One-particle and excitonic band structure in cubic Boron Arsenide

Swagata Acharya,Dimitar Pashov,Mikhail I Katsnelson,Mark van Schilfgaarde

DOI: https://doi.org/10.1002/pssr.202300156

2023-05-27

Abstract:Cubic BAs has received recent attention for its large electron and hole mobilities and large thermal conductivity. This is a rare and much desired combination in semiconductor industry: commercial semiconductors typically have high electron mobilities, or hole mobilities, or large thermal conductivities, but not all of them together. Here we report predictions from an advanced self-consistent many body perturbative theory and show that with respect to one-particle properties, BAs is strikingly similar to Si. There are some important differences, notably there is an unusually small variation in the valence band masses . With respect to two-particle properties, significant differences with Si appear. We report the excitonic spectrum for both q=0 and finite q, and show that while the direct gap in cubic BAs is about 4 eV, dark excitons can be observed down to about $\sim$1.5 eV, which may play a crucial role in application of BAs in optoelectronics.

Materials Science

What problem does this paper attempt to address?

The problems that this paper attempts to solve mainly focus on the electronic structure and optical properties of cubic boron arsenide (c - BAs). Specifically:

1. **Electronic band structure**: The paper explores the one - particle band structure of c - BAs, especially the effective masses of electrons and holes near the conduction band minimum and the valence band maximum. It is found that the properties of c - BAs in these aspects are very similar to those of silicon (Si), but there are some significant differences. For example, the change in the effective mass of the valence band in c - BAs is relatively small.

2. **Exciton band structure**: The paper also studies in detail the two - particle properties of c - BAs, that is, the exciton band structure. The authors report the exciton spectra of c - BAs at different wave vectors (q = 0 and finite q), and point out that although the direct band gap of c - BAs is about 4 eV, dark excitons can be observed in the energy range as low as about 1.5 eV. This finding is of great significance for the application of c - BAs in optoelectronics.

3. **Uncertainties in electronic and optical properties**: Although c - BAs has attracted attention because of its high electron and hole mobilities and high thermal conductivity, there are still some uncertainties in its electronic band gap, the anisotropy of the effective masses of electrons and holes, the dielectric constant, and the exciton properties. The paper makes predictions and explanations for these problems through the advanced self - consistent many - body perturbative theory to provide a more accurate description of the intrinsic properties.

In summary, the main objective of this paper is to clarify the uncertainties and controversies in the electronic and optical properties of c - BAs through theoretical calculations and analysis, and to provide theoretical support for its potential applications in semiconductor technology.