Abstract:Silane process of granular polysilicon has become a promising method for the preparation of polysilicon due to its continuous low temperature, simple process and low energy consumption. However, granular silicon contains more hydrogen than conventional columnar silicon, which can result in the deterioration of single crystal furnace thermal field life and rod stability by the “hydrogen jump” in the process of Czochralski method. Hydrogen removal has become an important problem to be solved in the industry development. Thus, we propose a hydrogen separation model suitable for silicon system based on vacuum experiment and thermodynamic calculation, which can provide a theoretical basis for the research and development of silicon dehydrogenation method. The predicted removal rate of hydrogen at different temperatures and vacuum pressures is in good agreement with the experimental results, reflecting the reasonability of the model. The results show that the hydrogen removal rate increases with the increasing of temperature and the decreasing of pressure, where temperature plays a leading role in the removal of hydrogen in silicon. At less than one atmosphere, the increase in dehydrogenation rate by 1 °C ranges from 0.01% to 0.25% in the temperature range from 1450 to 1800°CAt temperatures below 1800°Cthe maximum dehydrogenation rate is less than 0.001% for each 1pa reduction in pressure from one atmospheric pressure to 1000pa. According to the model calculation results, a hydrogen removal method is designed by using the vacuum electromagnetic induction. The deep removal of trace hydrogen in silicon has been realized, hydrogen in silicon drops rapidly from around 20 ppm to less than 5 ppm.

Hydrogenation of polysilicon thin-film transistor in a planar inductive H/sub 2//Ar discharge

Short-Time Electron-Cyclotron Resonance Hydrogenation of Polycrystalline Silicon Thin-Film Transistor Structures

Hydrogenated amorphous silicon thin film transistor fabricated on plasma treated silicon nitride

Optimum Hydrogen Injection in Phosphorus-Doped Polysilicon Passivating Contacts

Effect of Ar in the Source Gas on the Microstructure and Optoelectronic Properties of Microcrystalline Silicon Films Deposited by Plasma-Enhanced CVD

The Effect of Hydrogen Species on the Electronic Properties of Nc-Si:H Prepared in A Triode Pecvd System

Very High Hydrogen Dilution Induced Novel Phenomena of Electronic Transport Properties in Hydrogenated Microcrystalline Silicon-Germanium Thin Films Prepared by Plasma Enhanced Chemical Vapor Deposition Method

The role of hydrogen in amorphous silicon films deposited by the pyrolytic decomposition of silane

Plasma Hydrogenation of Strain-Relaxed SiGe∕Si Heterostructure for Layer Transfer

The Effect of Relatively Low Hydrogen Dilution on the Properties of Carbon-Rich Hydrogenated Amorphous Silicon Carbide Films

High Rate Deposition of Stable Hydrogenated Amorphous Silicon in Transition from Amorphous to Microcrystalline Silicon

Effect of Silane/hydrogen Ratio on Microcrystalline Silicon Thin Films by Remote Inductively Coupled Plasma

On Conductivity Type Conversion of P-Type Silicon Exposed to a Low-Frequency Inductively Coupled Plasma of Ar + H2

The Change of Transport Mechanism in Μc-Si:H Films Induced by H2-diluted Silane Plasma

Dry Passivation Process for Silicon Heterojunction Solar Cells Using Hydrogen Plasma Treatment Followed by In Situ a-Si:H Deposition

Confined high-pressure chemical deposition of hydrogenated amorphous silicon

Modulation Effect of Plasma Power on Crystalline Volume Fraction of Silicon Films in the Phase Transition from A-Si:H to /spl Mu/c-Si:H

Enhancing removal of hydrogen from granular polysilicon by innovating vacuum separation model and method for SoG-Si

Deposition of a-Si:H thin films embedded with nano-crystalline through dilution of argon

Hydrogen concentration profiles in as‐deposited and annealed phosphorus‐doped silicon dioxide films

High-Rate Deposition of Hydrogenated Amorphous-Silicon Using Microwave Plasma Chemical Vapor-Deposition Process