentially benefit from the imposition of spontaneous internal biases and their resulting effect on the polarization properties of the ferroelectric (or field‐induced ferroelectric/antiferroelectric) layer. While HfO2‐based thin films are ideal candidates for implementation into these devices due to their scalability and silicon compatibility, the phase purity of these oxides is sensitive to the selection of electrode material, preventing incorporation of asymmetric electrode layers into such structures. Within this work, electrode replacement following post‐metallization anneal processing is introduced as a route to achieve ferroelectric and field‐induced ferroelectric HfxZr1−xO2 (HZO) thin films with electrode‐independent phase constitutions. The effects of this process and the corresponding internal biases imposed across the HZO layers due to asymmetric work functions are investigated. It is shown that internal biases vary in magnitude in accordance with prediction based on the work functions of the replaced electrode layers and affect remanent polarization magnitudes. Accordingly, electrode replacement presents a processing route that can readily produce HZO films with spontaneous internal biases and electrode‐independent phase constitutions, facilitating implementation of these ferroelectrics into the next generation device structures.

Built‐in bias fields for retention stabilisation in hafnia‐based ferroelectric tunnel junctions

Direct Correlation of Ferroelectric Properties and Memory Characteristics in Ferroelectric Tunnel Junctions

Complex Internal Bias Fields in Ferroelectric Hafnium Oxide

Hafnium-Based Ferroelectric Memory Device with Integrated Selective Function Using Crested Band Structure

Optimizing Ferroelectric and Interface Layers in HZO-Based FTJs for Neuromorphic Applications

Hafnia-based Double Layer Ferroelectric Tunnel Junctions as Artificial Synapses for Neuromorphic Computing

Asymmetric Electrode Work Function Customization via Top Electrode Replacement in Ferroelectric and Field‐Induced Ferroelectric Hafnium Zirconium Oxide Thin Films

High-performance ferroelectric memory based on fully patterned tunnel junctions

Ferroelectric-field-effect-enhanced Electroresistance in Metal/ferroelectric/semiconductor Tunnel Junctions

Nonvolatile memory cells from hafnium zirconium oxide ferroelectric tunnel junctions using Nb and NbN electrodes

In-Plane Ferroelectric Domain Wall Memory with Embedded Electrodes on LiNbO3 Thin Films.

Stabilizing the Ferroelectric Phase in HfAlO Ferroelectric Tunnel Junction with Different Bottom Electrodes

Structure evolution path of ferroelectric hafnium zirconium oxide nanocrystals under in-situ biasing

Ferroelectric Tunneling Junctions Based on Aluminum Oxide/ Zirconium-Doped Hafnium Oxide for Neuromorphic Computing

Enhanced Electro‐Resistance and Tunable Asymmetric Depolarization Behavior in Hf0.5Zr0.5O2 Ferroelectric Tunnel Junction by Bottom Oxide Interfacial Layer

The Role of Ferroelectric Polarization in Resistive Memory Properties of Metal/Insulator/Semiconductor Tunnel Junctions: A Comparative Study.

A computational study of hafnia-based ferroelectric memories: from ab initio via physical modeling to circuit models of ferroelectric device

Neuromorphic synaptic applications of HfAlOx-based ferroelectric tunnel junction annealed at high temperatures to achieve high polarization

Electric field and temperature scaling of polarization reversal in silicon doped hafnium oxide ferroelectric thin films

The Doping Effect on the Intrinsic Ferroelectricity in Hafnium Oxide-Based Nano-Ferroelectric Devices

Ferroelectrically-enhanced Schottky barrier transistors for Logic-in-Memory applications