High Dielectric Permittivity Behavior in Cu-Doped Catio3

Bo Cheng,Yuan-Hua Lin,Hao Yang,Jinle Lan,Ce-Wen Nan,Xi Xiao,Jinliang He
DOI: https://doi.org/10.1111/j.1551-2916.2009.03254.x
IF: 4.186
2009-01-01
Journal of the American Ceramic Society
Abstract:Cu‐doped CaTiO3‐based polycrystalline ceramics have been prepared by the conventional solid‐state sintering. Our results indicate that the dielectric constant can be enhanced greatly by increasing the Cu‐doped content, which show weak frequency and temperature dependence. The fitted activation energy is almost same (∼0.10 eV) as the Cu‐doped content is 0.4–0.6, which may be ascribed to the first ionization of the oxygen vacancies. The origin of the high dielectric permittivity observed in these Ca1−xCuxTiO3‐based ceramics should be attributed to the interfacial polarization mechanism, and can be well described by the percolation theory with fc≈0.27 and s≈0.74.
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