Abstract:Cubic boron arsenide (BAs) is a promising compound semiconductor for thermal management applications due to its high thermal conductivity, exceeding 1000 W m(-1) K-1 at room temperature in high-quality samples. However, the as-grown BAs crystals usually exhibit large variations in thermal and electronic transport properties. The origin of these large variations has thus far been inconclusive. Here, we investigate the effects of impurities on the thermal and electrical properties of BAs. Time-of-flight secondary ion mass spectrometry and electron probe microanalysis measurements reveal the presence of several impurities in BAs, including Si, C, O, H, Te, Na, and I. Some of these impurities, especially Si, C, and H, could serve as shallow acceptors, leading to the p-type conducting behavior commonly measured in BAs. The thermal conductivity and hole mobility are reduced more in the samples with higher impurity concentrations due to the enhanced impurity scattering of phonons and holes, respectively. Firstprinciples calculations are used to determine the thermal conductivity reduction induced by different impurities. The calculated results confirm the experimental trends. The substitution of O for As leads to a large bond distortion resulting from the breaking of the Td symmetry, which yields unusually strong phonon scattering with a correspondingly large reduction in thermal conductivity. Our results offer useful insights into the impurity-sensitive transport properties of BAs.

Electronic structure of cubic boron arsenide probed by scanning tunneling spectroscopy

Mechanical Properties of Boron Arsenide Single Crystal

Comparative Scanning Tunneling Microscopy Study on Hexaborides

One-particle and excitonic band structure in cubic Boron Arsenide

Boron arsenide heterostructures: lattice-matched heterointerfaces and strain effects on band alignments and mobility

Basic Physical Properties of Cubic Boron Arsenide

Band structure and carrier effective masses of boron arsenide: effects of quasiparticle and spin-orbit coupling corrections

Multimillimeter-sized cubic boron arsenide grown by chemical vapor transport via a tellurium tetraiodide transport agent

The electronic band structure and optical properties of boron arsenide

Optical Properties of Cubic Boron Arsenide

Electronic and valleytronic properties of crystalline boron-arsenide tuned by strain and disorder

Effects of Impurities on the Thermal and Electrical Transport Properties of Cubic Boron Arsenide

Thermal Expansion Coefficient and Lattice Anharmonicity of Cubic Boron Arsenide

Direct and indirect optical absorptions of cubic BAs and BSb

High ambipolar mobility in cubic boron arsenide revealed by transient reflectivity microscopy

Photoluminescence mapping and time-domain thermo-photoluminescence for rapid imaging and measurement of thermal conductivity of boron arsenide

Strain-tunable electronic structure, optical and thermoelectric properties of BAs

High-pressure Phases of Boron Arsenide with Potential High Thermal Conductivity

Effect of nucleation sites on the growth and quality of single-crystal boron arsenide

High thermal conductivity in cubic boron arsenide crystals

Cubic boron arsenide under pressure