Abstract:The magnetization of alloyed Ohmic contact film structures of the form AuGe/Ni/Au deposited on a GaAs/AlGaAs heterostructure substrate are reported as functions of Ni-layer thickness and alloying temperature. The observations are correlated with contact resistance and surface morphology studies. It is found that drops in magnetization, due to conversion of Ni to a non-magnetic phase or alloy, begin at anneal temperatures as low as 100 °C for all Ni-layer thicknesses. The conversion is completed at an anneal temperature, TA, that increases with Ni-layer thickness. TA varies from 100–200 °C to 400–430 °C as Ni-layer thickness is varied from 10 to 100 nm for an AuGe (88 : 12 wt%) layer thickness of 100 nm. The electrical contact formation, however, appears to begin at much higher temperatures than 100 °C. Lowest contact resistance (0.05 ± 0.01 Ω mm) is obtained when Ni thickness is about 25 nm for 100 nm AuGe layer thickness, anneal temperature is 400 °C and anneal duration is 60 s. This contact is non-magnetic. Measurements on samples with other AuGe layer thicknesses suggest that the contact resistances are comparable to this optimum value, if the ratio of AuGe layer thickness to that of Ni is ≥4. Increasing the Ni-layer thickness reduces the roughness of annealed contacts, but also increases contact resistance. The magnetic measurements are suggestive of a transformed Ni-layer thickness proportional to the thickness of the underlying AuGe layer. It is proposed that Ni diffuses into AuGe in a concentration limited diffusive mechanism followed by segregation into Ni3Ge.

Characterization of alloyed AuGe/Ni/Au ohmic contacts to n-doped GaAs by measurement of transfer length and under the contact sheet resistance

Electrical Characteristics of Ti/Al/Ti/Au Multilayer Ohmic Contacts to N-Type GaN

Investigation of the low contact resistance via alloying of Au/Ni/AuGe-GaAs contact structures

Temperature Dependence of the Specific Resistance in Ti/Al/Ni/Au Ohmic Contacts on (nh4)2sx Treated N-Type GaN

Very low resistance Au/Ge/Ni/Ag based Ohmic contact formation to Al0.25/Ga0.75As/GaAs and Al0.48In0.52As/Ga0.47In0.53As heterostructures: A behavioral comparison

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Current-Voltage Characteristic of Alloyed Ni/Au on p-GaN

Shallow Ohmic Contacts to N-Type GaAs and AlxGa1−xAs

Dependence of melting, roughness and contact resistances on Ge and Ni content in alloyed AuGe/Ni/Au-type electrical contacts to GaAs/AlGaAs multilayer structures

Influence of Nickel layer thickness on the magnetic properties and contact resistance of AuGe/Ni/Au Ohmic contacts to GaAs/AlGaAs heterostructures

Optimization of submicron Ni/Au/Ge contacts to an AlGaAs/GaAs two-dimensional electron gas

Au/Ni/Au as a contact for p-Type GaAs

Performance Comparison of Pt/Au and Ni/Au Schottky Contacts on Alxga1-X N/Gan Heterostructures at High Temperatures

Study of Ti/Au, Ti/Al/Au, and Ti/Al/Ni/Au ohmic contacts to n -GaN

Ultra-Low Resistance Ohmic Contacts to Gan with High Si Doping Concentrations Grown by Molecular Beam Epitaxy

Temperature Dependent Characteristics of Ti/Al/Ni/Au Ohmic Contact on Lattice-Matched In0.17Al0.83N/GaN Heterostructures

Ti/Al/Pt/Au and Al Ohmic Contacts on Si-Substrated Gan

Research on P-Type GaN / Au Ohmic Contact

The annealing mechanism of AuGe/Ni/Au ohmic contacts to a two-dimensional electron gas in GaAs/AlGaAs heterostructures

Metal/n-AlGaN Ohmic Contact

Ohmic Contact and Interfacial Reaction of Ti/Al/Pt/Au Metallic Multi-Layers on N-Alxga1−xn/gan Heterostructures