High-voltage CdSe-Ge TFT driver circuits for passive AC-TFEL displays

J. De Vos,H. De Smet,A.M. De Cubber,A. Van Calster

DOI: https://doi.org/10.1109/4.743783

1999-01-01

Abstract:Since an electroluminescent display (ELD) is a capacitive display driven at high voltage, it is necessary to fabricate high-voltage, large-current drivers. It is shown that a 20-/spl mu/m complementary CdSe-Ge thin-film transistor technology can be used to integrate the high-voltage section of the drive circuits on the substrate of an ELD. The realized column driver levels a 15 V CMOS signal up to a modulation voltage of 50 V. A novel tristate row driver circuit, which is based on the symmetric character of the thin-film transistor, handles row selecting voltages of about 200 V together with current pulses of approximately 100 mA. In this paper, the design, simulation, and measurement of these circuits are described. Technology problems due to high voltages were solved.

engineering, electrical & electronic