Abstract:Silicon carbide (SiC) devices have the potential to yield new components with functional capabilities that far exceed components based on silicon devices. Selective doping of SiC by ion implantation is an important fabrication technology that must be completely understood if SiC devices are to achieve their potential. One major problem with ion implantation into SiC is the surface roughening that results from annealing SiC at the high temperatures which are needed to activate implanted acceptor ions, boron or aluminum. This paper examines the causes and possible solutions to surface roughening of implanted and annealed 4H-SiC. Samples consisting of n-type epilayers (5 × 1015 cm−3, 4 µm thick) on 4H-SiC substrates were implanted with B or Al to a total dose of 4 × 1014 cm−2 or 2 × 1015 cm−2, respectively. Roughness measurements were made using atomic force microscopy. From the variation of root mean square (rms) roughness with annealing temperature, apparent activation energies for roughening following implantation with Al and B were 1.1 and 2.2 eV, respectively, when annealed in argon. Time-dependent activation and surface morphology analyses show a sublinear dependence of implant activation on time; activation percentages after a 5 min anneal following boron implantation are about a factor of two less than after a 40 min anneal. The rms surface roughness remained relatively constant with time for anneals in argon at 1750°C. Roughness values at this temperature were approximately 8.0 nm. Annealing experiments performed in different ambients demonstrated the benefits of using silane to maintain good surface morphology. Roughnesses were 1.0 nm (rms) when boron or aluminum implants were annealed in silane at 1700°C, but were about 8 and 11 nm for B and Al, respectively, when annealed in argon at the same temperature.

On the nature of ion implantation induced dislocation loops in 4H-silicon carbide

Al-implantation induced damage in 4H-SiC

TEM Investigation on High Dose Al Implanted 4H-SiC Epitaxial Layer

Surface and Interface Properties of Ion Implanted 4H-Silicon Carbide

Optical Characterization of Ion-Implanted 4H-SiC

Hrtem Study of SiC Buried Layer Formed by C+implantation in Silicon

Evolution of secondary defects in arsenic implanted Si

Atomistic Analysis on Implantation Effects of Hydrogen Ions and Copper Ions into 4H-Sic

Depth profiling of the Si ion implantation induced disorder and strain in 4H-SiC and the thermal annealing recovery

Influence of a thin amorphous surface layer on de-channeling during aluminum implantation at different temperatures into 4H-SiC

Studies of the Origins of Half Loop Arrays and Interfacial Dislocations Observed in Homoepitaxial Layers of 4H-SiC

Lateral spreads of ion-implanted Al and P atoms in silicon carbide

Infrared Reflection Investigation of Ion‐implanted and Post‐implantation‐annealed Epitaxially Grown 6H‐sic

Optical Properties Revealing Annealing Behavior of High-Temperature He-Implantation Induced Defects in Silicon Carbide

Insights into the effects of Al-ion implantation temperature on material properties of 4H-SiC

Photoluminescence Study of Beryllium Implantation Induced Intrinsic Defects in 6H-Silicon Carbide

Dynamic reactions of defects in ion-implanted 4H-SiC upon high temperature annealing

Defects in Hydrogen Implanted SiC

Intrinsic color centers in 4H-silicon carbide formed by heavy ion implantation and annealing

Surface roughening in ion implanted 4H-silicon carbide

Precipitates and Voids in Cubic Silicon Carbide Implanted with 25 Mg + Ions