Abstract:Two-dimensional semiconductors are structurally ideal channel materials for the ultimate atomic electronics after silicon era. A long-standing puzzle is the low carrier mobility ({\mu}) in them as compared with corresponding bulk structures, which constitutes the main hurdle for realizing high-performance devices. To address this issue, we perform combined experimental and theoretical study on atomically thin MoS2 field effect transistors with varying the number of MoS2 layers (NLs). Experimentally, an intimate relation is observed with a 10-fold degradation in {\mu} for extremely thinned monolayer channels. To accurately describe the carrier scattering process and shed light on the origin of the thinning-induced mobility degradation, a generalized Coulomb scattering model is developed with strictly considering device configurative conditions, i.e., asymmetric dielectric environments and lopsided carrier distribution. We reveal that the carrier scattering from interfacial Coulomb impurities (e.g., chemical residues, gaseous adsorbates and surface dangling bonds) is greatly intensified in extremely thinned channels, resulting from shortened interaction distance between impurities and carriers. Such a pronounced factor may surpass lattice phonons and serve as dominant scatterers. This understanding offers new insight into the thickness induced scattering intensity, highlights the critical role of surface quality in electrical transport and would lead to rational performance improvement strategies for future atomic electronics.

The effect of thickness on the optoelectronic properties of organic field-effect transistors: towards molecular crystals at monolayer limit

Monolayer Molecular Crystal Field-effect Transistors: Advances and Perspectives

Two-dimensional quasi-freestanding molecular crystals for high-performance organic field-effect transistors

A Dry-Transfer Method for Molecular Monolayer Crystals Toward Flexible High-Performance Organic Field-Effect Transistors

Solution‐Processed 2D Molecular Crystals: Fabrication Techniques, Transistor Applications, and Physics

Monolayer atomic crystal molecular superlattices

Spin-Coated Crystalline Molecular Monolayers for Performance Enhancement in Organic Field-Effect Transistors

Organic crystalline monolayers for ideal behaviours in organic field-effect transistors

Enhanced Photoelectrical Response of Thermodynamically Epitaxial Organic Crystals at the Two-Dimensional Limit

Low-voltage, High-performance Organic Field-Effect Transistors Based on 2D Crystalline Molecular Semiconductors

Interfacial Flat-Lying Molecular Monolayers for Performance Enhancement in Organic Field-Effect Transistors

Millimeter-Sized Two-Dimensional Molecular Crystalline Semiconductors with Precisely Defined Molecular Layers via Interfacial-Interaction-Modulated Self-Assembly.

Realization of Ohmic-contact and velocity saturation in organic field-effect transistors by crystallized monolayer

Semiconductor/dielectric Interface in Organic Field-Effect Transistors: Charge Transport, Interfacial Effects, and Perspectives with 2D Molecular Crystals

Capillary‐Confinement Crystallization for Monolayer Molecular Crystal Arrays

Controlling the crystal formation in solution-process for organic field-effect transistors with high-performance

Realizing low-voltage operating crystalline monolayer organic field-effect transistors with a low contact resistance

Progress on the Optoelectronic Functional Organic Crystals

Thickness-Dependent Interfacial Coulomb Scattering in Atomically Thin Field-Effect Transistors

Directly writing 2D organic semiconducting crystals for high-performance field-effect transistors

Molecular Layer-defined Transition of Carrier Distribution and Correlation with Transport in Organic Crystalline Semiconductors.