Crystal Growth by Chemical Vapor Transport: Process Screening by Complementary Modeling and Experiment

Robert Heinemann,Peer Schmidt

DOI: https://doi.org/10.1021/acs.cgd.0c00679

2020-07-09

Abstract:Despite chemical vapor transport (CVT) being a widely used method for crystal growth of inorganic substances, detailed mechanistic studies on the course of the crystallization process are rather few. In this study, an elaborated experimental screening run combined with sophisticated modeling of the respective heterogeneous equilibria is presented: Crystal growth of germanium by vapor transport with the addition of iodine has been chosen as a model system for validation of the applied method spectrum. In order to record the course and the interplay of heterogeneous equilibrium and nonequilibrium reactions in the system Ge–I, the experimental setup of high-temperature gas-balance (HTGB) is applied. Additionally, the observed evaporation processes are compared with saturation curves of corresponding volatile substances and, thus, can be assigned to individual species within the system. In this experimental screening, a phase sequence means to examine how the condensed phases undergo iodine depletion and how the gaseous phase undergoes a germanium enrichment when the temperature is increased. This phase screening combined with annealing experiments in the course of the phase sequence helps to analyze stepwise nonequilibrium products and to identify the characteristic species. Subsequently, for the evaluation of the composition of the gaseous phase, and for the deduction of the vapor transport mechanism, thermodynamic modeling by the CalPhaD method is performed. For the reference system, it is confirmed that iodine does not act as the transport agent. Instead, GeI₄ is responsible for the volatilization of germanium, forming GeI₂. Nevertheless, investigations clearly illustrate how GeI₄ forms naturally in the phase sequence in the system Ge–I, which makes direct addition of it unnecessary. The recommended temperature range for vapor transport of germanium spans from 460 to 800 °C. Modeling shows that migration rates for germanium reaches a maximum at a mean temperature between 540 and 550 °C. Finally, vapor transport experiments were performed from 565 to 515 °C and from 690 to 590 °C. By increasing the deposition temperature, a slight decrease of the migration rate was observed, though a positive impact on the crystal's morphology was also found.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acs.cgd.0c00679?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acs.cgd.0c00679</a>.Collection of thermodynamic data used for modeling, complete temperature programs for vapor transport experiments (<a class="ext-link" href="/doi/suppl/10.1021/acs.cgd.0c00679/suppl_file/cg0c00679_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

chemistry, multidisciplinary,materials science,crystallography