Abstract:Single event effects (SEE) induced by high energy particles can cause loss of storage data,disorder of program,and even functional error of electronic systems.Modeling and simulation of SEE has attracted much attention in recent years.Circuit-level simulation is to directly introduce radiation effects terms into the common compact model.To reach higher accuracy and more comprehensive analysis of physical mecha-nisms,the dependence of single event transients on strike locations was studied and ana-lytically modeled.The principle and approach flow of the proposed circuit-level SEE simulation were presented.Firstly,basic drift and diffusion collections were considered.Secondly,bias-dependent model could be produced.Then the well potential modulation and the bipolar amplification effects were modeled.Circuit-level simulation results agree well with experiment results.Based on the performed work,transient radiation effects evaluation software (TREES) was developed.The input file should be GDSII layout,which will be parsed and all active region information will be extracted.Other user-defined options include heavy ion setup (LET values),region selection,and stimulus setup,etc.The outputs include waveforms corresponding to each strike,SEE sensitive region mapping,SEE cross section values,etc.The first edition has been integrated into commercial design flow,which can be used as a plug-in software into Cadence tool-bar.The second edition is a stand-alone version with no demand for upstream or down-stream commercial software.This work is useful to produce precise SEE response pre-dictions for circuit blocks or medium-size circuits.TREES software can generate SEE sensitive region much faster than time-consuming device-level simulation.For designers who are familiar with circuit-level simulation,this approach is useful for checking the hardness performance of integrated circuits at design phase.

Modeling of single-event effects in circuit-hardened high-speed SiGe HBT logic

Single-event response of the SiGe HBT in TCAD simulations and laser microbeam experiment*

Three-Dimensional Simulation of Fabrication Process-Dependent Effects on Single Event Effects of Sige Heterojunction Bipolar Transistor

Simulation Study of Single Event Effects in the SiC LDMOS with a Step Compound Drift Region

Circuit-level Modeling and Simulation of Single Event Effects in CMOS Electronics

Research on SEE Mitigation Techniques Using Back Junction and P + Buffer Layer in Domestic Non-Dti SiGe HBTs by TCAD

Mitigation of Single-Event Effects in SiGe-HBT Current-Mode Logic Circuits

A Compact Circuit-Level Model for Single-Event Burnout in SiC Power MOSFET Devices

3-D Simulation Study of Single Event Effects of SiGe Heterojunction Bipolar Transistor in Extreme Environment

Simulation and Analysis of Inverse-Mode Operation of Single Event Transient Mechanisms on NPN-SiGe HBT

Sensitivity study of the SiGe heterojunction bipolar transistor single event effect based on pulsed laser and technology computer-aided design simulation

Research on single event effects and hardening design of LDMOS transistors

Simulation studies of Single Event Effects in Ga$_2$O$_3$ MOSFETs

Modeling Gate Leakage Current for p-GaN Gate HEMTs With Engineered Doping Profile

LET-dependent model of single-event effects in MOSFETs

Characterization and Modeling of SET Generation Effects in CMOS Standard Logic Cells

Synergistic effect of total ionizing dose on single event effect induced by pulsed laser microbeam on SiGe heterojunction bipolar transistor

Three-Dimensional Simulation Study of Bias Effect on Single Event Effects of Sige Heterojunction Bipolar Transistor

Efficient Modeling of Single Event Transient Effect with Limited Peak Current: Implications for Logic Circuits

Primary Single Event Effect Studies on Xilinx 28-Nm System-on-Chip (Soc)

Effects of Collector Profile on the SET Response of 130-nm High-Speed and High-Breakdown SiGe HBTs