Abstract:Thin film transistors based on a‐IGZO/a‐ITZO/a‐IGZO heterostructural channel are fabricated. The TFTs exhibited outstanding electrical performances, with field effect mobility exceeding 50 cm2V‐1s‐1, ideally small positive/negative‐bias‐stress voltage shifts down to 0.1/0.004 V, and optimized sub‐threshold swing as low as 80 mV dec−1. Improvements in the quality of transport interface verified by magnetotransport and Hall effect account for enhanced transport performances and device reliabilities. Thin film transistors (TFTs) based on amorphous oxide semiconductors (AOS) are promising candidates for panel displays. However, the trade‐off between mobility and reliability in AOS‐TFTs hinders their further applications in next‐generation display techniques and newly developed logic and memory circuits. Here, a structural strategy is proposed for the mobility‐reliability trade‐off, via a triple‐layer channel containing a Ga‐free high‐mobility layer (amorphous InSnZnO, a‐ITZO) sandwiched by two Ga‐rich layers (amorphous InGaZnO, a‐IGZO) with higher reliability. Gate‐induced carrier accumulation is verified mainly being energetically confined within the high mobility a‐ITZO layer, at the newly defined a‐ITZO/a‐IGZO interface. Compared to single layer a‐ITZO‐TFTs, triple‐channel a‐IGZO/a‐ITZO/a‐IGZO TFTs (GTG‐TFTs) exhibit outstanding stability and electrical transport performances, with suppressed positive/negative‐bias‐stress voltage shifts from 1/0.3 to 0.1/0.004 V, enhanced field effect mobility from ≈40 to 56 cm2V−1s−1, and optimized sub‐threshold swing down to 80 mV dec−1. Further numerical simulations and charge transport characterizations, including magnetotransport and gate‐induced Hall effect, indicate that charge transport in tri‐layer structure is less affected by energetic disorders present at gate insulator interfaces.

Transmission Line Method Analysis on the Electrical Properties of Bi-Layer Channel Oxide Thin Film Transistors with Oxide-Metal-Oxide Electrodes

Enhancement in electrical properties of dual-active-layer amorphous SiZnSnO/SiInZnO thin film transistors

Bi-layer channel structure-based oxide thin-film transistors consisting of ZnO and Al-doped ZnO with different Al compositions and stacking sequences

Addressing the Conflict between Mobility and Stability in Oxide Thin‐film Transistors

High-performance bilayer metal-oxide thin film transistors using ultra-thin solution-processed ZrOx dielectric

Enhanced Electrical Properties of Dual-Layer Channel ZnO Thin Film Transistors Prepared by Atomic Layer Deposition

Viable Approach of Tuning Oxide Semiconductor Thin Films in Solution‐Processed Heterojunction Thin Films Transistors for Both Higher Performances and Stability

High-Performance Fully Amorphous Bilayer Metal-Oxide Thin Film Transistors Using Ultra-Thin Solution-Processed Zrox Dielectric

Tri‐Layer Heterostructure Channel of a‐IGZO/a‐ITZO/a‐IGZO Toward Enhancement of Transport and Reliability in Amorphous Oxide Semiconductor Thin Film Transistors

Work function effect of metal electrodes on the performance of amorphous Si–Zn–Sn–O thin-film transistors investigated by transmission line method

Island‐Like AZO/Al2O3 Bilayer Channel Structure for Thin Film Transistors

Design of different oxygen content and high performance bilayer In 2 O 3 thin-film transistors at room temperature for flexible electronics

Impact of Layer Configuration and Doping on Electron Transport and Bias Stability in Heterojunction and Superlattice Metal Oxide Transistors

Channel thickness effect on the performance of amorphous SiZnSnO semiconductor thin-film transistor with metal capping structure

Influence of the Channel Layer Thickness on Electrical Properties of Indium Zinc Oxide Thin-Film Transistor

Amorphous Oxide Thin Film Transistors with Nitrogen-Doped Hetero-Structure Channel Layers

Enhancement of electrical properties of solution-processed oxide thin film transistors using ZrO<sub>2</sub> gate dielectrics deposited by an oxygen-doped solution

Effects of channel structure consisting of ZnO/Al2O3 multilayers on thin-film transistors fabricated by atomic layer deposition

Effect of Source/drain Preparation on the Performance of Oxide Thin-Film Transistors

Performance Improvement of Amorphous Thin-Film Transistors with Solution-Processed InZnO/InMgZnO Bilayer Channels

Improving Performance of Tin-Doped-Zinc-Oxide Thin-Film Transistors by Optimizing Channel Structure