Improved dielectric properties of CaCu3−xSnxTi4O12 ceramics with high permittivity and reduced loss tangent

Jakkree Boonlakhorn,Narong Chanlek,Pornjuk Srepusharawoot,Prasit Thongbai

DOI: https://doi.org/10.1007/s10854-020-04123-x

2020-08-04

Abstract:The structural and electrical parameters of sintered CaCu_3−<i>x</i>Sn_<i>x</i>Ti₄O₁₂ ceramics (<i>x</i> = 0, 0.05, and 0.10) were systematically investigated. Single-phase CaCu₃Ti₄O₁₂ was detected in all-ceramic samples. The grain size in the CaCu_3−<i>x</i>Sn_<i>x</i>Ti₄O₁₂ ceramics decreased as <i>x</i> increased. A high dielectric permittivity of ~ 6736–19,992 and a reduced loss tangent of ~ 0.028–0.033 was obtained in the ceramics with <i>x</i> = 0.05 and 0.10. In addition, the temperature stability of the dielectric permittivity and loss tangent also improved by doping with Sn ions. The dielectric response of the CaCu_3−<i>x</i>Sn_<i>x</i>Ti₄O₁₂ ceramics was closely associated with an internal barrier layer capacitor model. X-ray photoelectron spectroscopy indicated the existence of mixed Cu⁺/Cu²⁺ and Ti³⁺/Ti⁴⁺ in all ceramic samples, which promoted the hopping of electrons between Cu⁺ ↔ Cu²⁺ and Ti³⁺ ↔ Ti⁴⁺ and was the possible origin of semiconducting grains in the samples. The presence of Sn²⁺ was detected by X-ray photoelectron spectroscopy indicated a reduction in the oxidation state of the Sn ions due to the charge compensation that occurred for the replacement of Cu host sites.